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Jiming Bao

Jiming Bao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticsphysics.app-phphysics.flu-dyn

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Published work

14 published item(s)

preprint2022arXiv

Generalized Dynamic Junction Theory to Resolve the Mechanism of Direct Current Generation in Liquid-Solid Interfaces

Despite the unsettled mechanism of electricity generation from the continuous flow of liquids on a surface, the charge-discharge theory has been widely accepted for alternating current (AC) generation from a moving droplet. It has been recently extended to rationalize direct current (DC) generation across a droplet moving between two different materials. By designing a reconfigurable contact between a metal wire and a water droplet moving on graphene, we show that the charge-discharge theory cannot explain the reversal of current when water-metal interfaces switch from dynamic to static. All experiments can be described after we distinguish a dynamic from a static interface and generalize the photovoltaic-like effect to all dynamic junctions: excited electrons and holes in a moving interface will be separated and swept under the built-in electrical field, leading to a DC response. This generalized theory will lead to an understanding and the design of efficient electricity generation based on interfacial charge transfer.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Marangoni Convection-Driven Laser Fountains and Waves on Free Surfaces of Liquids

It is well accepted that an outward Marangoni convection from a low surface tension region will make the surface depressed. Here, we report that this established perception is only valid for thin liquid films. Using surface laser heating, we show that in deep liquids a laser beam actually pulls up the fluid above the free surface generating fountains with different shapes. Whereas with decreasing liquid depth a transition from fountain to indentation with fountain in-indentation is observed. Further, high-speed imaging reveals a transient surface process before steady elevation is formed, and this dynamic deformation is subsequently utilized to resonantly excite giant surface waves by a modulated laser beam. Computational fluid dynamics models reveal the underlying flow patterns and quantify the depth-dependent and time-resolved surface deformations. Our discoveries and techniques have upended the century-old perception and opened up a new regime of interdisciplinary research and applications of Marangoni-induced interface phenomena and optocapillary fluidic surfaces-the control of fluids with light.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Photoacoustic Identification of Laser-induced Microbubbles as Light Scattering Centers for Optical Limiting in Liquid Suspension of Graphene Nanosheets

Liquid suspensions of carbon nanotubes, graphene and transition metal dichalcogenides have exhibited excellent performance in optical limiting. However, the underlying mechanism has remained elusive and is generally ascribed to their superior nonlinear optical properties such as nonlinear absorption or nonlinear scattering. Using graphene as an example, we show that photo-thermal microbubbles are responsible for the optical limiting as strong light scattering centers: graphene sheets absorb incident light and become heated up above the boiling point of water, resulting in vapor and microbubble generation. This conclusion is based on direct observation of bubbles above the laser beam as well as a strong correlation between laser-induced ultrasound and optical limiting. In-situ Raman scattering of graphene further confirms that the temperature of graphene under laser pulses rises above the boiling point of water but still remains too low to vaporize graphene and create graphene plasma bubbles. Photo-thermal bubble scattering is not a nonlinear optical process and requires very low laser intensity. This understanding helps us to design more efficient optical limiting materials and understand the intrinsic nonlinear optical properties of nanomaterials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Self-formed 2D/3D Heterostructure on the Edge of 2D Ruddlesden-Popper Hybrid Perovskites Responsible for Intriguing Optoelectronic Properties and Higher Cell Efficiency

The observation of low energy edge photoluminescence and its beneficial effect on the solar cell efficiency of Ruddlesden-Popper perovskites has unleashed an intensive research effort to reveal its origin. This effort, however, has been met with more challenges as the underlying material structure has still not been identified; new modellings and observations also do not seem to converge. Using 2D (BA)2(MA)2Pb3Br10 as an example, we show that 3D MAPbBr3 is formed due to the loss of BA on the edge. This self-formed MAPbBr3 can explain the reported edge emission under various conditions, while the reported intriguing optoelectronic properties such as fast exciton trapping from the interior 2D perovskite, rapid exciton dissociation and long carrier lifetime can be understood via the self-formed 2D/3D lateral perovskite heterostructure. The 3D perovskite is identified by submicron infrared spectroscopy, the emergence of XRD signature from freezer-milled nanometer-sized 2D perovskite and its photoluminescence response to external hydrostatic pressure. The revelation of this edge emission mystery and the identification of a self-formed 2D/3D heterostructure provide a new approach to engineering 2D perovskites for high-performance optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Graphene Induced Large Shift of Surface Plasmon Resonances of Gold Films: Effective Medium Theory for Atomically Thin Materials

Despite successful modeling of graphene as a 0.34-nm thick optical film synthesized by exfoliation or chemical vapor deposition (CVD), graphene induced shift of surface plasmon resonance (SPR) of gold films has remained controversial. Here we report the resolution of this controversy by developing a clean CVD graphene transfer method and extending Maxwell-Garnet effective medium theory (EMT) to 2D materials. A SPR shift of 0.24 is obtained and it agrees well with 2D EMT in which wrinkled graphene is treated as a 3-nm graphene/air layered composite, in agreement with the average roughness measured by atomic force microscope. Because the anisotropic built-in boundary condition of 2D EMT is compatible with graphene's optical anisotropy, graphene can be modelled as a film thicker than 0.34-nm without changing its optical property; however, its actual roughness, i.e., effective thickness will significantly alter its response to strong out-of-plane fields, leading to a larger SPR shift.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Photoluminescence mapping and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide

