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Wanli Zhang

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

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cond-mat.mtrl-scicond-mat.mes-hall

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15 publications

preprint2021arXiv

Spin Hall Conductivity and Anomalous Hall Conductivity in Full Heusler compounds

The spin Hall conductivity (SHC) and anomalous Hall conductivity (AHC) in more than 120 full Heusler compounds are calculated using density functional theory in a high-throughtput way. The electronic structures are mapped to the Wannier basis and the linear response theory is used to get the conductivity. Our results show that the mechanism under the SHC or AHC cannot be simply related to the valence electron numbers or atomic weights, is related to the very details of the electronic structure, which can only be obtained by calculations. A high throughput calculation is efficient to screen out the desired materials. According to our present results, Cu2CoSn, as well as Co2MnAl and Co2MnGa are candidates in spintronic materials regarding to their high SHC and AHC values, which can benefit the spin-torque-driven nanodevices.

Open access
preprint2020arXiv

Dependence of the Inverse Spin Hall Effect in Sr(Nbx_xTi1−x_{1-x})O3_3 on the Nb concentration

We measured the spin rectify effect and the inverse spin Hall effect in Nb-doped SrTiO3_3 by injecting the spins from ferromagnetic thin films to SrTiO3_3 using spin pumping. It was shown that the spin injection is increased when the doping level is increased. However, the spin Hall angle decreases when Nb occupies more than ∼\sim2\% of the Ti sites, which is due to that beyond this concentration, the electron contributed the spin Hall effect is from the d−d-orbitals of Nb instead those from the Ti. Our work points to the importance of orbital occupations in the (inverse) spin Hall effect. We may explore controllable spin and charge interconversion in oxide spintronics.

Open access
preprint2019arXiv

Tunning Spin Hall conductivities in GeTe by Ferroelectric Polarization

Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We demonstrated that the spin Hall conductivity (SHC) can be further tuned by ferroelectricity based on the density functional theory calculations. The spin texture variation driven by the electric fields was elucidated from the symmetry point of view, highlighting the interlocked spin and orbital degrees of freedom. We observed that the origin of SHC can be attributed to the Rashba effect and the intrinsic spin-orbit coupling. The magnitude of one component of SHC σ_xy^z can reach as large as 100 {\hbar}/e/(Ωcm) in the vicinity of the band edge, which is promising for engineering spintronic devices. Our work on tunable spin transport properties via the ferroelectric polarization brings novel assets into the field of spintronics.

Open access
preprint2016arXiv

Spin galvanic effect at the conducting SrTiO3 surfaces

The (001) surface of SrTiO3 were transformed from insulating to conducting after Ar+ irradiation, producing a quasi two-dimensional electron gas (2DEG). This conducting surface layer can introduce Rashba spin orbital coupling due to the broken inversion symmetry normal to the plane. The spin splitting of such a surface has recently been demonstrated by magneto-resistance and angular resolved photoemission spectra measurements. Here we present experiments evidencing a large spin-charge conversion at the surface. We use spin pumping to inject a spin current from NiFe film into the surface, and measure the resulting charge current. The results indicate that the Rashba effect at the surface can be used for efficient charge-spin conversion, and the large efficiency is due to the multi-d-orbitals and surface corrugation. It holds great promise in oxide spintronics.

Open access
preprint2015arXiv

Collapse of the magnetic moment under pressure of AFe2_2 (A = Y, Zr, Lu and Hf) in the cubic Laves phase

The electronic structures of four Laves phase iron compounds (e.g. YFe2_2, ZrFe2_2, LuFe2_2 and HfFe2_2) have been calculated by the state-of-the-art full potential electronic structure code. The magnetic moments collapse under hydrostatic pressure. This feature is found to be universal in these materials. Its electronic origin is provided by the sharp peaks in the density of states near the Fermi level. It is shown that a first order quantum phase transition can be expected under pressure in Y(Zr, or Lu)Fe2_2, while a second order one in HfFe2_2. The bonding characteristics are discussed to elucidate the equilibrium lattice constant variation. The large spontaneous volume magnetostriction gives one of the most important character of these compounds. Invar anomalies in these compounds can be partly explained by the current work when the fast continuous magnetic moment decrease at the decrease of the lattice constant was properly considered. This work may remind the experimentalists of these "old" compounds and exploration of the quantum properties under high pressures are greatly encouraged.

Open access
preprint2015arXiv

Screening for Two dimensional MX2_2 semiconductors with possible high room temperature mobility

We calculated the electron mobility of 14 two dimensional semiconductors with composition of MX2_2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. Long wave longitudinal acoustical and optical phonon scatterings are included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WSe2_2, PtS2_2 and PtSe2_2, are promising regarding to the possible high electron mobility and finite band gap. The phonon limited mobility in PtSe2_2 reaches about 3000 cm2^2V−1^{-1}s−1^{-1} at room temperature which is the highest among the compounds. The bandgap under the local density approximation is 1.25 eV. Our results can be a guide for experiments to search for better two-dimensional materials for future semiconductor devices.

