Researcher profile

Witold Skowronski

Witold Skowronski contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Electric-field tunable spin waves in PMN-PT/NiFe heterostructure: experiment and micromagnetic simulations

We present a comprehensive theoretical and experimental study of voltage-controlled standing spin waves resonance (SSWR) in PMN-PT/NiFe multiferroic heterostructures patterned into microstrips. A spin-diode technique was used to observe ferromagnetic resonance (FMR) mode and SSWR in NiFe strip mechanically coupled with a piezoelectric substrate. Application of an electric field to a PMNPT creates a strain in permalloy and thus shifts the FMR and SSWR fields due to the magnetostriction effect. The experimental results are compared with micromagnetic simulations and a good agreement between them is found for dynamics of FMR and SSWR with and without electric field. Moreover, micromagnetic simulations enable us to discuss the amplitude and phase spatial distributions of FMR and SSWR modes, which are not directly observable by means of spin diode detection technique.

preprint2016arXiv

Temperature dependence of spin-orbit torques in W/CoFeB bilayers

We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution from interface spin-orbit interactions compared to, for example, Ta. Transmission electron microscopy measurements reveal that considerable interface mixing between W and CoFeB is primarily responsible for this effect.

preprint2011arXiv

Inductive determination of the optimum tunnel barrier thickness in magnetic tunnelling junction stacks for spin torque memory applications

We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of the precession frequency we are able to derive the uniaxial anisotropy energy and the exchange coupling between the free and the pinned layer. Furthermore the field dependence of the effective damping parameter is derived. Below a certain threshold barrier thickness we observe an increased effective damping for antiparallel orientation of free and pinned layer which would inhibit reversible low current density spin torque magnetization reversal. Such inductive measurements, in combination with wafer probe station based magneto transport experiments, allow a fast determination of the optimum tunnel barrier thickness range for spin torque memory applications in a lithography free process.