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Weiyi Xia

Weiyi Xia contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Dynamically Adjusting Case Reporting Policy to Maximize Privacy and Utility in the Face of a Pandemic

Supporting public health research and the public's situational awareness during a pandemic requires continuous dissemination of infectious disease surveillance data. Legislation, such as the Health Insurance Portability and Accountability Act of 1996 (HIPAA) and recent state-level regulations, permits sharing de-identified person-level data; however, current de-identification approaches are limited. namely, they are inefficient, relying on retrospective disclosure risk assessments, and do not flex with changes in infection rates or population demographics over time. In this paper, we introduce a framework to dynamically adapt de-identification for near-real time sharing of person-level surveillance data. The framework leverages a simulation mechanism, capable of application at any geographic level, to forecast the re-identification risk of sharing the data under a wide range of generalization policies. The estimates inform weekly, prospective policy selection to maintain the proportion of records corresponding to a group size less than 11 (PK11) at or below 0.1. Fixing the policy at the start of each week facilitates timely dataset updates and supports sharing granular date information. We use August 2020 through October 2021 case data from Johns Hopkins University and the Centers for Disease Control and Prevention to demonstrate the framework's effectiveness in maintaining the PK!1 threshold of 0.01. When sharing COVID-19 county-level case data across all US counties, the framework's approach meets the threshold for 96.2% of daily data releases, while a policy based on current de-identification techniques meets the threshold for 32.3%. Periodically adapting the data publication policies preserves privacy while enhancing public health utility through timely updates and sharing epidemiologically critical features.

preprint2022arXiv

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

The electronic structure of two-dimensional (2D) materials are inherently prone to environmental perturbations, which may pose significant challenges to their applications in electronic or optoelectronic devices. A 2D material couples with its environment through two mechanisms: local chemical coupling and nonlocal dielectric screening effects. The local chemical coupling is often difficult to predict or control experimentally. Nonlocal dielectric screening, on the other hand, can be tuned by choosing the substrates or layer thickness in a controllable manner. Therefore, a compelling 2D electronic material should offer band edge states that are robust against local chemical coupling effects. Here it is demonstrated that the recently synthesized MoSi$_2$N$_4$ is an ideal 2D semiconductor with robust band edge states protected from capricious environmental chemical coupling effects. Detailed many-body perturbation theory calculations are carried out to illustrate how the band edge states of MoSi$_2$N$_4$ are shielded from the direct chemical coupling effects, but its quasiparticle and excitonic properties can be modulated through the nonlocal dielectric screening effects. This unique property, together with the moderate band gap and the thermodynamic and mechanical stability of this material, paves the way for a range of applications of MoSi$_2$N$_4$ in areas including energy, 2D electronics, and optoelectronics.

preprint2020arXiv

Combined sub-sampling and analytical integration for efficient large-scale $GW$ calculations for 2D systems

Accurate and efficient predictions of the quasiparticle properties of complex materials remain a major challenge due to the convergence issue and the unfavorable scaling of the computational cost with respect to the system size. Quasiparticle $GW$ calculations for two dimensional (2D) materials are especially difficult. The unusual analytical behaviors of the dielectric screening and the electron self-energy of 2D materials make the conventional Brillouin zone (BZ) integration approach rather inefficient and require an extremely dense $k$-grid to properly converge the calculated quasiparticle energies. In this work, we present a combined non-uniform sub-sampling and analytical integration method that can drastically improve the efficiency of the BZ integration in 2D $GW$ calculations. Our work is distinguished from previous work in that, instead of focusing on the intricate dielectric matrix or the screened Coulomb interaction matrix, we exploit the analytical behavior of various terms of the convolved self-energy $Σ(\mathbf{q})$ in the small $\mathbf{q}$ limit. This method, when combined with another accelerated $GW$ method that we developed recently, can drastically speed-up (by over three orders of magnitude) $GW$ calculations for 2D materials. Our method allows fully converged $GW$ calculations for complex 2D systems at a fraction of computational cost, facilitating future high throughput screening of the quasiparticle properties of 2D semiconductors for various applications. To demonstrate the capability and performance of our new method, we have carried out fully converged $GW$ calculations for monolayer C$_2$N, a recently discovered 2D material with a large unit cell, and investigate its quasiparticle band structure in detail.

preprint2020arXiv

Remarkable band gap renormalization via dimensionality of the layered material C3B

Layer-dependent electronic and structural properties of emerging graphitic carbon boron compound C3B are investigated using both density functional theory and the GW approximation. We discover that, in contrast to a moderate quasiparticle band gap of 2.55 eV for monolayer C3B, the calculated quasiparticle band gap of perfectly stacked bulk phase C3B is as small as 0.17 eV. Therefore, our results suggest that layered material C3B exhibits a remarkably large band gap renormalization of over 2.3 eV due to the interlayer coupling and screening effects, providing a single material with an extraordinary band gap tunability. The quasiparticle band gap of monolayer C3B is also over 1.0 eV larger than that of C3N, a closely related two-dimensional semiconductor. Detailed inspections of the near-edge electronic states reveal that the conduction and valence band edges of C3B are formed by out-of-plane and in-plane electronic states, respectively, suggesting an interesting possibility of tuning the band edges of such layered material separately by modulating the in-plane and out-of-plane interactions.