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Xiangwei Jiang

Xiangwei Jiang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Revisiting Document Image Dewarping by Grid Regularization

This paper addresses the problem of document image dewarping, which aims at eliminating the geometric distortion in document images for document digitization. Instead of designing a better neural network to approximate the optical flow fields between the inputs and outputs, we pursue the best readability by taking the text lines and the document boundaries into account from a constrained optimization perspective. Specifically, our proposed method first learns the boundary points and the pixels in the text lines and then follows the most simple observation that the boundaries and text lines in both horizontal and vertical directions should be kept after dewarping to introduce a novel grid regularization scheme. To obtain the final forward mapping for dewarping, we solve an optimization problem with our proposed grid regularization. The experiments comprehensively demonstrate that our proposed approach outperforms the prior arts by large margins in terms of readability (with the metrics of Character Errors Rate and the Edit Distance) while maintaining the best image quality on the publicly-available DocUNet benchmark.

preprint2019arXiv

Anharmonic corrections to the multiphonon deep-level charge capture ab initio calculations for semiconductors

Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised analysis of K. Huang's original nonradiative multi-phonon (NMP) theory with ab initio calculations. First, we identify at first-principle level that Huang's concise formula gives the same results as the matrix based formula, and Huang's high temperature formula provides an analytical expression for the coupling constant in Marcus theory. Secondly, the anharmonic effects are corrected by taking into account local phonon mode variation at different charge states of the defect. The corrected capture rates for defects in GaN and SiC agree well with experiments.