Researcher profile

Wolfgang Anwand

Wolfgang Anwand contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

Outstanding crystalline perfection is a key requirement for the formation of new forms of electronic order in a vast number of widely different materials. Whereas excellent sample quality represents a standard claim in the literature, there are, quite generally, no reliable microscopic probes to establish the nature and concentration of lattice defects such as voids, dislocations and different species of point defects on the level relevant to the length and energy scales inherent to these new forms of order. Here we report an experimental study of the archetypical skyrmion-lattice compound MnSi, where we relate the characteristic types of point defects and their concentration to the magnetic properties by combining different types of positron spectroscopy with ab-initio calculations and bulk measurements. We find that Mn antisite disorder broadens the magnetic phase transitions and lowers their critical temperatures, whereas the skyrmion lattice phase forms for all samples studied underlining the robustness of this topologically non-trivial state. Taken together, this demonstrates the unprecedented sensitivity of positron spectroscopy in studies of new forms of electronic order.

preprint2015arXiv

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in the low fluence range of neutrons or after annealing treatments. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Combining both experimental and first-principles calculation results, the defect-induced ferromagnetism can be understood as a local effect which cannot be scaled up with the volume. Therefore, our investigation answers the long-standing question why the defect-induced ferromagnetic signal is weak.

preprint2012arXiv

Temperature stable 1.3 μm emission from GaAs

Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 μm from millisecond-range thermally treated GaAs. It is shown that the VAs donor and X acceptor pairs are responsible for the 1.3 μm emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 μm emission can be easily tuned by controlling doping and annealing conditions.