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Researcher profile

Xiangbiao Liao

Xiangbiao Liao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2016arXiv

Effects of intrinsic strain on the structural stability and mechanical properties of phosphorene nanotubes

Using molecular dynamics (MD) simulations, we explore the structural stability and mechanical integrity of phosphorene nanotubes (PNTs), where the intrinsic strain in the tubular PNT structure plays an important role. It is proposed that the atomic structure of larger-diameter armchair PNTs (armPNTs) can remain stable at higher temperature, but the high intrinsic strain in the hoop direction renders zigzag PNTs (zigPNTs) less favorable. The mechanical properties of PNTs, including the Young's modulus and fracture strength, are sensitive to the diameter, showing a size dependence. A simple model is proposed to express the Young's modulus as a function of the intrinsic axial strain which in turns depends on the diameter of PNTs. In addition, the compressive buckling of armPNTs is length-dependent, whose instability modes transit from column buckling to shell buckling are observed as the ratio of diameter/length increases.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Prediction of a Two-dimensional Phosphorus Nitride Monolayer

Today, 2D semiconductor materials have been extended into the nitrogen group: phosphorene, arsenene, antimonene and even nitrogene. Motivated by them, based upon first-principles density functional calculations, we propose a new two-dimensional phosphorus nitride (PN) structure that is stable well above the room temperature, due to its extremely high cohesive energy. Unlike phosphorene, PN structure is resistant to high temperature oxidation. The structure is predicted to be a semiconductor with a wide, indirect band gap of 2.64 eV. More interestingly, the phosphorus nitride monolayer experiences an indirect-to-direct band-gap transition at a relatively small tensile strain. Such dramatic transformation in the electronic structure combined with structural stability and oxidation resistance at high temperature could pave the way for exciting innovations in high-speed ultrathin transistors, power electronic modules, ultra-high efficiency LEDs and semiconductor lasers.

0 citations0 reviewsNo code linkedOpen access