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Xiaoxiang Xi

Xiaoxiang Xi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-el

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Published work

15 published item(s)

preprint2022arXiv

Observation of anomalous amplitude modes in the kagome metal CsV$_3$Sb$_5$

The charge-density wave (CDW) phase is often accompanied by the condensation of a soft acoustic phonon mode, giving rise to lattice distortion and charge density modulation. This picture was challenged for the recently discovered kagome metal CsV$_3$Sb$_5$, based on the evidence of absence of soft phonons. Here we report the observation of Raman-active CDW amplitude modes in this material, which are collective excitations typically thought to emerge out of frozen soft phonons. The amplitude modes strongly hybridize with other superlattice modes, imparting them with clear temperature-dependent frequency shift and broadening, rarely seen in other known CDW materials. Both the mode mixing and the large amplitude mode frequencies suggest that the CDW exhibits the character of strong electron-phonon coupling, a regime in which acoustic phonon softening can cease to exist. The observation of amplitude modes in the absence of soft phonons highlights the unconventional nature of the CDW in CsV$_3$Sb$_5$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large Magnetoresistance in Topological Insulator Candidate TaSe3

Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Patterns and driving forces of dimensionality-dependent charge density waves in 2H-type transition metal dichalcogenides

Two-dimensional (2D) materials have become a fertile playground for the exploration and manipulation of novel collective electronic states. Recent experiments have unveiled a variety of robust 2D orders in highly-crystalline materials ranging from magnetism to ferroelectricity and from superconductivity to charge density wave (CDW) instability. The latter, in particular, appears in diverse patterns even within the same family of materials with isoelectronic species. Furthermore, how they evolve with dimensionality has so far remained elusive. Here we propose a general framework that provides a unfied picture of CDW ordering in the 2H polytype of four isoelectronic transition metal dichalcogenides 2H-MX$_2$ (M=Nb, Ta and X=S, Se). We first show experimentally that whilst NbSe$_2$ exhibits a strongly enhanced CDW order in the 2D limit, the opposite trend exists for TaSe$_2$ and TaS$_2$, with CDW being entirely absent in NbS$_2$ from its bulk to the monolayer. Such distinct behaviours are then demonstrated to be the result of a subtle, yet profound, competition between three factors: ionic charge transfer, electron-phonon coupling, and the spreading extension of the electronic wave functions. Despite its simplicity, our approach can, in essence, be applied to other quasi-2D materials to account for their CDW response at different thicknesses, thereby shedding new light on this intriguing quantum phenomenon and its underlying mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate tuning of electronic phase transitions in two-dimensional NbSe$_2$

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. Here we demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe$_2$ by an ionic liquid gate. A variation up to ~ 50% in the superconducting transition temperature has been observed, accompanied by a correlated evolution of the CDW order. We find that the doping dependence of the superconducting and CDW phase transition in 2D NbSe$_2$ can be understood by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.

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preprint2016arXiv

Interlayer breathing and shear modes in NbSe2 atomic layers

Atomically thin NbSe2 is a metallic layered transition metal dichalcogenide (TMD) with considerably different crystallographic structure and electronic properties from other TMDs, such as MoS2, MoSe2, WS2 and WSe2. Properties of TMD atomic layers are sensitive to interlayer coupling. Here we investigate the interlayer phonons of few-layer NbSe2 by ultralow-frequency Raman spectroscopy. We observe both the interlayer breathing modes and shear modes at frequencies below 40 cm-1 for samples of 2 to 15 layers. Their frequency, Raman activity, and environmental instability depend systematically on the layer number. We account for these results utilizing a combination of the linear-chain model, group-theory analysis and first-principles calculations. Although NbSe2 possesses different stacking order from MoS2, MoSe2, WS2 and WSe2, it exhibits the same symmetry and Raman selection rules, as well as similar interlayer coupling strength and thickness dependence of interlayer phonon modes.

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preprint2015arXiv

Evidence of Ising pairing in superconducting NbSe$_2$ atomic layers

Two-dimensional transition metal dichalcogenides with strong spin-orbit interactions and valley-dependent Berry curvature effects have attracted tremendous recent interests. Although novel single-particle and excitonic phenomena related to spin-valley coupling have been extensively studied, effects of spin-momentum locking on collective quantum phenomena remain unexplored. Here we report an observation of superconducting monolayer NbSe$_2$ with an in-plane upper critical field over six times of the Pauli paramagnetic limit by magneto-transport measurements. The effect can be understood in terms of the competing Zeeman effect and large intrinsic spin-orbit interactions in non-centrosymmetric NbSe$_2$ monolayers, where the electronic spin is locked to the out-of-plane direction. Our results provide a strong evidence of unconventional Ising pairing protected by spin-momentum locking and open up a new avenue for studies of non-centrosymmetric superconductivity with unique spin and valley degrees of freedom in the exact two-dimensional limit.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strongly enhanced charge-density-wave order in monolayer NbSe$_2$

Two-dimensional (2D) atomic materials possess very different properties from their bulk counterparts. While changes in the single-particle electronic properties have been extensively investigated, modifications in the many-body collective phenomena in the exact 2D limit, where interaction effects are strongly enhanced, remain mysterious. Here we report a combined optical and electrical transport study on the many-body collective-order phase diagram of 2D NbSe$_2$. Both the charge density wave (CDW) and the superconducting phase have been observed down to the monolayer limit. While the superconducting transition temperature ($T_C$) decreases with lowering the layer thickness, the newly observed CDW transition temperature ($T_{\mathrm{CDW}}$) increases drastically from 33 K in the bulk to 145 K in the monolayers. Such highly unusual enhancement of CDWs in atomically thin samples can be understood as a result of significantly enhanced electron-phonon interactions in 2D NbSe$_2$, which cause a crossover from the weak coupling to the strong coupling limit. This is supported by the large blueshift of the collective amplitude vibrations observed in our experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A broadband silicon quarter-wave retarder for far-infrared spectroscopic circular dichroism