Open access
preprint2015arXiv

Separating Inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection direction changes the ISHE voltage signal, while SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range, and has the flexibility of sample preparation.

Open access
preprint2014arXiv

Prediction of magnetic moment collapse in ZrFe2_2 under hydrostatic pressure

Electronic structure and magnetic properties of ZrFe2_2 with a cubic Laves phase are investigated by calculations based on the density functional theory. The total magnetic moment (m) of 3.14 μBμ_B per formula unit (\emph{f.u.}) is obtained at the experimental lattice constant (7.06 Å), which is larger than 3.06 μBμ_B/\emph{f.u.} obtained at the theoretical equilibrium lattice constant (6.85 Å). The localized 3d3d magnetic moment is in negative diffusive sp background moment. We predict a two-step magnetic collapse under pressure: one is from 3.06 μBμ_B/\emph{f.u.} to 1.26 μBμ_B/\emph{f.u.} at about 3.6 GPa, and the other is from 0.5 μBμ_B/\emph{f.u.} to nonmagnetic state at about 15 GPa. We understand this process by the changes of density of states. The magnetic moment decreases under the pressure in the vicinity of the experimental lattice constant with dln⁡m/dp=−0.038d\ln m/dp=-0.038 GPa−1^{-1}. The spontaneous volume magnetostriction is 0.015. We suggest that the Invar effect of this alloy may be understood when considering the magnetic moment variation according to the Weiss 2γ2γ-model.

Open access
preprint2014arXiv

Two dimensional semiconductors with possible high room temperature mobility

We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX2_2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. We found that out of the 14 compounds, MoTe2_2, HfSe2_2 and HfTe2_2, are promising regarding to the possible high mobility and finite band gap. The phonon limited mobility can be above 2500 cm2^2V−1^{-1}s−1^{-1} at room temperature.

Open access
preprint2012arXiv

Comment on "First-principles studies on magnetic properties of rocksalt structure MMC (MM=Ca,Sr, and Ba) under pressure"[Appl. Phys. Lett. 98,182501(2011)]

In this comment on 'First-principles studies on magnetic properties of rocksalt structure MC(M=Ca, Sr, and Ba) under pressure'[Appl. Phys. Lett. 98, 182501 (2011)]" we found that their results of the original paper are from nonconverged calculation with respect to the k-point mesh, because they used too few k-points. This gives meaningless results presented in Fig. 1, 2 and 3 in the paper. We recalculated the correpsonding curves.

Open access
preprint2012arXiv

Electronic structure and magnetism in M(=IA, IIA)C compounds with the rocksalt structure

Electronic structures of MC where M is the alkali and alkaline earth metals with the rocksalt structure are calculated by full potential density functional codes. We find that the spin magnetic moment in the compounds is mainly contributed by the spin polarized p-orbitals of carbon. The large distance between the carbon makes the p-orbitals localized, which induces magnetic instability according to the Stoner criterion. The electronic structure can be mapped to the rigid band model. SrC, BaC and RaC are half-metals, while KC, RbC and CsC are magnetic semiconductors

Open access
preprint2012arXiv

Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.

Open access
preprint2012arXiv

Substrate effect on the resistive switching in BiFeO3 thin films

BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.

Open access
preprint2012arXiv

Tune of Magnetism and Electronic Structures of Alkali Metal Carbides with Rocksalt Structure

Electronic structures of carbides with the rocksalt structure were calculated by full potential electronic codes solving the Kohn-Sham equation. Bonding characters were analyzed by constructing tight-binding Hamiltonian based on maximally-localized Wannier functions. It was found that the cations in these compounds act as an electron provider and the frame is formed by the carbon atoms. The electronic states in the vicinity of the Fermi level are mainly from the p-orbitals of C. Pressure and doping are two efficient ways to tune the magnetic and electronic properties of these compounds. It turns out that a spin gapless semiconductor can be obtained by applying hydrostatic pressure up to tens of gigaPascal. Higher pressure induced an insulator to metal transition because of band broadening. Compounds of IA group (Na, K, Rb, Cs) were magnetic semiconductor at ambient conditions. Alloying with IIA elements decrease the magnetic moment according to the law of 3−x3-x, where xx is the relative atomic ratio of the IIA elements to the IA ones. The behaviors of the compounds under the pressure and the doping effects can be understood by a rigid band model.

Open access
preprint2011arXiv

Control of rectifying and resistive switching behavior in BiFeO3 thin films

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.

Open access

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