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Xiaochi Liu

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Published work

8 published item(s)

preprint2021arXiv

High-performance coherent population trapping atomic clock with direct-modulation distributed Bragg reflector laser

The coherent population trapping (CPT) atomic clock is very promising for use in next-generation spaceborne applications owing to its compactness and high performance. In this paper, we propose and implement a CPT atomic clock based on the direct modulation of a large-modulation-bandwidth and narrow-linewidth distributed Bragg reflector laser, which replaces the usually used external bulk modulator in the high-performance CPT clock. Our method retains the high performance while significantly reducing the size. Using this highly compact bichromatic light source and simplest CPT configuration, in which a circularly polarized bichromatic laser interrogates the ^{87}Rb atom system, a CPT signal of clock transition with a narrow linewidth and high contrast is observed. We then lock the local oscillator frequency to the CPT error signal and demonstrate a short-term frequency stability of 3.6 \times 10^{-13} τ^{-1/2} (4 s \le τ \le 200 s). We attribute it to the ultralow laser frequency and intensity noise as well as to the high-quality-factor CPT signal. This study can pave the way for the development of compact high-performance CPT clocks based on our scheme.

preprint2020arXiv

Spin filtering in germanium/silicon core/shell nanowires with pseudo-helical gap

Semiconductors with strong spin-orbit interactions can exhibit a helical gap with spin-momentum locking opened by a magnetic field. Such a gap is highly spin selective as a result of a topologically protected spin-momentum locking, which can be used for spin filtering. We experimentally demonstrate such a spin filtering effect in a quasi-ballistic p-type germanium/silicon core/shell nanowire (NW), which possesses a pseudo-helical gap without the application of magnetic field. Polarized hole spin injection to the NW is achieved using cobalt ferromagnetic contacts with controlled natural surface oxide on the NW as a tunnel barrier. Local and nonlocal spin valve effects are measured as the verification of polarized spin transport in the NW outside the helical gap. We electrically tune the NW into the helical gap by scanning its chemical potential with a gate. A hysteresis loop with three resistance states is observed in the local spin valve geometry, as an evidence of spin filtering in the helical gap.

preprint2016arXiv

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors (FETs) with self-heating and thermal spreading by dielectric engineering. Interestingly, we found that multilayer BP device on a SiO2 substrate exhibited a maximum current density of 3.3 x 10E10 A/m2 at an electric field of 5.58 MV/m, several times higher than multilayer MoS2. Our breakdown thermometry analysis revealed that self-heating was impeded along BP-dielectric interface, resulting in a thermal plateau inside the channel and eventual Joule breakdown. Using a size-dependent electro-thermal transport model, we extracted an interfacial thermal conductance of 1-10 MW/m2 K for the BP-dielectric interfaces. By using hBN as a dielectric material for BP instead of thermally resistive SiO2 (about 1.4 W/m K), we observed a 3 fold increase in breakdown power density and a relatively higher electric field endurance together with efficient and homogenous thermal spreading because hBN had superior structural and thermal compatibility with BP. We further confirmed our results based on micro-Raman spectroscopy and atomic force microscopy, and observed that BP devices on hBN exhibited centrally localized hotspots with a breakdown temperature of 600K, while the BP device on SiO2 exhibited a hotspot in the vicinity of the electrode at 520K.

preprint2015arXiv

Carrier Transport at the Metal-MoS2 Interface

This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the contact resistance (Rc) as a function of temperature indicate a transition in the carrier transport across the energy barrier from a thermionic emission at a high temperature to tunneling at a low temperature. Furthermore, at a low temperature, the nature of the tunneling behavior is ascertained by the current-voltage dependency that helps us feature direct tunneling at a low bias and Fowler-Nordheim tunneling at a high bias for a Pd-MoS2 contact due to the effective barrier shape modulation by biasing. In contrast, only direct tunneling is observed for a Cr-MoS2 contact over the entire applied bias range. In addition, simple analytical calculations were carried out to extract Rc at the gating range, and the results are consistent with the experimental data. Our results describe the transition in carrier transport mechanisms across a metal-MoS2 interface, and this information provides guidance for the design of future flexible, transparent electronic devices based on 2-dimensional materials.

preprint2015arXiv

P-type polar transition of chemically doped multilayer MoS2 transistor

The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning effect resulting high Rc at metal-MoS2 interface and the inherently strong n-type property of the MoS2 material. In this study, we realized a high-performance multi-layer MoS2 PFET via controllable chemical doping, which has an excellent on/off ratio of 107 and a maximum hole mobility of 72 cm2/Vs at room temperature, and these values are further exceeding to 109 and 132 cm2/Vs at 133K. In addition, we revealed that large Rc hindered the polar transition of MoS2 FET from n-type to p-type, meanwhile channel Rs limited Ion of PFET. Therefore it is suggested that reducing Rc at high work function metal-MoS2 interface and p-type doping of channel were necessary for achieving high performance MoS2 PFET. Based on the high performance PFET, we successfully demonstrated a MoS2 CMOS inverter by integrating NFET and PFET.

preprint2015arXiv

Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide

Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for 2D semiconductor devices, vertical p-n junctions are fabricated in ultrathin MoS2 by introducing AuCl3 and benzyl viologen dopants. Unlike usual unipolar MoS2, the MoS2 p-n junctions show (i) ambipolar carrier transport, (ii) current rectification via modulation of potential barrier in films thicker than 8 nm, and (iii) reversed current rectification via tunneling in films thinner than 8 nm. The ultimate thinness of the vertical p-n homogeneous junctions in MoS2 is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS2 p-n junctions present a significant potential of the 2D crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications.

preprint2013arXiv

Coherent Population Trapping Resonances in Buffer Gas-filled Cs Vapor Cells with Push-Pull Optical Pumping

We report on a theoretical study and experimental characterization of coherent population trapping (CPT) resonances in buffer gas-filled vapor cells with push-pull optical pumping (PPOP) on Cs D1 line. We point out that the push-pull interaction scheme is identical to the so-called lin per lin polarization scheme. Expressions of the relevant dark states, as well as of absorption, are reported. The experimental setup is based on the combination of a distributed feedback (DFB) diode laser, a pigtailed intensity Mach-Zehnder electro-optic modulator (MZ EOM) for optical sidebands generation and a Michelson-like interferometer. A microwave technique to stabilize the transfer function operating point of the MZ EOM is implemented for proper operation. A CPT resonance contrast as high as 78% is reported in a cm-scale cell for the magnetic-field insensitive clock transition. The impact of the laser intensity on the CPT clock signal key parameters (linewidth - contrast - linewidth/contrast ratio) is reported for three different cells with various dimensions and buffer gas contents. The potential of the PPOP technique for the development of high-performance atomic vapor cell clocks is discussed.

preprint2013arXiv

Ramsey spectroscopy of high-contrast CPT resonances with push-pull optical pumping in Cs vapor

We report the detection of high-contrast and narrow Coherent Population Trapping (CPT) Ramsey fringes in a Cs vapor cell using a simple-architecture laser system. The latter allows the combination of push-pull optical pumping (PPOP) and a temporal Ramsey-like pulsed interrogation. An originality of the optics package is the use of a single Mach-Zehnder electro-optic modulator (MZ EOM) both for optical sidebands generation and light switch for pulsed interaction. Typical Ramsey fringes with a linewidth of 166 Hz and a contrast of 33 % are detected in a cm-scale buffer-gas filled Cs vapor cell. This technique could be interesting for the development of high-performance and low power consumption compact vapor cell clocks based on CPT.