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Researcher profile

X. Jehl

X. Jehl contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

5 published item(s)

preprint2021arXiv

Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor

In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of circuit is especially conceived for the readout of semiconductor spin qubits. As opposed to commonly used schemes based on dispersive rf reflectometry, which require mm-scale passive inductors, it allows for a markedly reduced footprint (50$μ$m $\times$ 60$μ$m), facilitating its integration in a scalable quantum-classical architecture. In addition, its active inductor results in a resonant circuit with tunable frequency and quality factor, enabling the optimization of readout sensitivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A hybrid metal/semiconductor electron pump for quantum metrology

Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck constant, to voltage, resistance and current. We present here single-island hybrid metal/semiconductor transistor pumps which combine the simplicity and efficiency of Coulomb blockade in metals with the unsurpassed performances of silicon switches. Robust and simple pumping at 650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the calculated value, well within the 1.5e-3 uncertainty of the measurement setup. Multi-charge pumping can be performed. The simple design fully integrated in an industrial CMOS process makes it an ideal candidate for national measurement institutes to realize and share a future quantum ampere.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coupling and coherent electrical control of two dopants in a silicon nanowire

Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we can electrically couple two donors embedded in a multi-gate silicon transistor, and induce coherent oscillations in their charge states by means of microwave signals. We measure single-electron tunneling across the two donors, which reveals their energy spectrum. The lowest energy states, corresponding to a single electron located on either of the two donors, form a two-level system (TLS) well separated from all other electronic levels. Gigahertz driving of this TLS results in a quantum interference pattern associated with the absorption or the stimulated emission of up to ten microwave photons. We estimate a charge dephasing time of 0.3 nanoseconds, consistent with other types of charge quantum bits. Here, however, the relatively short coherence time can be counterbalanced by fast operation signals (in principle up to 1 terahertz) as allowed by the large empty energy window separating ground and excited states in donor atoms. The demonstrated coherent coupling of two donors constitutes an essential step towards donor-based quantum computing devices in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Single donor ionization energies in a nanoscale CMOS channel

One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics industry. While single-dopant signatures have been observed at low temperature, studying the impact of only one dopant up to room temperature requires extremely small lengths. Here, we show that a single arsenic dopant dramatically affects the off-state behavior of an advanced microelectronics field effect transistor (FET) at room temperature. Furthermore, the ionization energy of this dopant should be profoundly modified by the close proximity of materials with a different dielectric constant than the host semiconductor. We measure a strong enhancement, from 54meV to 108meV, of the ionization energy of an arsenic atom located near the buried oxide. This enhancement is responsible for the large current below threshold at room temperature and therefore explains the large variability in these ultra-scaled transistors. The results also suggest a path to incorporating quantum functionalities into silicon CMOS devices through manipulation of single donor orbitals.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy

We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies accurately and we show how the capacitance matrices of the traps can be obtained from the shape of the anomalies. From these capacitance matrices we deduce that the traps are located near or inside the wire. Based on the occurrence of the anomalies in wires with different doping levels we infer that most of the traps are arsenic dopant states. In some cases the anomalies are accompanied by a random telegraph signal which allows time resolved monitoring of the occupation of the trap. The spin of the trap states is determined via the Zeeman shift.

0 citations0 reviewsNo code linkedOpen access