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Xiaonan Chen

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2 published item(s)

preprint2023arXiv

Communication under Mixed Gaussian-Impulsive Channel: An End-to-End Framework

In many communication scenarios, the communication signals simultaneously suffer from white Gaussian noise (WGN) and non-Gaussian impulsive noise (IN), i.e., mixed Gaussian-impulsive noise (MGIN). Under MGIN channel, classical communication signal schemes and corresponding detection methods usually can not achieve desirable performance as they are optimized with respect to WGN. Moreover, as the widely adopted IN model has no analytical and general closed-form expression of probability density function (PDF), it is extremely hard to obtain optimal communication signal and corresponding detection schemes based on classical stochastic signal processing theory. To circumvent these difficulties, we propose a data-driven end-to-end framework to address the communication signal design and detection under MGIN channel in this paper. In this proposed framework, a channel noise simulator (CNS) is elaborately designed based on an improved generative adversarial net (GAN) to simulate the MGIN without requirement of any analytical PDF. Meanwhile, a multi-level wavelet convolutional neural network (MWCNN) based preprocessing network is used to mitigate the negative effect of outliers due to the IN. Compared with conventional approaches and existing end-to-end systems, extensive simulation results verify that our proposed novel end-to-end communication system can achieve better performance in terms of bit-error rate (BER) under MGIN environments.

preprint2013arXiv

Voltage-triggered Ultra-fast Metal-insulator Transition in Vanadium Dioxide Switches

Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM) structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between electrically-driven ON/OFF current ratio and thermally-induced resistance change during metal-insulator transition. It is also found that sharp metal-insulator transition could be triggered by external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance.