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Chang-Ran Wang

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2013arXiv

Magneto-transport in copper-doped noncentrosymmetric BiTeI

BiTeI exhibits large Rashba spin splitting due to its noncentrosymmetric crystal structure. The study of chemical doping effect is important in order to either tune the Fermi level or refine the crystal quality. Here, we report the magneto-transport measurement in high quality BiTeI single crystals with different copper dopings. We found that a small amount of copper doping improves the crystal quality significantly, which is supported by the transport data showing higher Hall mobility and larger amplitude in Shubnikov-de Haas oscillation at low temperature. Two distinct frequencies in Shubnikov-de Haas oscillation were observed giving extremal Fermi surface areas of $A_{S} = 9.1 \times 10^{12}$ cm $^{-2}$ and $A_{L} = 3.47\times 10^{14}$ cm $^{-2}$ with corresponding cyclotron masses $m_S^*$ = 0.0353 $m_e$ and $m_L^*$ = 0.178 $m_e$ , respectively. Those results are further compared with relativistic band structure calculations using three reported Te and I refined or calculated positions. Our analysis infers the crucial role of Bi-Te bond length in the observed large bulk Rashba-type spin splitting effect in BiTeI.

preprint2011arXiv

Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene

Thermoelectric power of a material, typically governed by its band structure and carrier density, can be varied by chemical doping that is often restricted by solubility of the dopant. Materials showing large thermoelectric power are useful for many industrial applications, such as the heat-to-electricity conversion and the thermoelectric cooling device. Here we show a full electric field tuning of thermoelectric power in a dual-gated bilayer graphene device resulting from the opening of a band-gap by applying a perpendicular electric field on bilayer graphene. We uncover a large enhancement in thermoelectric power at low temperature, which may open up a new possibility in low temperature thermoelectric application using graphene-based device.

preprint2010arXiv

Transverse Thermoelectric Conductivity of Bilayer Graphene in Quantum Hall Regime

We performed electric and thermoelectric transport measurements of bilayer graphene in a magnetic field up to 15 Tesla. The transverse thermoelectric conductivity $\rmα_{xy}$ , determined from four transport coefficients, attains a peak value of $\rmα_{xy, peak}$ whenever chemical potential lies in the center of a Landau level. The temperature dependence of $\rmα_{xy, peak}$ is dictated by the disorder width $\rm W_L$ . For $\rm k_BT/W_L\leq$ 0.2, $\rmα_{xy, peak}$ is nominally linear in temperature, which gives $\rmα_{xy,peak}/T=0.19 \pm 0.03 n A/K^2$ independent of the magnetic field, temperature and Landau Level index. At $\rm k_BT/W_L\geq$ 0.5, $\rmα_{xy, peak}$ saturates to a value close to the predicted universal value of $\rm 4\times(ln2)k_Be/h$ according to the theory of Girvin and Jonson. We remark that an anomaly is found in $\rmα_{xy}$ near the charge neutral point, similar to that in single-layer graphene

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