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X. Hong

X. Hong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sciastro-ph.COastro-ph.IMcond-mat.supr-conastro-ph.HEcond-mat.dis-nn

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Published work

14 published item(s)

preprint2026arXiv

Magnetic Excitations of a Half-Filled Tl-based Cuprate

Strong electron correlations drive Mott insulator transitions. Yet, there exists no framework to classify Mott insulators by their degree of correlation. Cuprate superconductors, with their tunable doping and rich phase diagrams, offer a unique platform to investigate the evolution of these interactions. However, spectroscopic access to a clean half-filled Mott-insulating state is lacking in compounds with the highest superconducting onset temperature. To fill this gap, we introduce a pristine, half-filled thallium-based cuprate system, Tl$_2$Ba$_5$Cu$_4$O$_{x}$. Using high-resolution resonant inelastic x-ray scattering, we probe long-lived magnon excitations and uncover a pronounced kink in the magnon dispersion, marked by a simultaneous change in group velocity and lifetime broadening. Modeling the dispersion within a Hubbard-Heisenberg approach, we extract the interaction strength and compare it with other cuprate systems. Our results establish a cuprate universal relation between electron-electron interaction and magnon zone-boundary dispersion. Superconductivity seems to be optimal at intermediate correlation strength, suggesting an optimal balance between localization and itinerancy.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Decoupling of Static and Dynamic Charge Correlations revealed by Uniaxial Strain in a Cuprate Superconductor

We use uniaxial strain in combination with ultra-high-resolution Resonant Inelastic X-ray Scattering (RIXS) at the oxygen K- and copper L3-edges to study the excitations stemming from the charge ordering wave vector in La1.875Sr0.125CuO4. By detwinning stripe ordering, we demonstrate that the optical phonon anomalies do not show any stripe anisotropy. The low-energy charge excitations also retain an in-plane four-fold symmetry. As such, we find that both phonon and charge excitations are decoupled entirely from the strength of static charge ordering. The almost isotropic character of charge excitations is indicative of a quantum critical behaviour and remains a possible source for the strange metal properties found in the normal state of cuprate superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Abrupt Enhancement of Spin-Orbit Scattering Time in Ultrathin Semimetallic SrIrO$_3$ Close to the Metal-Insulator Transition

We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker than 1.6 nm, where the charge mobility at 10 K increases from 45 cm$^2$/Vs to 150 cm$^2$/Vs with decreasing film thickness. In the two-dimensional regime, the charge dephasing and spin-orbit scattering lengths extracted from the weak localization/anti-localization effects show power-law dependence on temperature, pointing to the important role of electron-electron interaction. The spin-orbit scattering time $τ_\text{so}$ exhibits an Elliott-Yafet mechanism dominated quasi-linear dependence on the momentum relaxation time $τ_\text{p}$. Ultrathin films approaching the critical thickness of metal-insulator transition show an abrupt enhancement in $τ_\text{so}$, with the corresponding $τ_\text{so}/τ_\text{p}$ about 7.6 times of the value for thicker films. A likely origin for such unusual enhancement is the onset of strong electron correlation, which leads to charge gap formation and suppresses spin scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effect of Strain on Ferroelectric Field Effect in Strongly Correlated Oxide Sm$_{0.5}$Nd$_{0.5}$NiO$_3$

We report the effect of epitaxial strain on the magnitude and retention of the ferroelectric field effect in high quality PbZr$_{0.3}$Ti$_{0.7}$O$_3$ (PZT)/3.8-4.3 nm Sm$_{0.5}$Nd$_{0.5}$NiO$_3$ (SNNO) heterostructures grown on (001) LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) substrates. For SNNO on LAO, which exhibits a first-order metal-insulator transition (MIT), switching the polarization of PZT induces a 10 K shift in the transition temperature $T_{MI}$, with a maximum resistance change between the on and off states of $Δ$$R$/$R_{on}$ ~75%. In sharp contrast, only up to 5% resistance change has been induced in SNNO on STO, where the MIT is second-order, with the modulation of $T_{MI}$ negligibly small. We also observe thermally activated retention of the off state resistance $R_{off}$ in both systems, with the activation energy of 22 meV (28 meV) for devices on LAO (STO). The time dynamics and thermal response of the field effect instability points to phonon-assisted interfacical trapping of charged mobile defects, which are attributed to strain induced oxygen vacancies. At room temperature, $R_{off}$ stabilizes at ~55% and ~19% of the initial switching levels for SNNO on LAO and STO, respectively, reflecting the significantly different oxygen vacancy densities in these two systems. Our results reveal the critical role of strain in engineering and modeling the complex oxide composite structures for nanoelectronic and spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Optimizing Broadband Terahertz Modulation with Hybrid Graphene/Metasurface Structures

