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Feng Hao

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Published work

8 published item(s)

preprint2022arXiv

Vanishing theorem for tame harmonic bundles via $L^2$-cohomology

Using $L^2$-methods, we prove a vanishing theorem for tame harmonic bundles over quasi-compact Kähler manifolds in a very general setting. As a special case, we give a completely new proof of the Kodaira type vanishing theorems for Higgs bundles due to Arapura. To prove our vanishing theorem, we construct a fine resolution of the Dolbeault complex for tame harmonic bundles via the complex of sheaves of $L^2$-forms, and we establish the Hörmander $L^2$-estimate and solve $(\bar{\partial}_E+θ)$-equations for Higgs bundles $(E,θ)$.

preprint2021arXiv

Equality in the Bogomolov--Miyaoka--Yau inequality in the non-general type case

We classify all minimal models X of dimension n, Kodaira dimension n-1 and with vanishing Chern number $c_1^{n-2}c_2(X)=0$. This solves a problem of Kollár. Completing previous work of Kollár and Grassi, we also show that there is a universal constant $ε>0$ such that any minimal threefold satisfies either $c_1c_2=0$ or $-c_1c_2>ε$. This settles completely a conjecture of Kollár.

preprint2020arXiv

Flexo-diffusion effect: the strong influence on lithium diffusion induced by strain gradient

Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) significantly affects Li diffusion barrier, which is termed as the flexo-diffusion effect, through first-principles calculations. The Li diffusion barrier substantially decreases/increases under the positive/negative strain gradient, leading to the change of Li diffusion coefficient in several orders of magnitude at 300 K. Interestingly, the regulation effect of strain gradient is much more significant than that of uniform strain field, which can have a remarkable effect on the rate performance of batteries, with a considerable increase in the ionic conductivity and a slight change of the original material structure. Moreover, our ab initio molecular dynamics simulations (AIMD) show that the asymmetric distorted lattice structure provides a driving force for Li diffusion, resulting in oriented diffusion along the positive strain gradient direction. These findings could extend present LIBs technologies by introducing the novel strain gradient engineering.

preprint2020arXiv

Strain gradient drives lithium dendrite growth from the atomic-scale simulations

Dendrite formation is a major obstacle, such as capacity loss and short circuit, to the next-generation high-energy-density lithium (Li) metal batteries. The development of successful Li dendrite mitigation strategies is impeded by an insufficient understanding of Li dendrite growth mechanisms. Li-plating-induced internal stress in Li metal and its effect on dendrite growth have been studied in previous models and experiments, while the underlying microcosmic mechanism is elusive. Here, we analyze the role of plating-induced stress in dendrite formation through first-principles calculations and ab initio molecular dynamics simulations. We show that the deposited Li forms a stable atomic nanofilm structure on copper (Cu) substrate. It is found that the adsorption energy of Li atoms increases from the Li-Cu interface to deposited Li surface, leading to more aggregated Li atoms at the interface. Compared to the pristine Li metal, the deposited Li in the early stage becomes compacted and suffers in-plane compressive stress. Interestingly, we find that there is a giant strain gradient distribution from the Li-Cu interface to deposited Li surface, which makes the deposited atoms adjacent to the Cu surface tend to press upwards with perturbation, causing the dendrite growth. This understanding provides an insight to the atomic-scale origin of Li dendrite growth and may be useful for suppressing the Li dendrite in the Li-metal-based rechargeable batteries.

preprint2016arXiv

Effects of intrinsic strain on the structural stability and mechanical properties of phosphorene nanotubes

Using molecular dynamics (MD) simulations, we explore the structural stability and mechanical integrity of phosphorene nanotubes (PNTs), where the intrinsic strain in the tubular PNT structure plays an important role. It is proposed that the atomic structure of larger-diameter armchair PNTs (armPNTs) can remain stable at higher temperature, but the high intrinsic strain in the hoop direction renders zigzag PNTs (zigPNTs) less favorable. The mechanical properties of PNTs, including the Young's modulus and fracture strength, are sensitive to the diameter, showing a size dependence. A simple model is proposed to express the Young's modulus as a function of the intrinsic axial strain which in turns depends on the diameter of PNTs. In addition, the compressive buckling of armPNTs is length-dependent, whose instability modes transit from column buckling to shell buckling are observed as the ratio of diameter/length increases.

preprint2016arXiv

Prediction of a Two-dimensional Phosphorus Nitride Monolayer

Today, 2D semiconductor materials have been extended into the nitrogen group: phosphorene, arsenene, antimonene and even nitrogene. Motivated by them, based upon first-principles density functional calculations, we propose a new two-dimensional phosphorus nitride (PN) structure that is stable well above the room temperature, due to its extremely high cohesive energy. Unlike phosphorene, PN structure is resistant to high temperature oxidation. The structure is predicted to be a semiconductor with a wide, indirect band gap of 2.64 eV. More interestingly, the phosphorus nitride monolayer experiences an indirect-to-direct band-gap transition at a relatively small tensile strain. Such dramatic transformation in the electronic structure combined with structural stability and oxidation resistance at high temperature could pave the way for exciting innovations in high-speed ultrathin transistors, power electronic modules, ultra-high efficiency LEDs and semiconductor lasers.

preprint2016arXiv

TouchSignatures: Identification of User Touch Actions and PINs Based on Mobile Sensor Data via JavaScript

Conforming to W3C specifications, mobile web browsers allow JavaScript code in a web page to access motion and orientation sensor data without the user's permission. The associated risks to user security and privacy are however not considered in W3C specifications. In this work, for the first time, we show how user security can be compromised using these sensor data via browser, despite that the data rate is 3 to 5 times slower than what is available in app. We examine multiple popular browsers on Android and iOS platforms and study their policies in granting permissions to JavaScript code with respect to access to motion and orientation sensor data. Based on our observations, we identify multiple vulnerabilities, and propose TouchSignatures which implements an attack where malicious JavaScript code on an attack tab listens to such sensor data measurements. Based on these streams, TouchSignatures is able to distinguish the user's touch actions (i.e., tap, scroll, hold, and zoom) and her PINs, allowing a remote website to learn the client-side user activities. We demonstrate the practicality of this attack by collecting data from real users and reporting high success rates using our proof-of-concept implementations. We also present a set of potential solutions to address the vulnerabilities. The W3C community and major mobile browser vendors including Mozilla, Google, Apple and Opera have acknowledge our work and are implementing some of our proposed countermeasures.