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Wonho Lee

Wonho Lee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2022arXiv

Understanding Energy Efficiency and Interference Tolerance in Millimeter Wave Receivers

Power consumption is a key challenge in millimeter wave (mmWave) receiver front-ends, due to the need to support high dimensional antenna arrays at wide bandwidths. Recently, there has been considerable work in developing low-power front-ends, often based on low-resolution ADCs and low-power mixers. A critical but less studied consequence of such designs is the relatively low-dynamic range which in turn exposes the receiver to adjacent carrier interference and blockers. This paper provides a general mathematical framework for analyzing the performance of mmWave front-ends in the presence of out-of-band interference. The goal is to elucidate the fundamental trade-off of power consumption, interference tolerance and in-band performance. The analysis is combined with detailed network simulations in cellular systems with multiple carriers, as well as detailed circuit simulations of key components at 140 GHz. The analysis reveals critical bottlenecks for low-power interference robustness and suggests designs enhancements for use in practical systems.

preprint2016arXiv

Flexible MgO barrier magnetic tunnel junctions

Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible electronics. Here, we present flexible MgO barrier magnetic tunnel junction (MTJ) devices fabricated using a transfer printing process, which exhibit reliable and stable operation under substantial deformation of the device substrates. In addition, the flexible MTJ devices yield significantly enhanced tunneling magnetoresistance (TMR) of ~300 % and improved abruptness of switching, as residual strain in the MTJ structure induced by the fabrication process is released during the transfer process. This approach could be useful for a wide range of flexible electronic systems that require high performance memory components.