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Wen-Sen Lu

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5 publications

preprint2021arXiv

Phase Diffusion in Low-EJE_J Josephson Junctions at milli-Kelvin Temperatures

Josephson junctions (JJs) with Josephson energy EJ≲1KE_J \lesssim 1K are widely employed as non-linear elements in superconducting circuits for quantum computing, operating at milli-Kelvin temperatures. Here we experimentally study incoherent phase slips (IPS) in low-EJE_J Aluminum-based JJs at T<0.2KT<0.2K, where the IPS become the dominant source of dissipation. We observed strong suppression of the critical (switching) current and a very rapid growth of the zero-bias resistance with decreasing Josephson energy below EJ∼1KE_J \sim 1K. This behavior is attributed to the IPSs whose rate exponentially increases with decreasing the ratio EJ/TE_J/T. Our observations are in line with other data reported in literature. With further improvement of coherence of superconducting qubits, the observed dissipation from IPS might limit the performance of qubits based on low-EJE_J junctions.

preprint2020arXiv

Granular Aluminum Meandered Superinductors for Quantum Circuits

We have designed superinductors made of strongly disordered superconductors for implementation in "hybrid" superconducting quantum circuits. The superinductors have been fabricated as meandered nanowires made of granular Aluminum films. Optimization of the device geometry enabled realization of superinductors with the inductance ∼1μH\sim 1 μH and the self-resonance frequency over 3 GHz. These compact superinductors are attractive for a wide range of applications, from superconducting circuits for quantum computing to microwave elements of cryogenic parametric amplifiers and kinetic-inductance photon detectors.

preprint2019arXiv

Bifluxon: Fluxon-Parity-Protected Superconducting Qubit

We have developed and characterized a symmetry-protected superconducting qubit that offers simultaneous exponential suppression of energy decay from charge and flux noise, and dephasing from flux noise. The qubit consists of a Cooper-pair box (CPB) shunted by a superinductor, thus forming a superconducting loop. Provided the offset charge on the CPB island is an odd number of electrons, the qubit potential corresponds to that of a cos⁡ϕ/2\cos ϕ/ 2 Josephson element, preserving the parity of fluxons in the loop via Aharonov-Casher interference. In this regime, the logical-state wavefunctions reside in disjoint regions of phase space, thereby ensuring the protection against energy decay. By switching the protection on, we observed a ten-fold increase of the decay time, reaching up to 100μs100 μ\mathrm{s}. Though the qubit is sensitive to charge noise, the sensitivity is much reduced in comparison with the charge qubit, and the charge-noise-induced dephasing time of the current device exceeds 1μs1 μ\mathrm{s}. Implementation of the full dephasing protection can be achieved in the next-generation devices by combining several cos⁡ϕ/2\cos ϕ/ 2 Josephson elements in a small array.

preprint2011arXiv

Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene

Thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful for many industrial applications, such as the heat-to-electricity conversion and the thermoelectric cooling device. Here we show a full electric field tuning of thermoelectric power in a dual-gated bilayer graphene device resulting from the opening of a band-gap by applying a perpendicular electric field on bilayer graphene. We uncover a large enhancement in thermoelectric power at low temperature, which may open up a new possibility in low temperature thermoelectric application using graphene-based device.

preprint2010arXiv

Transverse Thermoelectric Conductivity of Bilayer Graphene in Quantum Hall Regime

We performed electric and thermoelectric transport measurements of bilayer graphene in a magnetic field up to 15 Tesla. The transverse thermoelectric conductivity αxy\rmα_{xy}, determined from four transport coefficients, attains a peak value of αxy,peak\rmα_{xy, peak} whenever chemical potential lies in the center of a Landau level. The temperature dependence of αxy,peak\rmα_{xy, peak} is dictated by the disorder width WL\rm W_L. For kBT/WL≤\rm k_BT/W_L\leq0.2, αxy,peak\rmα_{xy, peak} is nominally linear in temperature, which gives αxy,peak/T=0.19±0.03nA/K2\rmα_{xy,peak}/T=0.19 \pm 0.03 n A/K^2 independent of the magnetic field, temperature and Landau Level index. At kBT/WL≥\rm k_BT/W_L\geq0.5, αxy,peak\rmα_{xy, peak} saturates to a value close to the predicted universal value of 4×(ln2)kBe/h\rm 4\times(ln2)k_Be/h according to the theory of Girvin and Jonson. We remark that an anomaly is found in αxy\rmα_{xy} near the charge neutral point, similar to that in single-layer graphene

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