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Researcher profile

Wencai Ren

Wencai Ren contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

A Ta-TaS2 monolithic catalyst with robust and metallic interface for superior hydrogen evolution

The use of highly active and robust catalysts is crucial for producing green hydrogen by water electrolysis as we strive to achieve global carbon neutrality. Noble metals like platinum are currently used in industry for the hydrogen evolution reaction (HER), but suffer from scarcity, high price and unsatisfied performance and stability at large current density, restricting their large scale implementations. Here we report the synthesis of a new type of monolithic catalyst (MC) consisting of a metal disulfide (e.g., TaS2) catalyst vertically bonded to a conductive substrate of the same metal by strong covalent bonds. These features give the MC a mechanically robust and electrically near zero resistance interface, leading to an outstanding HER performance including rapid charge transfer and excellent durability, together with a low overpotential of 398 mV to achieve a current density of 2,000 mA cm-2 as required by industry. The Ta TaS2 MC has a negligible performance decay after 200 h operation at large current densities. In light of its unique interface and the various choice of metal elements giving the same structure, such monolithic materials may have broad uses besides catalysis.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structure-driven intercalated architecture of septuple-atomic-layer $MA_2Z_4$ family with diverse properties from semiconductor to topological insulator to Ising superconductor

Motivated by the fact that septuple-atomic-layer MnBi$_2$Te$_4$ can be structurally viewed as the combination of double-atomic-layer MnTe intercalating into quintuple-atomic-layer Bi$_2$Te$_3$, we present a general approach of constructing twelve septuple-atomic-layer $α_i$- and $β_i$-$MA_2Z_4$ monolayer family (\emph{i} = 1 to 6) by intercalating MoS$_2$-type $MZ$$_2$ monolayer into InSe-type A$_2$Z$_2$ monolayer. Besides reproducing the experimentally synthesized $α_1$-MoSi$_2$N$_4$, $α_1$-WSi$_2$N$_4$ and $β_5$-MnBi$_2$Te$_4$ monolayer materials, another 66 thermodynamically and dynamically stable $MA_2Z_4$ were predicted, which span a wide range of properties upon the number of valence electrons (VEC). $MA_2Z_4$ with the rules of 32 or 34 VEC are mostly semiconductors with direct or indirect band gap and, however, with 33 VEC are generally metal, half-metal ferromagnetism, or spin-gapless semiconductor upon whether or not an unpaired electron is spin polarized. Moreover, we propose $α_2$-WSi$_2$P$_4$ for the spin-valley polarization, $α_1$-TaSi$_2$N$_4$ for Ising superconductor and $β_2$-SrGa$_2$Se$_4$ for topological insulator.

0 citations0 reviewsNo code linkedOpen access