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X. B. Zhu

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Published work

12 published item(s)

preprint2022arXiv

Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$

The magnetic topological materials have attracted significant attention due to their potential realization of variety of novel quantum phenomena. EuIn$_2$As$_2$ has recently been theoretically recognized as a long awaited intrinsic antiferromagnetic bulk axion insulator. However, the experimental study on transport properties arising from the topological states in this material is scarce. In this paper, we perform the detailed magnetoresistance (MR) and Hall measurements to study the magnetotransport properties of this material. We find that the transport is strongly influenced by the spin configuration of the Eu moments from the concomitant change in the field dependence of the MR and that of the magnetization below the Néel temperature. Most importantly, an anomalous Hall effect (AHE) and a large topological Hall effect (THE) are observed. We suggest that the AHE is originated from a nonvanishing net Berry curvature due to the helical spin structure and that the THE is attributed to the formation of a noncoplanar spin texture with a finite scalar spin chirality induced by the external magnetic field in EuIn$_2$As$_2$. Our studies provide a platform to understand the influence of the interplay between the topology of electronic bands and the field-induced magnetic structure on magnetoelectric transport properties. In addition, our observations give a hint to realize axion insulator states and high-order topological insulator states through manipulating the magnetic state of EuIn$_2$As$_2$.

preprint2020arXiv

Superconducting and Topological Properties in Centrosymmetric PbTaS2 Single Crystals

We report the superconductivity of PbTaS2 single crystals with the centrosymmetric structure. The systematic measurements of magnetization, electric transport and specific heat indicate that PbTaS2 is a weakly coupled type-II superconductor with transition temperature Tc = 2.6 K. Furthermore, the band structure calculations predicted four nodal lines near the Fermi energy with drumhead-like surface states, suggesting centrosymmetric PbTaS2 is a candidate of topological nodal line semimetals. These results demonstrate that PbTaS2 may open up another avenue for further exploring the properties of superconductivity and topological nodal-line states.

preprint2020arXiv

Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe

The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature,which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.

preprint2016arXiv

Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering

The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can be effectively tuned by the applied biaxial strain. The Seebeck coefficient and therefore the peak value of the power factor (with the relaxation time inserted) increase when the degeneracy of the band valleys is increased by the strain. When no strain is applied, the HfS2 monolayer is an excellent n-type thermoelectric material, while the thermoelectric performance of the p-type doped one is poor. The applied tensile strain of 6% can increase the room-temperature ZT value of the p-type doped system to 3.67, which is five times larger than that of the unstrained one. The much more balanced ZT values of the p- and n-type doping are favorable for fabrication of both p- and n-legs of thermoelectric modules. Our results indicate that the thermoelectric performance of the HfS2 monolayer can be greatly improved by the valley engineering through the method of strain.

preprint2016arXiv

Manipulating charge-density-wave in $1T$-TaS$_{2}$ by charge carrier doping: A first-principles investigation

The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in $1T$-TaS$_{2}$. We investigate the charge doping effects on the electronic structures and phonon instabilities of $1T$ structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer $1T$-TaS$_{2}$, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with $T_{c}$ of $6\sim7$ K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in $1T$-TaS$_{2}$, which makes the novel material have very promising applications in the future electronic devices.

preprint2015arXiv

Spin-orbit coupling enhanced superconductivity in Bi-rich compounds ABi$_{3}$ (A=Sr and Ba)

Recently, Bi-based compounds have attracted attentions because of the strong spin-orbit coupling (SOC). In this work, we figured out the role of SOC in ABi$_{3}$ (A=Sr and Ba) by theoretical investigation of the band structures, phonon properties, and electron-phonon coupling. Without SOC, strong Fermi surface nesting leads to phonon instabilities in ABi$_{3}$. SOC suppresses the nesting and stabilizes the structure. Moreover, without SOC the calculation largely underestimates the superconducting transition temperatures ($T_{c}$), while with SOC the calculated $T_{c}$ are very close to those determined by measurements on single crystal samples. The SOC enhanced superconductivity in ABi$_{3}$ is due to not only the SOC induced phonon softening, but also the SOC related increase of electron-phonon coupling matrix elements. ABi$_{3}$ can be potential platforms to construct heterostructure of superconductor/topological insulator to realize topological superconductivity.

preprint2015arXiv

Superconductivity in CaSn3 single crystal with a AuCu3-type structure

We report the superconductivity of the CaSn3 single crystal with a AuCu3-type structure, namely cubic space group Pm3m. The superconducting transition temperature TC=4.2 K is determined by the magnetic susceptibility, electrical resistivity, and heat capacity measurements. The magnetization versus magnetic field (M-H) curve at low temperatures shows the typical-II superconducting behavior. The estimated lower and upper critical fields are about 125 Oe and 1.79 T, respectively. The penetration depth λ(0) and coherence length ξ(0) are calculated to be approximately 1147 nm and 136 nm by the Ginzburg-Landau equations. The estimated Sommerfeld coefficient of the normal state γ_N is about 2.9 mJ/mol K2. ΔC/γNTC =1.13 and λep=0.65 suggest that CaSn3 single crystal is a weakly coupled superconductor. Electronic band structure calculations show a complex multi-sheet Fermi surface formed by three bands and a low density of states (DOS) at the Fermi level, which is consistent with the experimental results. Based on the analysis of electron phonon coupling of AX3 compounds (A=Ca, La, and Y; X=Sn and Pb), we theoretically proposed a way to increase TC in the system.

