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Source author record

Wengang Luo

Wengang Luo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

3 published item(s)

preprint2016arXiv

Towards Fast Multicolor Photodetectors based on Graphene Contacted Vertical p-GaSe/n-InSe van der Waals Heterostructure

We investigated the electronic and optoelectronic properties of vertical van der Waals heterostructure photodetectors using layered p type GaSe and n type InSe, with graphene as the transparent electrodes. Not only the photocurrent peaks from the layered GaSe and InSe themselves were observed, also the interlayer optical transition peak was observed, which is consistent with the first-principles calculation. The built-in electric field between p-n heterojunction and the advantage of the graphene electrodes can effectively separate the photo-induced electron-hole pairs, and thus lead to the response time down to 160 μs. Making use of the interlayer as well as intralayer optical transitions of the vertical layered p-n heterostructure and graphene electrodes, we could achieve high performance multi-color photodetectors based on two-dimensional layered materials, which will be important for future optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Charge Trap Memory Based on Few-Layered Black Phosphorus

Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications in flexible and transparent electronic devices . Here, for the first time we show non-volatile chargetrap memory devices, based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3 /HfO2 /Al2O3 charge-trap gate stack. An unprecedented memory window exceeding 12 V is observed, due to the extraordinary trapping ability of HfO2. The device shows a high endurance and a stable retention of ?25% charge loss after 10 years, even drastically lower than reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards the flexible and transparent memory devices utilising atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.

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preprint2015arXiv

Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes

In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 μs, which is about 40 times faster than that of our InSe/metal device. And it can also be tuned by the back-gate voltage from 310 μs down to 100 μs. With high response speed, the photoresponsivity can reach as high as 60 AW-1 simultaneously. Meanwhile the InSe/graphene photodetectors possess a broad spectral range at 400-1000 nm. The design of 2D crystal/graphene electrical contacts could be important for high performance optoelectronic devices.

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