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X. Gan

X. Gan contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Efficient Second Harmonic Generation from Silicon Slotted Nanocubes with Bound States in the Continuum

Optical materials with centrosymmetry, such as silicon and germanium, are unfortunately absent of second-order nonlinear optical responses, hindering their developments in efficient nonlinear optical devices. Here, a design with an array of slotted nanocubes is proposed to realize remarkable second harmonic generation (SHG) from the centrosymmetric silicon, which takes advantage of enlarged surface second-order nonlinearity, strengthened electric field over the surface of the air-slot, as well as the resonance enhancement by the bound states in the continuum. Compared with that from the array of silicon nanocubes without air-slots, SHG from the slotted nanocube array is improved by more than two orders of magnitude. The experimentally measured SHG efficiency of the silicon slotted nanocube array is high as 1.8*10^-4 W^-1, which is expected to be further engineered by modifying the air-slot geometries. Our result could provide a new strategy to expand nonlinear optical effects and devices of centrosymmetric materials.

preprint2022arXiv

High-Q Resonances Governed by the Quasi-Bound States in the Continuum in All-Dielectric Metasurfaces

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound states in the continuum (BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.