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Wen-He Jiao

Wen-He Jiao contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Dirac nodal lines in the quasi-one-dimensional ternary telluride TaPtTe$_5$

A Dirac nodal-line phase, as a quantum state of topological materials, usually occur in three-dimensional or at least two-dimensional materials with sufficient symmetry operations that could protect the Dirac band crossings. Here, we report a combined theoretical and experimental study on the electronic structure of the quasi-one-dimensional ternary telluride TaPtTe$_5$, which is corroborated as being in a robust nodal-line phase with fourfold degeneracy. Our angle-resolved photoemission spectroscopy measurements show that two pairs of linearly dispersive Dirac-like bands exist in a very large energy window, which extend from a binding energy of $\sim$ 0.75 eV to across the Fermi level. The crossing points are at the boundary of Brillouin zone and form Dirac-like nodal lines. Using first-principles calculations, we demonstrate the existing of nodal surfaces on the $k_y = \pm π$ plane in the absence of spin-orbit coupling (SOC), which are protected by nonsymmorphic symmetry in TaPtTe$_5$. When SOC is included, the nodal surfaces are broken into several nodal lines. By theoretical analysis, we conclude that the nodal lines along $Y$-$T$ and the ones connecting the $R$ points are non-trivial and protected by nonsymmorphic symmetry against SOC.

preprint2020arXiv

Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains

We report the synthesis and systematic studies of a new layered ternary telluride TaPdTe5 with quasi-one-dimensional PdTe2 chains. This compound crystalizes in a layered orthorhombic structure with space group Cmcm. Analysis of its curved field-dependent Hall resistivity, using the two-band model, indicates the hole-dominated transport with a high mobility $μ_h$ = 2.38 $\times$ 10$^3$ cm$^2$ V$^{-1}$ s$^{-1}$ at low temperatures. The in-plane magnetoresistance (MR) displays significant anisotropy with field applied along the crystallographic $b$ axis. The MR with the current applied along the $c$-axis is also measured in high magnetic fields up to 51.7 T. Remarkably, it follows a power-law dependence and reaches (9.5 $\times$ 10$^3$)% at 2.1 K without any signature of saturation. The De Haas-van Alphen oscillations show a small Fermi-surface pocket with a nontrivial Berry phase. The Shubnikov-de Haas (SdH) oscillations are detected at low temperatures and under magnetic fields above 28.5 T. Two effective masses $m^*$ (0.26$m_e$ and 0.41$m_e$) are extracted from the oscillatory SdH data. Our first-principles calculations unveil a topological Dirac cone in its surface states, and, in particular, the topological index indicates that TaPdTe$_5$ is a topologically nontrivial material.

preprint2013arXiv

Superconductivity, charge- or spin-density wave, and metal-nonmetal transition in BaTi$_{2}$(Sb$_{1-x}$Bi$_{x}$)$_{2}$O

We have performed an isovalent substitution study in a layered titanium oxypnictide system BaTi$_{2}$(Sb$_{1-x}$Bi$_{x}$)$_{2}$O (0$\leq x\leq$ 0.40) by the measurements of x-ray diffraction, electrical resistivity and magnetic susceptibility. The parent compound BaTi$_{2}$Sb$_{2}$O is confirmed to exhibit superconductivity at 1.5 K as well as charge- or spin-density wave (CDW/SDW) ordering below 55 K. With the partial substitution of Sb by Bi, the lattice parameters $a$, $c$ and $c/a$ all increase monotonically, indicating negative chemical pressure and lattice distortion on the (super)conducting Ti$_2$Sb$_2$O-layers. The Bi doping elevates the superconducting transition temperature to its maximum $T_c$=3.7 K at $x=$0.17, and then $T_c$ decreases gradually with additional Bi doping. A metal-to-nonmetal transition takes place around $x$=0.3, and superconductivity at $\sim$1K exists at the nonmetal side. The CDW/SDW anomaly, in comparison, is rapidly suppressed by the Bi doping, and vanishes for $x\geq$0.17. The results are discussed in terms of negative chemical pressure and disorder effect.

preprint2012arXiv

Novel weak-ferromagnetic metallic state in heavily doped Ba$_{1-x}$K$_{x}$Mn$_{2}$As$_{2}$

Heavily doped Ba$_{1-x}$K$_{x}$Mn$_{2}$As$_{2}$ ($x$=0.19 and 0.26) single crystals were successfully grown, and investigated by the measurements of resistivity and anisotropic magnetic susceptibility. In contrast to the antiferromagnetic insulating ground state of the undoped BaMn$_{2}$As$_{2}$, the K-doped crystals show metallic conduction with weak ferromagnetism below $\sim$50 K and Curie-Weiss-like in-plane magnetic susceptibility above $\sim$50 K. Under high pressures up to 6 GPa, the low-temperature metallicity changes into a state characterized by a Kondo-like resistivity minimum without any signature of superconductivity above 2.5 K. Electronic structure calculations for $x$=0.25 using $2\times2\times1$ supercell reproduce the hole-doped metallic state. The density of states at Fermi energy have significant As 4$p$ components, suggesting that the 4$p$ holes are mainly responsible for the metallic conduction. Our results suggest that the interplay between itinerant 4$p$ holes and local 3$d$ moments is mostly responsible for the novel metallic state.