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Researcher profile

Wulf Wulfhekel

Wulf Wulfhekel contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallcond-mat.str-elquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Magnetic domain walls of the van der Waals material Fe$_3$GeTe$_2$

Among two-dimensional materials, Fe$_3$GeTe$_2$ has come to occupy a very important place owing to its ferromagnetic nature with one of the highest Curie temperatures among known van der Waals materials and the potential for hosting skyrmions. In this combined experimental and theoretical work, we investigate the magnetic bubble domains as well as the microscopic domain wall profile using spin-polarized scanning tunneling microscopy in combination with atomistic spin-dynamics simulations performed with parameters from density functional theory calculations. We find a weak magneto-electric effect influencing the domain wall width by the electric field in the tunneling junction and determine the critical magnetic field for the collapse of the bubble domains. Our findings shed light on the origins of complex magnetism that Fe$_3$GeTe$_2$ exhibits.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Friedel Oscillations and superconducting-gap enhancement by impurity scattering

Experiments observe an enhanced superconducting gap over impurities as compared to the clean-bulk value. In order to shed more light on this phenomenon, we perform simulations within the framework of Bogoliubov-deGennes theory applied to the attractive Hubbard model. The simulations qualitatively reproduce the experimentally observed enhancement effect; it can be traced back to an increased particle density in the metal close to the impurity site. In addition, the simulations display significant differences between a thin (2D) and a very thick (3D) film. In 2D pronounced Friedel oscillations can be observed, which decay much faster in (3D) and therefore are more difficult to resolve. Also this feature is in qualitative agreement with the experiment.

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preprint2019arXiv

Microscopic charging and in-gap states in superconducting granular aluminum

Following the emergence of superconducting granular aluminum (grAl) as a material for high-impedance quantum circuits, future development hinges on a microscopic understanding of its phase diagram, and whether the superconductor-to-insulator transition (SIT) is driven by disorder or charging effects. Beyond fundamental relevance, these mechanisms govern noise and dissipation in microwave circuits. Although the enhancement of the critical temperature, and the SIT in granular superconductors have been studied for more than fifty years, experimental studies have so far provided incomplete information on the microscopic phenomena. Here we present scanning tunneling microscope measurements of the local electronic structure of superconducting grAl. We confirm an increased superconducting gap in individual grains both near and above the Mott resistivity $ρ_\mathrm{M} \approx 400\ μΩcm$. Above $ρ_\mathrm{M}$ we find Coulomb charging effects, a first indication for decoupling, and in-gap states on individual grains, which could contribute to flux noise and dielectric loss in quantum devices. We also observe multiple low-energy states outside the gap, which may indicate bosonic excitations of the superconducting order parameter.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetoresistance through a single molecule

The use of single molecules to design electronic devices is an extremely challenging and fundamentally different approach to further downsizing electronic circuits. Two-terminal molecular devices such as diodes were first predicted [1] and, more recently, measured experimentally [2]. The addition of a gate then enabled the study of molecular transistors [3-5]. In general terms, in order to increase data processing capabilities, one may not only consider the electron's charge but also its spin [6,7]. This concept has been pioneered in giant magnetoresistance (GMR) junctions that consist of thin metallic films [8,9]. Spin transport across molecules, i.e. Molecular Spintronics remains, however, a challenging endeavor. As an important first step in this field, we have performed an experimental and theoretical study on spin transport across a molecular GMR junction consisting of two ferromagnetic electrodes bridged by a single hydrogen phthalocyanine (H2Pc) molecule. We observe that even though H2Pc in itself is nonmagnetic, incorporating it into a molecular junction can enhance the magnetoresistance by one order of magnitude to 52%.

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