Researcher profile

Wolfgang Windl

Wolfgang Windl contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Bayesian calibration of interatomic potentials for binary alloys

Developing reliable interatomic potential models with quantified predictive accuracy is crucial for atomistic simulations. Commonly used potentials, such as those constructed through the embedded atom method (EAM), are derived from semi-empirical considerations and contain unknown parameters that must be fitted based on training data. In the present work, we investigate Bayesian calibration as a means of fitting EAM potentials for binary alloys. The Bayesian setting naturally assimilates probabilistic assertions about uncertain quantities. In this way, uncertainties about model parameters and model errors can be updated by conditioning on the training data and then carried through to prediction. We apply these techniques to investigate an EAM potential for a family of gold-copper systems in which the training data correspond to density-functional theory values for lattice parameters, mixing enthalpies, and various elastic constants. Through the use of predictive distributions, we demonstrate the limitations of the potential and highlight the importance of statistical formulations for model error.

preprint2022arXiv

Origin of Enhanced Zone Lines in Field Desorption Maps

Artifacts in the collective desorption map of the detector hits impede a truthful reconstruction, including enhanced "zone lines" with high atomic impact intensity. Since APT is destructive, simulation is the only approach to explain the origin of these zone lines, but previous work couldn't reproduce them. Here, we use a new simulation technique that adds the full electrostatic forces to the interatomic forces in a molecular-dynamics simulation and eliminates the previous ad-hoc assumptions. We find for the canonical example of tungsten that evaporation happens when the electrostatic force overpowers the interatomic force, and the misalignment of the two forces deviates the launch direction of the atoms in certain zones, giving rise to an accumulation of hit events around zone lines.

preprint2022arXiv

Rapid Production of Accurate Embedded-Atom Method Potentials for Metal Alloys

A critical limitation to the wide-scale use of classical molecular dynamics for alloy design is the limited availability of suitable interatomic potentials. Here, we introduce the Rapid Alloy Method for Producing Accurate General Empirical Potentials or RAMPAGE, a computationally economical procedure to generate binary embedded-atom model potentials from already-existing single-element potentials that can be further combined into multi-component alloy potentials. We present the quality of RAMPAGE calibrated Finnis-Sinclair type EAM potentials using binary Ag-Al and ternary Ag-Au-Cu as case studies. We demonstrate that RAMPAGE potentials can reproduce bulk properties and forces with greater accuracy than that of other alloy potentials. In some simulations, it is observed the quality of the optimized cross interactions can exceed that of the original off-the-shelf elemental potential inputs.

preprint2021arXiv

Native point defects from stoichiometry-linked chemical potentials in cubic boron arsenide

The presence of a point defect typically breaks the stoichiometry in a semiconductor. For example, a vacancy on an A-site in an AB compound makes the crystal B-rich. As the stoichiometry changes, so do the chemical potentials. While the prevalent first-principles methods have provided significant insight into characters of point defects in a transparent manner, the crucial connection between crystal stoichiometry and chemical potentials is usually not made. However, ad hoc choices for chemical potentials can lead to nonphysical negative formation energies in some Fermi level ranges, along with questions about charge balance. Herein, we formulate a canonical framework describing how the chemical potential of each element is directly linked to the composition of the crystal under (off-)stoichiometric conditions instead of the ad hoc assumption that the chemical potential is the elemental limit under a certain growth condition. Consequently, the chemical potential changes with the Fermi level within the band gap, and the formation energies are positive. Using such an approach, we present $ab$ $initio$ results for native point defects in BAs, a semiconductor with ultra-high room temperature thermal conductivity. We find that antisites are the constitutional defects in off-stoichiometric material, while B$_\mathrm{As}$ antisites and B vacancies dominate in the stoichiometric material. We further discuss the thermodynamic equilibrium and charge neutrality point in BAs in light of our stoichiometry-determined chemical potentials. As discussed, our work offers a more applicable and accessible approach to tackle defect formation energies in semiconductors, especially the ones with wide gap where negative formation energies are commonly seen.

preprint2021arXiv

Non-Linear Arrhenius Behavior of Self-Diffusion in $β$-Ti and Mo

While anomalous diffusion coefficients with non-Arrhenius like temperature dependence are observed in a number of metals, a conclusive comprehensive framework of explanation has not been brought forward to date. Here, we use first-principles calculations based on density functional theory to calculate self-diffusion coefficients in the bcc metals Mo and $β$-Ti by coupling quasiharmonic transition state theory and large displacement phonon calculations and show that anharmonicity from thermal expansion is the major reason for the anomalous temperature dependence. We use a modified Debye approach to quantify the thermal expansion over the entire temperature range and introduce a method to relax the vacancy structure in a mechanically unstable crystal such as $β$-Ti. Thermal expansion is found to weakly affect the activation enthalpy but has a strong effect on the prefactor of the diffusion coefficient, reproducing the non-linear, non-Arrhenius "anomalous" self-diffusion in both bcc systems with good agreement between calculation and experiment. The proposed methodology is general and simple enough to be applicable to other mechanically unstable crystals.