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Xiaoxiang Lu

Xiaoxiang Lu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Twisted Bilayer Graphene Superlattices

Twisted bilayer graphene (tBLG) provides us with a large rotational freedom to explore new physics and novel device applications, but many of its basic properties remain unresolved. Here we report the synthesis and systematic Raman study of tBLG. Chemical vapor deposition was used to synthesize hexagon- shaped tBLG with a rotation angle that can be conveniently determined by relative edge misalignment. Superlattice structures are revealed by the observation of two distinctive Raman features: folded optical phonons and enhanced intensity of the 2D-band. Both signatures are strongly correlated with G-line resonance, rotation angle and laser excitation energy. The frequency of folded phonons decreases with the increase of the rotation angle due to increasing size of the reduced Brillouin zone (rBZ) and the zone folding of transverse optic (TO) phonons to the rBZ of superlattices. The anomalous enhancement of 2D-band intensity is ascribed to the constructive quantum interference between two Raman paths enabled by a near-degenerate Dirac cone. The fabrication and Raman identification of superlattices pave the way for further basic study and new applications of tBLG.

preprint2010arXiv

Room-temperature Tunable Fano Resonance by Chemical Doping in Few-layer Graphene Synthesized by Chemical Vapor Deposition

A Fano-like phonon resonance is observed in few-layer (~3) graphene at room temperature using infrared Fourier transform spectroscopy. This Fano resonance is the manifestation of a strong electron-phonon interaction between the discrete in-plane lattice vibrational mode and continuum electronic excitations in graphene. By employing ammonia chemical doping, we have obtained different Fano line shapes ranging from anti-resonance in hole-doped graphene to phonon-dominated in n-type graphene. The Fano resonance shows the strongest interference feature when the Fermi level is located near the Dirac point. The charged phonon exhibits much-enhanced oscillator strength and experiences a continuous red shift in frequency as electron density increases. It is suggested that the phonon couples to different electronic transitions as Fermi level is tuned by chemical doping.