Researcher profile

Wenkai Zhu

Wenkai Zhu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

The RoboSense Challenge: Sense Anything, Navigate Anywhere, Adapt Across Platforms

Autonomous systems are increasingly deployed in open and dynamic environments -- from city streets to aerial and indoor spaces -- where perception models must remain reliable under sensor noise, environmental variation, and platform shifts. However, even state-of-the-art methods often degrade under unseen conditions, highlighting the need for robust and generalizable robot sensing. The RoboSense 2025 Challenge is designed to advance robustness and adaptability in robot perception across diverse sensing scenarios. It unifies five complementary research tracks spanning language-grounded decision making, socially compliant navigation, sensor configuration generalization, cross-view and cross-modal correspondence, and cross-platform 3D perception. Together, these tasks form a comprehensive benchmark for evaluating real-world sensing reliability under domain shifts, sensor failures, and platform discrepancies. RoboSense 2025 provides standardized datasets, baseline models, and unified evaluation protocols, enabling large-scale and reproducible comparison of robust perception methods. The challenge attracted 143 teams from 85 institutions across 16 countries, reflecting broad community engagement. By consolidating insights from 23 winning solutions, this report highlights emerging methodological trends, shared design principles, and open challenges across all tracks, marking a step toward building robots that can sense reliably, act robustly, and adapt across platforms in real-world environments.

preprint2020arXiv

Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Amongst two-dimensional (2D) vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. Here, we demonstrate TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics: forward rectifying, Zener-tunneling and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ~ 0.2V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.