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Researcher profile

Xian-Peng Zhang

Xian-Peng Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.acc-phquant-ph

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Published work

5 published item(s)

preprint2026arXiv

Open quantum theory of magnetoresistance in mesoscopic magnetic materials

Magnetoresistance (MR) in magnetic materials arises from spin-exchange coupling between local moments and itinerant electrons, representing a challenging many-body open-quantum problem. Here we develop a comprehensive microscopic theory of MR within an open-quantum-system framework by solving the Liouville-von Neumann equation for a hybrid system of free electrons and local moments using the time-convolutionless projection operator method. Our approach reveals both ferromagnetic and antiferromagnetic MR as consequences of temperature- and field-dependent spin decoherence, encompassing spin relaxation and dephasing. In particular, the resistance associated with spin decoherence is governed by the order parameters of magnetic materials, such as the magnetization in ferromagnets and the Néel vector in antiferromagnets. This theory deepens the fundamental understanding of MR and offers guidance for interpreting and designing experiments on magnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

A Theory of Anisotropic Magnetoresistance in Altermagnets and Its Applications

Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting opportunities for spintronics. A key challenge in altermagnetic spintronics is the efficient reading and writing of information by switching the Neel vector orientations to represent binary 0 and 1. Here, we develop a microscopic theory of the magnetoresistance effect in altermagnets and propose that magnetoresistance anisotropy can serve as an effective mechanism for the electrical readout of the Neel vector. Our theory describes a two-step charge-spin-charge conversion process governed by the interplay between spin splitting and spin Hall effects: a longitudinal electric field induces transverse drift spin currents, which induce significant spin accumulation at the boundaries, generating a diffusive spin current that is converted back into a longitudinal charge current. By switching the Neel vector, a substantial change in magnetoresistance, akin to giant magnetoresistance in ferromagnets, is realized, enabling an electrically readable altermagnetic memory. Our microscopic theory provides deeper insights into the fundamental physics of the magnetoresistance effect in altermagnets and offers valuable guidance for designing next-generation ultradense and ultrafast spintronic devices based on altermagnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coupled superconducting spin qubits with spin-orbit interaction

Superconducting spin qubits, also known as Andreev spin qubits, promise to combine the benefits of superconducting qubits and spin qubits defined in quantum dots. While most approaches to control these qubits rely on controlling the spin degree of freedom via the supercurrent, superconducting spin qubits can also be coupled to each other via the superconductor to implement two-qubit quantum gates. We theoretically investigate the interaction between superconducting spin qubits in the weak tunneling regime and concentrate on the effect of spin-orbit interaction (SOI), which can be large in semiconductor-based quantum dots and thereby offers an additional tuning parameter for quantum gates. We find analytically that the effective interaction between two superconducting spin qubits consists of Ising, Heisenberg, and Dzyaloshinskii-Moriya interactions and can be tuned by the superconducting phase difference, the tunnel barrier strength, or the SOI parameters. The Josephson current becomes dependent on SOI and spin orientations. We demonstrate that this interaction can be used for fast controlled phase-flip gates with a fidelity >99.99%. We propose a scalable network of superconducting spin qubits which is suitable for implementing the surface code.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Back-n White Neutron Source at CSNS and its Applications

Back-streaming neutrons from the spallation target of the China Spallation Neutron Source (CSNS) that emit through the incoming proton channel were exploited to build a white neutron beam facility (the so-called Back-n white neutron source), which was completed in March 2018. The Back-n neutron beam is very intense, at approximately 2*10^7 n/cm^2/s at 55 m from the target, and has a nominal proton beam with a power of 100 kW in the CSNS-I phase and a kinetic energy of 1.6 GeV and a thick tungsten target in multiple slices with modest moderation from the cooling water through the slices. In addition, the excellent energy spectrum spanning from 0.5 eV to 200 MeV, and a good time resolution related to the time-of-flight measurements make it a typical white neutron source for nuclear data measurements; its overall performance is among that of the best white neutron sources in the world. Equipped with advanced spectrometers, detectors, and application utilities, the Back-n facility can serve wide applications, with a focus on neutron-induced cross-section measurements. This article presents an overview of the neutron beam characteristics, the experimental setups, and the ongoing applications at Back-n.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance

Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure we obtain the temperature dependence of the spin conductances ($G_s$, $G_r$ and $G_i$), disentangling the contribution of field-like torque ($G_i$), damping-like torque ($G_r$), and spin-flip scattering ($G_s$). An interfacial exchange field of the order of 1 meV acting upon the conduction electrons of Pt can be estimated from $G_i$, which is at least three times larger than $G_r$ below the Curie temperature. Our work provides an easy method to quantify this interfacial spin-splitting field, which play a key role in emerging fields such as superconducting spintronics and caloritronics, and topological quantum computation.

0 citations0 reviewsNo code linkedOpen access