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Source author record

Wolfgang Windl

Wolfgang Windl appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-phcond-mat.mes-hallphysics.atom-phphysics.data-anquant-ph

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Published work

12 published item(s)

preprint2022arXiv

Bayesian calibration of interatomic potentials for binary alloys

Developing reliable interatomic potential models with quantified predictive accuracy is crucial for atomistic simulations. Commonly used potentials, such as those constructed through the embedded atom method (EAM), are derived from semi-empirical considerations and contain unknown parameters that must be fitted based on training data. In the present work, we investigate Bayesian calibration as a means of fitting EAM potentials for binary alloys. The Bayesian setting naturally assimilates probabilistic assertions about uncertain quantities. In this way, uncertainties about model parameters and model errors can be updated by conditioning on the training data and then carried through to prediction. We apply these techniques to investigate an EAM potential for a family of gold-copper systems in which the training data correspond to density-functional theory values for lattice parameters, mixing enthalpies, and various elastic constants. Through the use of predictive distributions, we demonstrate the limitations of the potential and highlight the importance of statistical formulations for model error.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Origin of Enhanced Zone Lines in Field Desorption Maps

Artifacts in the collective desorption map of the detector hits impede a truthful reconstruction, including enhanced "zone lines" with high atomic impact intensity. Since APT is destructive, simulation is the only approach to explain the origin of these zone lines, but previous work couldn't reproduce them. Here, we use a new simulation technique that adds the full electrostatic forces to the interatomic forces in a molecular-dynamics simulation and eliminates the previous ad-hoc assumptions. We find for the canonical example of tungsten that evaporation happens when the electrostatic force overpowers the interatomic force, and the misalignment of the two forces deviates the launch direction of the atoms in certain zones, giving rise to an accumulation of hit events around zone lines.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Rapid Production of Accurate Embedded-Atom Method Potentials for Metal Alloys

A critical limitation to the wide-scale use of classical molecular dynamics for alloy design is the limited availability of suitable interatomic potentials. Here, we introduce the Rapid Alloy Method for Producing Accurate General Empirical Potentials or RAMPAGE, a computationally economical procedure to generate binary embedded-atom model potentials from already-existing single-element potentials that can be further combined into multi-component alloy potentials. We present the quality of RAMPAGE calibrated Finnis-Sinclair type EAM potentials using binary Ag-Al and ternary Ag-Au-Cu as case studies. We demonstrate that RAMPAGE potentials can reproduce bulk properties and forces with greater accuracy than that of other alloy potentials. In some simulations, it is observed the quality of the optimized cross interactions can exceed that of the original off-the-shelf elemental potential inputs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Native point defects from stoichiometry-linked chemical potentials in cubic boron arsenide

The presence of a point defect typically breaks the stoichiometry in a semiconductor. For example, a vacancy on an A-site in an AB compound makes the crystal B-rich. As the stoichiometry changes, so do the chemical potentials. While the prevalent first-principles methods have provided significant insight into characters of point defects in a transparent manner, the crucial connection between crystal stoichiometry and chemical potentials is usually not made. However, ad hoc choices for chemical potentials can lead to nonphysical negative formation energies in some Fermi level ranges, along with questions about charge balance. Herein, we formulate a canonical framework describing how the chemical potential of each element is directly linked to the composition of the crystal under (off-)stoichiometric conditions instead of the ad hoc assumption that the chemical potential is the elemental limit under a certain growth condition. Consequently, the chemical potential changes with the Fermi level within the band gap, and the formation energies are positive. Using such an approach, we present $ab$ $initio$ results for native point defects in BAs, a semiconductor with ultra-high room temperature thermal conductivity. We find that antisites are the constitutional defects in off-stoichiometric material, while B$_\mathrm{As}$ antisites and B vacancies dominate in the stoichiometric material. We further discuss the thermodynamic equilibrium and charge neutrality point in BAs in light of our stoichiometry-determined chemical potentials. As discussed, our work offers a more applicable and accessible approach to tackle defect formation energies in semiconductors, especially the ones with wide gap where negative formation energies are commonly seen.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Non-Linear Arrhenius Behavior of Self-Diffusion in $β$-Ti and Mo

While anomalous diffusion coefficients with non-Arrhenius like temperature dependence are observed in a number of metals, a conclusive comprehensive framework of explanation has not been brought forward to date. Here, we use first-principles calculations based on density functional theory to calculate self-diffusion coefficients in the bcc metals Mo and $β$-Ti by coupling quasiharmonic transition state theory and large displacement phonon calculations and show that anharmonicity from thermal expansion is the major reason for the anomalous temperature dependence. We use a modified Debye approach to quantify the thermal expansion over the entire temperature range and introduce a method to relax the vacancy structure in a mechanically unstable crystal such as $β$-Ti. Thermal expansion is found to weakly affect the activation enthalpy but has a strong effect on the prefactor of the diffusion coefficient, reproducing the non-linear, non-Arrhenius "anomalous" self-diffusion in both bcc systems with good agreement between calculation and experiment. The proposed methodology is general and simple enough to be applicable to other mechanically unstable crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Improved model for the thermal conductivity of binary metallic systems

