Source author record

Wencai Ren

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

Catalog footprint

Research overview

3works
3topics
4close collaborators

Published work

3 publications

preprint2022arXiv

A Ta-TaS2 monolithic catalyst with robust and metallic interface for superior hydrogen evolution

The use of highly active and robust catalysts is crucial for producing green hydrogen by water electrolysis as we strive to achieve global carbon neutrality. Noble metals like platinum are currently used in industry for the hydrogen evolution reaction (HER), but suffer from scarcity, high price and unsatisfied performance and stability at large current density, restricting their large scale implementations. Here we report the synthesis of a new type of monolithic catalyst (MC) consisting of a metal disulfide (e.g., TaS2) catalyst vertically bonded to a conductive substrate of the same metal by strong covalent bonds. These features give the MC a mechanically robust and electrically near zero resistance interface, leading to an outstanding HER performance including rapid charge transfer and excellent durability, together with a low overpotential of 398 mV to achieve a current density of 2,000 mA cm-2 as required by industry. The Ta TaS2 MC has a negligible performance decay after 200 h operation at large current densities. In light of its unique interface and the various choice of metal elements giving the same structure, such monolithic materials may have broad uses besides catalysis.

preprint2020arXiv

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

preprint2020arXiv

Structure-driven intercalated architecture of septuple-atomic-layer MA2Z4MA_2Z_4 family with diverse properties from semiconductor to topological insulator to Ising superconductor

Motivated by the fact that septuple-atomic-layer MnBi2_2Te4_4 can be structurally viewed as the combination of double-atomic-layer MnTe intercalating into quintuple-atomic-layer Bi2_2Te3_3, we present a general approach of constructing twelve septuple-atomic-layer αiα_i- and βiβ_i-MA2Z4MA_2Z_4 monolayer family (\emph{i} = 1 to 6) by intercalating MoS2_2-type MZMZ2_2 monolayer into InSe-type A2_2Z2_2 monolayer. Besides reproducing the experimentally synthesized α1α_1-MoSi2_2N4_4, α1α_1-WSi2_2N4_4 and β5β_5-MnBi2_2Te4_4 monolayer materials, another 66 thermodynamically and dynamically stable MA2Z4MA_2Z_4 were predicted, which span a wide range of properties upon the number of valence electrons (VEC). MA2Z4MA_2Z_4 with the rules of 32 or 34 VEC are mostly semiconductors with direct or indirect band gap and, however, with 33 VEC are generally metal, half-metal ferromagnetism, or spin-gapless semiconductor upon whether or not an unpaired electron is spin polarized. Moreover, we propose α2α_2-WSi2_2P4_4 for the spin-valley polarization, α1α_1-TaSi2_2N4_4 for Ising superconductor and β2β_2-SrGa2_2Se4_4 for topological insulator.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.