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Researcher profile

Kuang-Hui Li

Kuang-Hui Li contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2020arXiv

\b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70%

In this work, we have demonstrated wide-composition-range \b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for \b{eta}-(AlxGa1-x)2O3 covering bandgaps from 4.9 to 6.4 eV. With optimized thermal annealing conditions, the \b{eta}-Ga2O3 binary thin films on sapphire substrates transformed to the \b{eta}-(AlGa)2O3 ternary thin films with different compositions. The binary to ternary transformation resulted from the Al atom diffusion from sapphire into the oxide layers; meanwhile, the Ga atoms diffused into sapphire leading to thicker thin films than the original thicknesses. The interdiffusion processes were confirmed by transmission electron microscopy, which enhanced in proportion to the annealing temperature. The strain states of the \b{eta}-(AlGa)2O3 films have been analyzed showing reduced in-plane compressive strain with higher annealing temperature; and the film eventually became strain-free when the temperature was 1400 oC corresponding to the Al composition of 77%. The proposed method is promising for the preparation of the \b{eta}-(AlGa)2O3 thin films without employing sophisticated direct-growth techniques for alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical properties of BAlN and BGaN for applications in latticematched UV optical structures

The optical properties of BAlN and BGaN ternary alloys are investigated using first-principle calculation. Hybrid density functional theory is applied to determine the refractive indices of different alloys. A peculiar non-linear behavior of the static refractive index as a function of boron composition is found. The results of this calculation are interpolated to generate a three dimensional dataset, which could be used for designing a myriad of strained and strain-free optoelectronic and photonic devices. This is then used to find a lattice-matched heterostructure optimized for DBR applications (B0.108Ga0.892N/AlN). A DBR design with 25 pairs at a wavelength of 375 nm is found to have peak reflectivity of 99.8% and a bandwidth of 26 nm.

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