We extended and corrected Mott's two-band model for the composition-dependence of thermal and electrical conductivity in binary metal alloys based on high-throughput time-domain thermoreflectance (TDTR) measurements on diffusion multiples and scatterer-density calculations from first principles. Examining PdAg, PtRh, AuAg, AuCu, PdCu, PdPt, and NiRh binary alloys, we found that the nature of the two dominant scatterer-bands considered in the Mott model changes with the alloys, and should be interpreted as a combination of the dominant element-specific s- and/or d-orbitals. Using calculated orbital and element-resolved density-of-states values calculated with density functional theory as input, we determined the correct orbital mix that dominates electron scattering for all examined alloys and find excellent agreement between fitted models and experiments. The proposed description of the composition dependence of the resistivity can be readily implemented into the CALPHAD framework.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effects of the local structure dependence of evaporation fields on field evaporation behavior

Accurate three dimensional reconstructions of atomic positions, and full quantification of the information contained in atom probe tomography data relies on understanding the physical processes taking place during field evaporation of atoms from needle-shaped specimens. However, the modeling framework for atom probe tomography has remained qualitative at best. Building on the continuum field models previously developed, we introduce a more physical approach with the selection of evaporation events based on density functional theory calculations. This new model reproduces key features observed experimentally in terms of sequence of evaporation, desorption maps, and depth resolution, and provides insights into the physical limit for spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Structural evolution and kinetics in Cu-Zr Metallic Liquids

The atomic structure of the supercooled liquid has often been discussed as a key source of glass formation in metals. The presence of icosahedrally-coordinated clusters and their tendency to form networks have been identified as one possible structural trait leading to glass forming ability in the Cu-Zr binary system. In this work, we show that this theory is insufficient to explain glass formation at all compositions in that binary system. Instead, we propose that the formation of ideally-packed clusters at the expense of atomic arrangements with excess or deficient free volume can explain glass-forming by a similar mechanism. We show that this behavior is reflected in the structural relaxation of a metallic glass during constant pressure cooling and the time evolution of structure at a constant volume. We then demonstrate that this theory is sufficient to explain slowed diffusivity in compositions across the range of Cu-Zr metallic glasses.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fast Free Energy Calculations for Unstable High-Temperature Phases

We present a fast and accurate method to calculate vibrational properties for mechanically unstable high temperature phases that suffer from imaginary frequencies at zero temperature. The method is based on standard finite-difference calculations with optimized large displacements and is significantly more efficient than other methods. We demonstrate its application for calculation of phonon dispersion relations, free energies, phase transition temperatures, and vacancy formation energies for body-centered cubic high-temperature phases of Ti, Zr, and Hf.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Full first-principles theory of spin relaxation in group-IV materials

We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the Elliott-Yafet mechanism, where spin relaxation is induced by momentum scattering off phonons and impurities. In silicon, we find a $\sim T^{-3}$ temperature dependence of the phonon-limited spin relaxation time T$_1$ and a value of 4.3 ns at room temperature, in agreement with experiments. For the phonon-dominated regime in diamond and graphite, we predict a stronger $\sim T^{-5}$ and $\sim T^{-4.5}$ dependence that limits $T_1$ (300 K) to 180 and 5.8 ns, respectively. A key aspect of this study is that the parameter-free nature of our approach provides a method to study the effect of {\em any} type of impurity or defect on spin-transport. Furthermore we find that the spin-mix amplitude in silicon does not follow the $E_g^{-2}$ band gap dependence usually assigned to III-V semiconductors but follows a much weaker and opposite $E_g^{0.67}$ dependence. This dependence should be taken into account when constructing silicon spin transport models.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Rapid Production of Accurate Embedded-Atom Method Potentials for Metal Alloys

The most critical limitation to the wide-scale use of classical molecular dynamics for alloy design is the availability of suitable interatomic potentials. In this work, we demonstrate a simple procedure to generate a library of accurate binary potentials using already-existing single-element potentials that can be easily combined to form multi-component alloy potentials. For the Al-Ni, Cu-Au, and Cu-Al-Zr systems, we show that this method produces results comparable in accuracy to alloy potentials where all parts have been fitted simultaneously, without the additional computational expense. Furthermore, we demonstrate applicability to both crystalline and amorphous phases.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures

We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films.

0 citations0 reviewsNo code linkedOpen access