Cubic boron arsenide (BAs) is attracting greater attention due to the recent experimental demonstration of ultrahigh thermal conductivity \k{appa} above 1000 W/mK. However, its bandgap has not been settled and a simple yet effective method to probe its crystal quality is missing. Furthermore, traditional \k{appa} measurement methods are destructive and time consuming, thus they cannot meet the urgent demand for fast screening of high \k{appa} materials. After we experimentally established 1.82 eV as the indirect bandgap of BAs and observed room-temperature band-edge photoluminescence, we developed two new optical techniques that can provide rapid and non-destructive characterization of \k{appa} with little sample preparation: photoluminescence mapping (PL-mapping) and time-domain thermo-photoluminescence (TDTP). PL-mapping provides nearly real-time image of crystal quality and \k{appa} over mm-sized crystal surfaces; while TDTP allows us to pick up any spot on the sample surface and measure its \k{appa} using nanosecond laser pulses. These new techniques reveal that the apparent single crystals are not only non-uniform in \k{appa}, but also are made of domains of very distinct \k{appa}. Because PL-mapping and TDTP are based on the band-edge PL and its dependence on temperature, they can be applied to other semiconductors, thus paving the way for rapid identification and development of high-\k{appa} semiconducting materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Generation and Detection of Surface Plasmon Polaritons by Transition Metal Dichalcogenides for Chip-level Electronic-Photonic Integrated Circuits

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication at nanometer scales. A major challenge to this integration is the identification of a suitable material. After discussing the material aspect of the challenge, we identified atomically thin transition metal dichalcogenides (TMDs) as a perfect material platform to implement the circuit. The selection of TMDs is based on their very distinct property: monolayer TMDs are able to emit and absorb light at the same wavelength determined by direct exciton transitions. To prove the concept, we fabricated simple devices consisting of silver nanowires as plasmonic waveguides and monolayer TMDs as active optoelectronic media. Using photoexcitation, direct optical imaging and spectral analysis, we demonstrated generation and detection of surface plasmon polaritons by monolayer TMDs. Regarded as novel materials for electronics and photonics, transition metal dichalcogenides are expected to find new applications in next generation integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobility is ~17 cm2V-1s-1 and the on/off current ratio is ~108, which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS2 atomic layers deposited directly on SiO2 is comparable to the best exfoliated MoS2 flakes. It shows that CVD is a viable method to synthesize high quality MoS2 atomic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation of Low Energy Raman Modes in Twisted Bilayer Graphene

Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The 94 cm^-1 mode (measured with a 532 nm laser excitation) is assigned to the fundamental layer breathing vibration (ZO (prime) mode) mediated by the twisted bilayer graphene lattice, which lacks long-range translational symmetry. The dependence of this modes frequency and linewidth on the rotational angle can be explained by the double resonance Raman process which is different from the previously-identified Raman processes activated by twisted bilayer graphene superlattice. The dependence also reveals the strong impact of electronic-band overlaps of the two graphene layers. Another new mode at 52 cm^-1, not observed previously in the bilayer graphene system, is tentatively attributed to a torsion mode in which the bottom and top graphene layers rotate out-of-phase in the plane.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Twisted Bilayer Graphene Superlattices

Twisted bilayer graphene (tBLG) provides us with a large rotational freedom to explore new physics and novel device applications, but many of its basic properties remain unresolved. Here we report the synthesis and systematic Raman study of tBLG. Chemical vapor deposition was used to synthesize hexagon- shaped tBLG with a rotation angle that can be conveniently determined by relative edge misalignment. Superlattice structures are revealed by the observation of two distinctive Raman features: folded optical phonons and enhanced intensity of the 2D-band. Both signatures are strongly correlated with G-line resonance, rotation angle and laser excitation energy. The frequency of folded phonons decreases with the increase of the rotation angle due to increasing size of the reduced Brillouin zone (rBZ) and the zone folding of transverse optic (TO) phonons to the rBZ of superlattices. The anomalous enhancement of 2D-band intensity is ascribed to the constructive quantum interference between two Raman paths enabled by a near-degenerate Dirac cone. The fabrication and Raman identification of superlattices pave the way for further basic study and new applications of tBLG.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition

We evaluate how a second graphene layer forms and grows on Cu foils during chemical vapor deposition (CVD). Low-energy electron diffraction and microscopy is used to reveal that the second layer nucleates and grows next to the substrate, i.e., under a graphene layer. This underlayer mechanism can facilitate the synthesis of uniform single-layer films but presents challenges for growing uniform bilayer films by CVD. We also show that the buried and overlying layers have the same edge termination.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.

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preprint2010arXiv

Room-temperature Tunable Fano Resonance by Chemical Doping in Few-layer Graphene Synthesized by Chemical Vapor Deposition

A Fano-like phonon resonance is observed in few-layer (~3) graphene at room temperature using infrared Fourier transform spectroscopy. This Fano resonance is the manifestation of a strong electron-phonon interaction between the discrete in-plane lattice vibrational mode and continuum electronic excitations in graphene. By employing ammonia chemical doping, we have obtained different Fano line shapes ranging from anti-resonance in hole-doped graphene to phonon-dominated in n-type graphene. The Fano resonance shows the strongest interference feature when the Fermi level is located near the Dirac point. The charged phonon exhibits much-enhanced oscillator strength and experiences a continuous red shift in frequency as electron density increases. It is suggested that the phonon couples to different electronic transitions as Fermi level is tuned by chemical doping.

0 citations0 reviewsNo code linkedOpen access