The high brightness, broad spectral coverage and pulsed characteristics of infrared synchrotron radiation enable time-resolved spectroscopy under throughput-limited optical systems, as can occur with the high-field magnet cryostat systems used to study electron dynamics and cyclotron resonance by far-infrared techniques. A natural extension for magnetospectroscopy is to sense circular dichroism, i.e. the difference in a material's optical response for left and right circularly polarized light. A key component for spectroscopic circular dichroism is an achromatic 1/4 wave retarder functioning over the spectral range of interest. We report here the development of an in-line retarder using total internal reflection in high-resistivity silicon. We demonstrate its performance by distinguishing electronic excitations of different handednesses for GaAs in a magnetic field. This 1/4 wave retarder is expected to be useful for far-infrared spectroscopy of circular dichroism in many materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions in Pb$_{1-x}$Sn$_x$Se

The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase transitions in Pb$_{1-x}$Sn$_x$Se ($x=$0.00, 0.15, and 0.23). The results of infrared measurements as a function of pressure indicate the closing and the reopening of the band gap as well as a maximum in the free carrier spectral weight. The enhanced density of states near the band gap in the topological phase give rise to a steep interband absorption edge. The change of density of states also yields a maximum in the pressure dependence of the Fermi level. Thus our conclusive results provide a consistent picture of pressure-induced topological phase transitions and highlight the bulk origin of the novel properties in topological insulators.

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preprint2014arXiv

Generic Symmetry Breaking Instability of Topological Insulators due to a Novel van Hove Singularity

We point out that in the deep band-inverted state, topological insulators are generically vulnerable against symmetry breaking instability, due to a divergently large density of states of 1D-like exponent near the chemical potential. This feature at the band edge is associated with a novel van Hove singularity resulting from the development of a Mexican-hat band dispersion. We demonstrate this generic behavior via prototypical 2D and 3D models. This realization not only explains the existing experimental observations of additional phases, but also suggests a route to activate additional functionalities to topological insulators via ordering, particularly for the long-sought topological superconductivities.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A THz time-domain susceptibility for superconductors including strong-current effects

Finite-difference time-domain methods are increasingly being used to develop, model and analyze the response of materials, including engineered metamaterials that may contain superconductors. Though simple and useful expressions for the time-domain susceptibility exist for basic metals and dielectrics, the time-domain response for a superconductor has not been developed, mainly because the frequency-dependent expressions themselves are rather complex. In this paper we present a simple approximate expression for the time-domain susceptibility of a superconductor for the hbar/2Delta time scale (where Delta is the BCS energy gap) that fulfills causality requirements, and demonstrate its ability to model the transmission and reflection of a fully-gapped superconductor in the THz region. By allowing Delta to be a function of current, we also show how this model function can be used to describe nonlinear microwave response in superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Evidence of a full gap in LaFeAsO$_{1-x}$F$_x$ thin films from infrared spectroscopy

We report conventional and time-resolved infrared spectroscopy on LaFeAsO$_{1-x}$F$_x$ superconducting thin films. The far-infrared transmission can be quantitatively explained by a two-component model including a conventional s-wave superconducting term and a Drude term, suggesting at least one carrier system has a full superconducting gap. Photo-induced studies of excess quasiparticle dynamics reveal a nanosecond effective recombination time and temperature dependence that agree with a recombination bottleneck in the presence of a full gap. The two experiments provide consistent evidence of a full, nodeless though not necessarily isotropic, gap for at least one carrier system in LaFeAsO$_{1-x}$F$_x$.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Infrared Vortex-State Electrodynamics in Type-II Superconducting Thin Films

The vortex-state electrodynamics of s-wave superconductors has been studied by infrared spectroscopy. Far-infrared transmission and reflection spectra of superconducting NbTiN and NbN thin films were measured in a magnetic field perpendicular to the film surface, and the optical conductivity was extracted. The data show clear reduction of superconducting signature. We consider the vortex state as a two-component effective medium of normal cores embedded in a BCS superconductor. The spectral features are well explained by the Maxwell-Garnett theory. Our analysis supports the presence of magnetic-field-induced pair-breaking effects in the superconducting component outside of the vortex cores.

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preprint2013arXiv

Signatures of a Pressure-Induced Topological Quantum Phase Transition in BiTeI

We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in its ambient-pressure structure up to 8 GPa. The lattice parameter ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis bonding through pz band crossing as expected during the transition. Over the same pressure range, the infrared spectra reveal a maximum in the optical spectral weight of the charge carriers, reflecting the closing and reopening of the semiconducting band gap. Both of these features are characteristics of a topological quantum phase transition, and are consistent with a recent theoretical proposal.

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preprint2012arXiv

Effect of a magnetic field on the quasiparticle recombination in superconductors

Quasiparticle recombination in a superconductor with an s-wave gap is typically dominated by a phonon bottleneck effect. We have studied how a magnetic field changes this recombination process in metallic thin-film superconductors, finding that the quasiparticle recombination process is significantly slowed as the field increases. While we observe this for all field orientations, we focus here on the results for a field applied parallel to the thin film surface, minimizing the influence of vortices. The magnetic field disrupts the time-reversal symmetry of the pairs, giving them a finite lifetime and decreasing the energy gap. The field could also polarize the quasiparticle spins, producing different populations of spin-up and spin-down quasiparticles. Both processes favor slower recombination; in our materials we conclude that strong spin-orbit scattering reduces the spin polarization, leaving the field-induced gap reduction as the dominant effect and accounting quantitatively for the observed recombination rate reduction.

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