BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Weng W. Chow

Weng W. Chow contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticscond-mat.mtrl-scicond-mat.quant-gasphysics.app-phphysics.atom-phquant-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
9works
0followers
7topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2024arXiv

Turnkey locking of quantum-dot lasers directly grown on Si

Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL) have reached fiber laser coherence, but typically require a high-Q external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking (ECL) are a low-cost and turnkey operation option, but their coherence is generally inferior to SIL lasers. In this work, we demonstrate quantum-dot (QD) lasers grown directly on Si that achieve SIL laser coherence under turnkey ECL. The high-performance QD laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the QD laser's chaos-free nature enables a 16 Hz Lorentzian linewidth under ECL using a low-Q external cavity, and improves the frequency noise by an additional order of magnitude compared to conventional quantum-well lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Numerical model for atomtronic circuit analysis

A model for studying atomtronic devices and circuits based on finite temperature Bose-condensed gases is presented. The approach involves numerically solving equations of motion for atomic populations and coherences, derived using the Bose-Hubbard Hamiltonian and the Heisenberg picture. The resulting cluster expansion is truncated at a level giving balance between physics rigor and numerical demand mitigation. This approach allows parametric studies involving time scales that cover both the rapid population dynamics relevant to non-equilibrium state evolution, as well as the much longer time durations typical for reaching steady-state device operation. The model is demonstrated by studying the evolution of a Bose-condensed gas in the presence of atom injection and extraction in a double-well potential. In this configuration phase-locking between condensates in each well of the potential is readily observed, and its influence on the evolution of the system is studied.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Solid state based analog of optomechanics

We investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show, that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction processes, which in the optomechanical case is the radiation pressure coupling and in the semiconductor case the electron-phonon coupling. In optomechanics, phonons are typically induced via confined photons, acting on a movable mirror, while in the semiconductor system the phonons are emitted by the laser-driven electronic system. There are analogous effects present for both systems, featuring bistabilities, optically induced phonon lasing and enhanced phonon loss. Nonetheless, the different statistical nature of the optical cavity and the electronic system also leads to qualitative differences.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Group-velocity slowdown in a double quantum-dot molecule

The slowdown of optical pulses due to quantum-coherence effects is investigated theoretically for an "active material" consisting of InGaAs-based double quantum-dot molecules. These are designed to exhibit a long lived coherence between two electronic levels, which is an essential part of a quantum coherence scheme that makes use of electromagnetically-induced transparency effects to achieve group velocity slowdown. We apply a many-particle approach based on realistic semiconductor parameters that allows us to calculate the quantum-dot material dynamics including microscopic carrier scattering and polarisation dephasing dynamics. The group-velocity reduction is characterized in the frequency domain by a quasi-equilibrium slow-down factor and in the time domain by the probe-pulse slowdown obtained from a calculation of the spatio-temporal material dynamics coupled to the propagating optical field. The group-velocity slowdown in the quantum-dot molecule is shown to be substantially higher than what is achievable from similar transitions in typical InGaAs-based single quantum dots. The dependences of slowdown and shape of the propagating probe pulses on lattice temperature and drive intensities are investigated.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Group-velocity slowdown in quantum-dots and quantum-dot molecules

We investigate theoretically the slowdown of optical pulses due to quantum-coherence effects in InGaAs-based quantum dots and quantum dot molecules. Simple models for the electronic structure of quantum dots and, in particular, quantum-dot molecules are described and calibrated using numerical simulations. It is shown how these models can be used to design optimized quantum-dot molecules for quantum coherence applications. The wave functions and energies obtained from the optimizations are used as input for a microscopic calculation of the quantum-dot material dynamics including carrier scattering and polarization dephasing. The achievable group velocity slowdown in quantum-coherence V schemes consisting of quantum-dot molecule states is shown to be substantially higher than what is achievable from similar transitions in typical InGaAs-based single quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Microscopic model for intersubband gain from electrically pumped quantum-dot structures

We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-IR range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasi-equilibrium conditions and current injection. Comparing different structures we find that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, that make the available scattering pathways through the quantum dot active region too fast to sustain inversion. The tradeoff between different extraction/injection pathways is discussed. Comparing the modal gain to a standard quantum-well structure as used in quantum cascade lasers, our calculations predict reduced threshold current densities of the quantum dot structure for comparable modal gain. Such a comparable modal gain can, however, only be achieved for an inhomogeneous broadening of a quantum-dot ensemble that is close to the lower limit achievable today using self-organized growth.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k.p equations in the envelop approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Failure of the α-factor in describing QD laser dynamical instabilities and chaos

We show that the long-established concept of a linewidth-enhancement factor αto describe carrier-induced refractive index changes in semiconductor lasers breaks down in quantum dot (QD) lasers when describing complex dynamic scenarios, found for example under high-excitation or optical injection. By comparing laser simulations using a constant α-factor with results from a more complex non-equilibrium model that separately treats gain and refractive index dynamics, we examine the conditions under which an approximation of the amplitude-phase coupling by an α-factor becomes invalid. The investigations show that while a quasi-equilibrium approach for conventional quantum well lasers is valid over a reasonable parameter range, allowing one to introduce an α-factor as a constant parameter, the concept is in general not applicable to predict QD laser dynamics due to the different timescales of the involved scattering processes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency

Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

0 citations0 reviewsNo code linkedOpen access