preprint2011arXiv

Quantum and classical resonant escapes of a strongly-driven Josephson junction

The properties of phase escape in a dc SQUID at 25 mK, which is well below quantum-to-classical crossover temperature $T_{cr}$, in the presence of strong resonant ac driving have been investigated. The SQUID contains two Nb/Al-AlO$_{x} $/Nb tunnel junctions with Josephson inductance much larger than the loop inductance so it can be viewed as a single junction having adjustable critical current. We find that with increasing microwave power $W$ and at certain frequencies $ν$ and $ν$/2, the single primary peak in the switching current distribution, \textrm{which is the result of macroscopic quantum tunneling of the phase across the junction}, first shifts toward lower bias current $I$ and then a resonant peak develops. These results are explained by quantum resonant phase escape involving single and two photons with microwave-suppressed potential barrier. As $W$ further increases, the primary peak gradually disappears and the resonant peak grows into a single one while shifting further to lower $I$. At certain $W$, a second resonant peak appears, which can locate at very low $I$ depending on the value of $ν$. Analysis based on the classical equation of motion shows that such resonant peak can arise from the resonant escape of the phase particle with extremely large oscillation amplitude resulting from bifurcation of the nonlinear system. Our experimental result and theoretical analysis demonstrate that at $T\ll T_{cr}$, escape of the phase particle could be dominated by classical process, such as dynamical bifurcation of nonlinear systems under strong ac driving.

preprint2011arXiv

Quantum Phase Diffusion in a Small Underdamped Josephson Junction

Quantum phase diffusion in a small underdamped Nb/AlO$_x$/Nb junction ($\sim$ 0.4 $μ$m$^2$) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the running state are considered. The transition rate extracted from the experimental switching current distribution follows the predicted Arrhenius law in the thermal regime but is greatly enhanced when MQT becomes dominant.

preprint2009arXiv

Superconductivity and single crystal growth of Ni0:05TaS2

Superconductivity was discovered in a Ni0:05TaS2 single crystal. A Ni0:05TaS2 single crystal was successfully grown via the NaCl/KCl flux method. The obtained lattice constant c of Ni0:05TaS2 is 1.1999 nm, which is significantly smaller than that of 2H-TaS2 (1.208 nm). Electrical resistivity and magnetization measurements reveal that the superconductivity transition temperature of Ni0:05TaS2 is enhanced from 0.8 K (2H-TaS2) to 3.9 K. The charge-density-wave transition of the matrix compound 2H-TaS2 is suppressed in Ni0:05TaS2. The success of Ni0:05TaS2 single crystal growth via a NaCl/KCl flux demonstrates that NaCl/KCl flux method will be a feasible method for single crystal growth of the layered transition metal dichalcogenides.

preprint2009arXiv

The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3

The temperature dependences of magnetization, electrical transport, and thermal transport properties of antiperovskite compound SnCMn3 have been investigated systematically. A positive magnetoresistance (~11%) is observed around the ferrimagnetic-paramagnetic transition (TC ~ 280 K) in the field of 50 kOe, which can be attributed to the field-induced magnetic phase transition. The abnormalities of resistivity, Seebeck coefficient, normal Hall effect and thermal conductivity near TC are suggested to be associated with an abrupt reconstruction of electronic structure. Further, our results indicate an essential interaction among lattice, spin and charge degrees of freedom around TC. Such an interaction among various degrees of freedom associated with sudden phase transition is suggested to be characteristic of Mn-based antiperovskite compounds.

preprint2009arXiv

Tunneling spectra of submicron Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions: evolution from superconducting gap to pseudogap

Tunneling spectra of near optimally doped, submicron Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions are presented, and examined in the region where the superconducting gap evolves into pseudogap. The spectra are analyzed using a self-energy model, proposed by Norman {\it et al.}, in which both quasiparticle scattering rate $Γ$ and pair decay rate $Γ_Δ$ are considered. The density of states derived from the model has the familiar Dynes' form with a simple replacement of $Γ$ by $γ_+$ = ($Γ$ + $Γ_Δ$)/2. The $γ_+$ parameter obtained from fitting the experimental spectra shows a roughly linear temperature dependence, which puts a strong constraint on the relation between $Γ$ and $Γ_Δ$. We discuss and compare the Fermi arc behavior in the pseudogap phase from the tunneling and angle-resolved photoemission spectroscopy experiments. Our results indicate an excellent agreement between the two experiments, which is in favor of the precursor pairing view of the pseudogap.