BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Xiaohang Li

Xiaohang Li contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mtrl-sciNetworking and Internet Architecture

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
9works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2020arXiv

\b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70%

In this work, we have demonstrated wide-composition-range \b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for \b{eta}-(AlxGa1-x)2O3 covering bandgaps from 4.9 to 6.4 eV. With optimized thermal annealing conditions, the \b{eta}-Ga2O3 binary thin films on sapphire substrates transformed to the \b{eta}-(AlGa)2O3 ternary thin films with different compositions. The binary to ternary transformation resulted from the Al atom diffusion from sapphire into the oxide layers; meanwhile, the Ga atoms diffused into sapphire leading to thicker thin films than the original thicknesses. The interdiffusion processes were confirmed by transmission electron microscopy, which enhanced in proportion to the annealing temperature. The strain states of the \b{eta}-(AlGa)2O3 films have been analyzed showing reduced in-plane compressive strain with higher annealing temperature; and the film eventually became strain-free when the temperature was 1400 oC corresponding to the Al composition of 77%. The proposed method is promising for the preparation of the \b{eta}-(AlGa)2O3 thin films without employing sophisticated direct-growth techniques for alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been carried. In this work, we have investigated the use of the B0.14Al0.86N alloy as part or entirety of the interlayer between the GaN buffer and the AlGaN barrier in the conventional GaN-based high electron mobility transistor (HEMT). The numerical results show considerable improvement of the two-dimensional electron gas (2DEG) concentration with small 2DEG leakage into the ternary layer by replacing the conventional AlN interlayer by either the B0.14Al0.86N interlayer or the B0.14Al0.86N/AlN hybrid interlayer. Consequently, the transfer characteristics can be improved. The saturation current can be enhanced as well. For instance, the saturation currents for HEMTs with the 0.5 nm B0.14Al0.86N/0.5 nm AlN hybrid interlayer and the 1 nm B0.14Al0.86N interlayer are 5.8% and 2.2% higher than that for the AlN interlayer when VGS-Vth= +3 V.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer

The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Band Alignments of Emerging Wurtzite BAlN and BGaN Semiconductors

The wurtzite III-Nitrides family of semiconductors, which include the compounds GaN, InN, and AlN, along with their derivative ternary alloys, is highly priced for its wide range of bandgaps, lattice constant tunability, high breakdown voltages, and thermal and chemical stability. The incorporation of wurtzite BxAl1-xN and BxGa1-xN ternary alloys into this family introduces an even larger range of bandgaps, lattice constants, and refractive indices, which indicates their potential in the fields of optoelectronics and power devices. An important parameter in the design of cutting edge devices is the band alignment between the different alloys. In our work, the natural band offset values between wz-BxAl1-xN and wz-BxGa1-xN alloys were investigated using ab initio simulations. The Vienna Ab initio Simulation Package was used to perform density functional theory calculations in order to obtain lattice parameters, band gap energies, and relative electrostatic potential lineups. Through these calculations, we were able to quantify the natural band offset values for the materials of interest, and as such were able to identify some general qualitative features associated with the different alloys we studied. As the growth and fabrication of wz-BAlN and wz-BGaN crystals matures, we hope that our results can provide a theoretical basis for design and analysis of cutting-edge devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study

In this work, the energy band structures of BGaN and BAlN alloys are systematically studied through first-principles calculation using HSE hybrid density functional theory by MedeA-VASP. Direct-indirect bandgap transition of BGaN alloys at B content around 44% and that of BAlN alloys at B content about 24% have been identified. The variation of electron and hole effective masses of both materials at different B compositions have also been demonstrated. A large change in hole effective masses of BGaN and BAlN alloys from B=0% to 25% has been observed. Finally, a picture of energy bandgap versus lattice constant of III-nitride family with boron is shown.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical properties of BAlN and BGaN for applications in latticematched UV optical structures

The optical properties of BAlN and BGaN ternary alloys are investigated using first-principle calculation. Hybrid density functional theory is applied to determine the refractive indices of different alloys. A peculiar non-linear behavior of the static refractive index as a function of boron composition is found. The results of this calculation are interpolated to generate a three dimensional dataset, which could be used for designing a myriad of strained and strain-free optoelectronic and photonic devices. This is then used to find a lattice-matched heterostructure optimized for DBR applications (B0.108Ga0.892N/AlN). A DBR design with 25 pairs at a wavelength of 375 nm is found to have peak reflectivity of 99.8% and a bandwidth of 26 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Polarization properties of wurtzite III nitride indicate the principle of polarization engineering

The spontaneous and piezoelectric polarizations of III-nitrides considerably affect the operation of various III-nitride-based devices. We report an ab initio study of the spontaneous polarization (SP) and piezoelectric (PZ) constants of the III-nitride binary and ternary alloys with the hexagonal reference structure. These calculated polarization properties offer us a profound principle for polarization engineering of nitride semiconductor devices, based on which we propose a few heterojunctions which have nearly-zero polarization effect at the junctions that can potentially enhance optical and power device performances. The polarization doping effect was investigated as well and by BAlN grading from AlN the polarization doping effect can be doubled.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Achieving the Scaling Law of SNR-Monitoring in Dynamic Wireless Networks

The characteristics of wireless communication channels may vary with time due to fading, environmental changes and movement of mobile wireless devices. Tracking and estimating channel gains of wireless channels is therefore a fundamentally important element of many wireless communication systems. In particular, the receivers in many wireless networks need to estimate the channel gains by means of a training sequence. This paper studies the scaling law (on the network size) of the overhead for channel gain monitoring in wireless network. We first investigate the scenario in which a receiver needs to track the channel gains with respect to multiple transmitters. To be concrete, suppose that there are n transmitters, and that in the current round of channel-gain estimation, no more than k channels suffer significant variations since the last round. We proves that "Θ(k\log((n+1)/k)) time slots" is the minimum number of time slots needed to catch up with the k varied channels. At the same time, we propose a novel channel-gain monitoring scheme named ADMOT to achieve the overhead lower-bound. ADMOT leverages recent advances in compressive sensing in signal processing and interference processing in wireless communication, to enable the receiver to estimate all n channels in a reliable and computationally efficient manner within O(k\log((n+1)/k)) time slots. To our best knowledge, all previous channel-tracking schemes require Θ(n) time slots regardless of k. Note that based on above results for single receiver scenario, the scaling law of general setting is achieved in which there are multiple transmitters, relay nodes and receivers.

0 citations0 reviewsNo code linkedOpen access