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Wenzhong Wang

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Published work

2 published item(s)

preprint2020arXiv

Anomalous thermal properties and spin crossover of ferromagnesite (Mg,Fe)CO3

Ferromagnesite (Mg,Fe)CO3, also referred to as magnesiosiderite at high iron concentration, is a solid solution of magnesite (MgCO3) and siderite (FeCO3). Ferromagnesite is believed to enter the Earth's lower mantle via subduction and is considered a major carbon carrier in the Earth's lower mantle, playing a key role in the Earth's deep carbon cycle. Experiments have shown that ferromagnesite undergoes a pressure-induced spin crossover, accompanied by volume and elastic anomalies, in the lower-mantle pressure range. In this work, we investigate thermal properties of (Mg,Fe)CO3 using first-principles calculations. We show that nearly all thermal properties of ferromagnesite are drastically altered by iron spin crossover, including anomalous reduction of volume, anomalous softening of bulk modulus, and anomalous increases of thermal expansion, heat capacity, and Guneisen parameter. Remarkably, the anomaly of heat capacity remains prominent (up to 40%) at high temperature without smearing out, which suggests that iron spin crossover may significantly affect the thermal properties of subducting slabs and the Earth's deep carbon cycle.

preprint2014arXiv

Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of the intrinsic G mode phonon energy. Above knowledge is vital in understanding the physical phenomena of graphene under high power or high temperature.