BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Wenxu Zhang

Wenxu Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hall

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
13works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2021arXiv

Spin Hall Conductivity and Anomalous Hall Conductivity in Full Heusler compounds

The spin Hall conductivity (SHC) and anomalous Hall conductivity (AHC) in more than 120 full Heusler compounds are calculated using density functional theory in a high-throughtput way. The electronic structures are mapped to the Wannier basis and the linear response theory is used to get the conductivity. Our results show that the mechanism under the SHC or AHC cannot be simply related to the valence electron numbers or atomic weights, is related to the very details of the electronic structure, which can only be obtained by calculations. A high throughput calculation is efficient to screen out the desired materials. According to our present results, Cu2CoSn, as well as Co2MnAl and Co2MnGa are candidates in spintronic materials regarding to their high SHC and AHC values, which can benefit the spin-torque-driven nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dependence of the Inverse Spin Hall Effect in Sr(Nb$_x$Ti$_{1-x}$)O$_3$ on the Nb concentration

We measured the spin rectify effect and the inverse spin Hall effect in Nb-doped SrTiO$_3$ by injecting the spins from ferromagnetic thin films to SrTiO$_3$ using spin pumping. It was shown that the spin injection is increased when the doping level is increased. However, the spin Hall angle decreases when Nb occupies more than $\sim$2\% of the Ti sites, which is due to that beyond this concentration, the electron contributed the spin Hall effect is from the $d-$orbitals of Nb instead those from the Ti. Our work points to the importance of orbital occupations in the (inverse) spin Hall effect. We may explore controllable spin and charge interconversion in oxide spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunning Spin Hall conductivities in GeTe by Ferroelectric Polarization

Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We demonstrated that the spin Hall conductivity (SHC) can be further tuned by ferroelectricity based on the density functional theory calculations. The spin texture variation driven by the electric fields was elucidated from the symmetry point of view, highlighting the interlocked spin and orbital degrees of freedom. We observed that the origin of SHC can be attributed to the Rashba effect and the intrinsic spin-orbit coupling. The magnitude of one component of SHC σ_xy^z can reach as large as 100 {\hbar}/e/(Ωcm) in the vicinity of the band edge, which is promising for engineering spintronic devices. Our work on tunable spin transport properties via the ferroelectric polarization brings novel assets into the field of spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Collapse of the magnetic moment under pressure of AFe$_2$ (A = Y, Zr, Lu and Hf) in the cubic Laves phase

The electronic structures of four Laves phase iron compounds (e.g. YFe$_2$, ZrFe$_2$, LuFe$_2$ and HfFe$_2$) have been calculated by the state-of-the-art full potential electronic structure code. The magnetic moments collapse under hydrostatic pressure. This feature is found to be universal in these materials. Its electronic origin is provided by the sharp peaks in the density of states near the Fermi level. It is shown that a first order quantum phase transition can be expected under pressure in Y(Zr, or Lu)Fe$_2$, while a second order one in HfFe$_2$. The bonding characteristics are discussed to elucidate the equilibrium lattice constant variation. The large spontaneous volume magnetostriction gives one of the most important character of these compounds. Invar anomalies in these compounds can be partly explained by the current work when the fast continuous magnetic moment decrease at the decrease of the lattice constant was properly considered. This work may remind the experimentalists of these "old" compounds and exploration of the quantum properties under high pressures are greatly encouraged.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Screening for Two dimensional MX$_2$ semiconductors with possible high room temperature mobility

We calculated the electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. Long wave longitudinal acoustical and optical phonon scatterings are included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WSe$_2$, PtS$_2$ and PtSe$_2$, are promising regarding to the possible high electron mobility and finite band gap. The phonon limited mobility in PtSe$_2$ reaches about 3000 cm$^2$V$^{-1}$s$^{-1}$ at room temperature which is the highest among the compounds. The bandgap under the local density approximation is 1.25 eV. Our results can be a guide for experiments to search for better two-dimensional materials for future semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Separating Inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection direction changes the ISHE voltage signal, while SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range, and has the flexibility of sample preparation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Prediction of magnetic moment collapse in ZrFe$_2$ under hydrostatic pressure

