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Researcher profile

Oscar D. Restrepo

Oscar D. Restrepo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.atom-phphysics.comp-phquant-ph

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Published work

6 published item(s)

preprint2016arXiv

Improved model for the thermal conductivity of binary metallic systems

We extended and corrected Mott's two-band model for the composition-dependence of thermal and electrical conductivity in binary metal alloys based on high-throughput time-domain thermoreflectance (TDTR) measurements on diffusion multiples and scatterer-density calculations from first principles. Examining PdAg, PtRh, AuAg, AuCu, PdCu, PdPt, and NiRh binary alloys, we found that the nature of the two dominant scatterer-bands considered in the Mott model changes with the alloys, and should be interpreted as a combination of the dominant element-specific s- and/or d-orbitals. Using calculated orbital and element-resolved density-of-states values calculated with density functional theory as input, we determined the correct orbital mix that dominates electron scattering for all examined alloys and find excellent agreement between fitted models and experiments. The proposed description of the composition dependence of the resistivity can be readily implemented into the CALPHAD framework.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effects of the local structure dependence of evaporation fields on field evaporation behavior

Accurate three dimensional reconstructions of atomic positions, and full quantification of the information contained in atom probe tomography data relies on understanding the physical processes taking place during field evaporation of atoms from needle-shaped specimens. However, the modeling framework for atom probe tomography has remained qualitative at best. Building on the continuum field models previously developed, we introduce a more physical approach with the selection of evaporation events based on density functional theory calculations. This new model reproduces key features observed experimentally in terms of sequence of evaporation, desorption maps, and depth resolution, and provides insights into the physical limit for spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

First-Principles Simulation of Electron Mean-Free-Path Spectra and Thermoelectric Properties in Silicon

The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of phonon MFPs in recent years, the spectral distribution of electron MFPs remains unclear. In this work, we compute the energy dependent electron scatterings and MFPs in silicon from first-principles. The electrical conductivity accumulation with respect to electron MFPs is compared to that of the phonon thermal conductivity accumulation to illustrate the quantitative impact of nanostructuring on electron and phonon transport. By combining all electron and phonon transport properties from first-principles, we predict the thermoelectric properties of the bulk and nanostructured silicon, and find that silicon with 20 nm nanograins can result in more than five times enhancement in their thermoelectric figure of merit as the grain boundaries scatter phonons more significantly than that of electrons due to their disparate MFP distributions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fast Free Energy Calculations for Unstable High-Temperature Phases

We present a fast and accurate method to calculate vibrational properties for mechanically unstable high temperature phases that suffer from imaginary frequencies at zero temperature. The method is based on standard finite-difference calculations with optimized large displacements and is significantly more efficient than other methods. We demonstrate its application for calculation of phonon dispersion relations, free energies, phase transition temperatures, and vacancy formation energies for body-centered cubic high-temperature phases of Ti, Zr, and Hf.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Full first-principles theory of spin relaxation in group-IV materials

We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the Elliott-Yafet mechanism, where spin relaxation is induced by momentum scattering off phonons and impurities. In silicon, we find a $\sim T^{-3}$ temperature dependence of the phonon-limited spin relaxation time T$_1$ and a value of 4.3 ns at room temperature, in agreement with experiments. For the phonon-dominated regime in diamond and graphite, we predict a stronger $\sim T^{-5}$ and $\sim T^{-4.5}$ dependence that limits $T_1$ (300 K) to 180 and 5.8 ns, respectively. A key aspect of this study is that the parameter-free nature of our approach provides a method to study the effect of {\em any} type of impurity or defect on spin-transport. Furthermore we find that the spin-mix amplitude in silicon does not follow the $E_g^{-2}$ band gap dependence usually assigned to III-V semiconductors but follows a much weaker and opposite $E_g^{0.67}$ dependence. This dependence should be taken into account when constructing silicon spin transport models.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures

We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films.

0 citations0 reviewsNo code linkedOpen access