We demonstrate efficient terahertz (THz) modulation by coupling graphene strongly with a broadband THz metasurface device. This THz metasurface, made of periodic gold slit arrays, shows near unity broadband transmission, which arises from coherent radiation of the enhanced local-field in the slits. Utilizing graphene as an active load with tunable conductivity, we can significantly modify the local-field enhancement and strongly modulate the THz wave transmission. This hybrid device also provides a new platform for future nonlinear THz spectroscopy study of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Structural Changes Related to the Magnetic Transitions in Hexagonal InMnO3

Two magnetic ordering transitions are found in InMnO3, the paramagnetic to antiferromagnetic transition near ~118 K and a lower possible spin rotation transition near ~42 K. Multiple length scale structural measurements reveal enhanced local distortion found to be connected with tilting of the MnO5 polyhedra as temperature is reduced. Strong coupling is observed between the lattice and the spin manifested as changes in the structure near both of the magnetic ordering temperatures (at ~42 K and ~ 118 K). External parameters such as pressure are expected to modify the coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent ζ ranges from 0.39 to 0.48 and the DW creep exponent μ varies from 0.20 to 0.28, revealing an unexpected effective dimensionality of ~1.5 that is independent of film thickness. Our results suggest predominantly 2D ferroelectricity in the layered polymer and we attribute the fractal dimensionality to DW deroughening due to the correlations between the in-plane and out-of-plane polarization, an effect that can be exploited to achieve high lateral domain density for developing nanoscale ferroelectrics-based applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Integrating Functional Oxides with Graphene

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O_3 (PZT) and high-k HfO_2. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO_2-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene-oxide hybrid structures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron-electron interaction and electron-hole asymmetry in bilayer graphene

We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the hole mass m*_h and the electron mass m*_e increase with increasing density, demonstrating the hyperbolic nature of the bands. The hole mass m*_h is approximately 20-30% larger than the electron mass m*_e. Tight-binding calculations provide a good description of the electron-hole asymmetry and yield an accurate measure of the inter-layer hopping parameter v_4 = 0.063. Both m*_h and m*_e are substantially suppressed compared to single-particle values, providing clear and unprecedented evidence for the strong renormalization effect of electron-electron interaction in the band structure of bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron-electron interaction and electron-hole asymmetry in bilayer graphene (Supporting Materials)

We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the hole mass m*_h and the electron mass m*_e increase with increasing density, demonstrating the hyperbolic nature of the bands. The hole mass m*_h is approximately 20-30% larger than the electron mass m*_e. Tight-binding calculations provide a good description of the electron-hole asymmetry and yield an accurate measure of the inter-layer hopping parameter v_4 = 0.063. Both m*_h and m*_e are substantially suppressed compared to single-particle values, providing clear and unprecedented evidence for the strong renormalization effect of electron-electron interaction in the band structure of bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Global e-VLBI observations of the gamma-ray narrow line Seyfert 1 PMN J0948+0022

There is growing evidence of relativistic jets in radio-loud narrow-line Seyfert 1 (RL-NLS1) galaxies. We constrain the observational properties of the radio emission in the first RL-NLS1 galaxy ever detected in gamma-rays, PMN J0948+0022, i.e., its flux density and structure in total intensity and in polarization, its compactness, and variability. We performed three real-time e-VLBI observations of PMN J0948+0022 at 22 GHz, using a global array including telescopes in Europe, East Asia, and Australia. These are the first e-VLBI science observations ever carried out with a global array, reaching a maximum baseline length of 12458 km. The observations were part of a large multiwavelength campaign in 2009. The source is detected at all three epochs. The structure is dominated by a bright component, more compact than 55 microarcsec, with a fainter component at a position angle theta~ 35deg. Relativistic beaming is required by the observed brightness temperature of 3.4x10^11 K. Polarization is detected at a level of about 1%. The parameters derived by the VLBI observations, in addition to the broad-band properties, confirm that PMN J0948+0022 is similar to flat spectrum radio quasars. Global e-VLBI is a reliable and promising technique for future studies.

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preprint2010arXiv

The first scientific experiment using Global e-VLBI observations: a multiwavelength campaign on the gamma-ray Narrow-Line Seyfert 1 PMN J0948+0022

The detection of gamma-ray emission by Fermi-LAT from the radio loud Narrow Line Seyfert 1 PMN J0948+0022 (Abdo et al. 2009, ApJ 699, 976) triggered a multi-wavelength campaign between March and July 2009. Given its high compactness (Doi et al. 2006, PASJ 58, 829), inverted spectrum, and 0deg declination, the source was an ideal target to observe at 22 GHz with a Global VLBI array extending from Europe to East Asia and Australia. In order to deliver prompt results to be analysed in combination with the other instruments participating in the campaign, the observations were carried out with real time VLBI, for the first time on a Global scale. Indeed, the main results have been published just a few months after the campaign (Abdo et al. 2009, ApJ 707, 727). Here we present additional details about the e-VLBI observations.

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preprint2010arXiv

Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 hours at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.

0 citations0 reviewsNo code linkedOpen access