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Weiwei Gao

Weiwei Gao contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Efficient Screening of Organic Singlet Fission Molecules Using Graph Neural Networks

Singlet fission (SF) provides a promising strategy for surpassing the Shockley-Queisser limit in photovoltaics. However, the identification of efficient SF materials is hindered by the limited availability of suitable molecular candidates and the high computational costs associated with conventional quantum-chemical methods for excited states. In this study, we introduce a high-throughput screening framework that integrates a graph neural network (GNN) with multi-level validation to accelerate the discovery of SF-active molecules. Trained on a previously reported FORMED database, the GNN achieves state-of-the-art accuracy in predicting SF-relevant excited-state properties, demonstrating a mean absolute error of about 0.1 eV for S1, T1, and T2 excitation energies. This capability facilitates the efficient screening of over 20 million molecular structures from both OE62 and QO2Mol databases. Our framework significantly reduces the computational demand associated with Time-Dependent Density Functional Theory validation by four orders of magnitude and identifies 180 potential SF molecules along with more than 1000 conformers. Subsequent assessments regarding synthetic accessibility, GW approximation and Bethe-Salpeter equation calculations further highlight a subset of experimentally feasible candidates among these SF candidates. The approach presented herein exemplifies an effective strategy for accelerating the discovery of functional molecules with optoelectronic applications.

preprint2022arXiv

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

The electronic structure of two-dimensional (2D) materials are inherently prone to environmental perturbations, which may pose significant challenges to their applications in electronic or optoelectronic devices. A 2D material couples with its environment through two mechanisms: local chemical coupling and nonlocal dielectric screening effects. The local chemical coupling is often difficult to predict or control experimentally. Nonlocal dielectric screening, on the other hand, can be tuned by choosing the substrates or layer thickness in a controllable manner. Therefore, a compelling 2D electronic material should offer band edge states that are robust against local chemical coupling effects. Here it is demonstrated that the recently synthesized MoSi$_2$N$_4$ is an ideal 2D semiconductor with robust band edge states protected from capricious environmental chemical coupling effects. Detailed many-body perturbation theory calculations are carried out to illustrate how the band edge states of MoSi$_2$N$_4$ are shielded from the direct chemical coupling effects, but its quasiparticle and excitonic properties can be modulated through the nonlocal dielectric screening effects. This unique property, together with the moderate band gap and the thermodynamic and mechanical stability of this material, paves the way for a range of applications of MoSi$_2$N$_4$ in areas including energy, 2D electronics, and optoelectronics.

preprint2020arXiv

Combined sub-sampling and analytical integration for efficient large-scale $GW$ calculations for 2D systems

Accurate and efficient predictions of the quasiparticle properties of complex materials remain a major challenge due to the convergence issue and the unfavorable scaling of the computational cost with respect to the system size. Quasiparticle $GW$ calculations for two dimensional (2D) materials are especially difficult. The unusual analytical behaviors of the dielectric screening and the electron self-energy of 2D materials make the conventional Brillouin zone (BZ) integration approach rather inefficient and require an extremely dense $k$-grid to properly converge the calculated quasiparticle energies. In this work, we present a combined non-uniform sub-sampling and analytical integration method that can drastically improve the efficiency of the BZ integration in 2D $GW$ calculations. Our work is distinguished from previous work in that, instead of focusing on the intricate dielectric matrix or the screened Coulomb interaction matrix, we exploit the analytical behavior of various terms of the convolved self-energy $Σ(\mathbf{q})$ in the small $\mathbf{q}$ limit. This method, when combined with another accelerated $GW$ method that we developed recently, can drastically speed-up (by over three orders of magnitude) $GW$ calculations for 2D materials. Our method allows fully converged $GW$ calculations for complex 2D systems at a fraction of computational cost, facilitating future high throughput screening of the quasiparticle properties of 2D semiconductors for various applications. To demonstrate the capability and performance of our new method, we have carried out fully converged $GW$ calculations for monolayer C$_2$N, a recently discovered 2D material with a large unit cell, and investigate its quasiparticle band structure in detail.