Electronic structure and magnetic properties of ZrFe$_2$ with a cubic Laves phase are investigated by calculations based on the density functional theory. The total magnetic moment (m) of 3.14 $μ_B$ per formula unit (\emph{f.u.}) is obtained at the experimental lattice constant (7.06 Å), which is larger than 3.06 $μ_B$/\emph{f.u.} obtained at the theoretical equilibrium lattice constant (6.85 Å). The localized $3d$ magnetic moment is in negative diffusive sp background moment. We predict a two-step magnetic collapse under pressure: one is from 3.06 $μ_B$/\emph{f.u.} to 1.26 $μ_B$/\emph{f.u.} at about 3.6 GPa, and the other is from 0.5 $μ_B$/\emph{f.u.} to nonmagnetic state at about 15 GPa. We understand this process by the changes of density of states. The magnetic moment decreases under the pressure in the vicinity of the experimental lattice constant with $d\ln m/dp=-0.038$ GPa$^{-1}$. The spontaneous volume magnetostriction is 0.015. We suggest that the Invar effect of this alloy may be understood when considering the magnetic moment variation according to the Weiss $2γ$-model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two dimensional semiconductors with possible high room temperature mobility

We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX$_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. We found that out of the 14 compounds, MoTe$_2$, HfSe$_2$ and HfTe$_2$, are promising regarding to the possible high mobility and finite band gap. The phonon limited mobility can be above 2500 cm$^2$V$^{-1}$s$^{-1}$ at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Comment on "First-principles studies on magnetic properties of rocksalt structure $M$C ($M$=Ca,Sr, and Ba) under pressure"[Appl. Phys. Lett. 98,182501(2011)]

In this comment on 'First-principles studies on magnetic properties of rocksalt structure MC(M=Ca, Sr, and Ba) under pressure'[Appl. Phys. Lett. 98, 182501 (2011)]" we found that their results of the original paper are from nonconverged calculation with respect to the k-point mesh, because they used too few k-points. This gives meaningless results presented in Fig. 1, 2 and 3 in the paper. We recalculated the correpsonding curves.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic structure and magnetism in M(=IA, IIA)C compounds with the rocksalt structure

Electronic structures of MC where M is the alkali and alkaline earth metals with the rocksalt structure are calculated by full potential density functional codes. We find that the spin magnetic moment in the compounds is mainly contributed by the spin polarized p-orbitals of carbon. The large distance between the carbon makes the p-orbitals localized, which induces magnetic instability according to the Stoner criterion. The electronic structure can be mapped to the rigid band model. SrC, BaC and RaC are half-metals, while KC, RbC and CsC are magnetic semiconductors

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tune of Magnetism and Electronic Structures of Alkali Metal Carbides with Rocksalt Structure

Electronic structures of carbides with the rocksalt structure were calculated by full potential electronic codes solving the Kohn-Sham equation. Bonding characters were analyzed by constructing tight-binding Hamiltonian based on maximally-localized Wannier functions. It was found that the cations in these compounds act as an electron provider and the frame is formed by the carbon atoms. The electronic states in the vicinity of the Fermi level are mainly from the p-orbitals of C. Pressure and doping are two efficient ways to tune the magnetic and electronic properties of these compounds. It turns out that a spin gapless semiconductor can be obtained by applying hydrostatic pressure up to tens of gigaPascal. Higher pressure induced an insulator to metal transition because of band broadening. Compounds of IA group (Na, K, Rb, Cs) were magnetic semiconductor at ambient conditions. Alloying with IIA elements decrease the magnetic moment according to the law of $3-x$, where $x$ is the relative atomic ratio of the IIA elements to the IA ones. The behaviors of the compounds under the pressure and the doping effects can be understood by a rigid band model.

0 citations0 reviewsNo code linkedOpen access