BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Weiqiang Xie

Weiqiang Xie contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsphysics.app-phcond-mat.mtrl-sciquant-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
9works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2022arXiv

Ultralow voltage, High-speed, and Energy-efficient Cryogenic Electro-Optic Modulator

Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large heat load, and do not show any scalability path. A key element for realizing a cryogenic-to-room temperature optical interconnect is a high-speed electro-optic (EO) modulator operating at 4 K with operation voltage at mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are significantly large compared to the mV scale voltage required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10 mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213 femto-joules/bit, respectively. We achieve this record performance by designing a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free carrier freezing of III-V compounds at low temperatures, with moderate doping level and low loss (intrinsic resonator Q~272,000). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Bridging microcombs and silicon photonic engines for optoelectronics systems

Microcombs have sparked a surge of applications over the last decade, ranging from optical communications to metrology. Despite their diverse deployment, most microcomb-based systems rely on a tremendous amount of bulk equipment to fulfill their desired functions, which is rather complicated, expensive and power-consuming. On the other hand, foundry-based silicon photonics (SiPh) has had remarkable success in providing versatile functionality in a scalable and low-cost manner, but its available chip-based light sources lack the capacity for parallelization, which limits the scope of SiPh applications. Here, we bridge these two technologies by using a power-efficient and operationally-simple AlGaAs on insulator microcomb source to drive CMOS SiPh engines. We present two important chip-scale photonic systems for optical data transmissions and microwave photonics respectively: The first microcomb-based integrated photonic data link is demonstrated, based on a pulse-amplitude 4-level modulation scheme with 2 Tbps aggregate rate, and a highly reconfigurable microwave photonic filter with unprecedented integration level is constructed, using a time stretch scheme. Such synergy of microcomb and SiPh integrated components is an essential step towards the next generation of fully integrated photonic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

High-performance lasers for fully integrated silicon nitride photonics

Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Probing material absorption and optical nonlinearity of integrated photonic materials

Optical microresonators with high quality ($Q$) factors are essential to a wide range of integrated photonic devices. Steady efforts have been directed towards increasing microresonator $Q$ factors across a variety of platforms. With success in reducing microfabrication process-related optical loss as a limitation of $Q$, the ultimate attainable $Q$, as determined solely by the constituent microresonator material absorption, has come into focus. Here, we report measurements of the material-limited $Q$ factors in several photonic material platforms. High-$Q$ microresonators are fabricated from thin films of SiO$_2$, Si$_3$N$_4$, Al$_{0.2}$Ga$_{0.8}$As and Ta$_2$O$_5$. By using cavity-enhanced photothermal spectroscopy, the material-limited $Q$ is determined. The method simultaneously measures the Kerr nonlinearity in each material and reveals how material nonlinearity and ultimate $Q$ vary in a complementary fashion across photonic materials. Besides guiding microresonator design and material development in four material platforms, the results help establish performance limits in future photonic integrated systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dissipative Kerr Solitons in a III-V Microresonator

We demonstrate stable microresonator Kerr soliton frequency combs in a III-V platform (AlGaAs on SiO$_2$) through quenching of thermorefractive effects by cryogenic cooling to temperatures between 4~K and 20~K. This cooling reduces the resonator's thermorefractive coefficient, whose room-temperature value is an order of magnitude larger than that of other microcomb platforms like Si$_3$N$_4$, SiO$_2$, and AlN, by more than two orders of magnitude, and makes soliton states adiabatically accessible. Realizing such phase-stable soliton operation is critical for applications that fully exploit the ultra-high effective nonlinearity and high optical quality factors exhibited by this platform.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient resonance management in ultrahigh-Q one-dimensional photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform

Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication, and how to efficiently integrate them with other standard building blocks, available in exiting PIC platforms. In this work, we demonstrate ultrahigh-Q 1D PhC nanocavities fabricated on a 300 mm SOI wafer by optical lithography, with a record Q factor of up to 0.84 million. Moreover, we show efficient mode management in those oxide embedded cavities by coupling them with an access waveguide and realize two critical components: notch filters and narrow-band reflectors. In particular, they allow both single-wavelength and multi-wavelength operation, at the desired resonant wavelengths, while suppressing all other wavelengths over a broad wavelength range (>100 nm). Compared to traditional cavities, this offers a fantastic strategy for implementing resonances precisely in PIC designs with more freedom in terms of wavelength selectivity and the control of mode number. Given their compatibility with optical lithography and compact footprint, the realized 1D PhC nanocavities will be of profound significance for designing compact and novel resonance-based photonic components on large scale.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultra-bright entangled-photon pair generation from an AlGaAs-on-insulator microring resonator

Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium niobate, but each has fundamental limitations that restrict the photon-pair brightness and quality, including weak optical nonlinearity or high waveguide loss. Here, we demonstrate a novel, ultra-low-loss AlGaAs-on-insulator platform capable of generating time-energy entangled photons in a $Q$ $>1$ million microring resonator with nearly 1,000-fold improvement in brightness compared to existing sources. The waveguide-integrated source exhibits an internal generation rate greater than $20\times 10^9$ pairs sec$^{-1}$ mW$^{-2}$, emits near 1550 nm, produces heralded single photons with $>99\%$ purity, and violates Bell's inequality by more than 40 standard deviations with visibility $>97\%$. Combined with the high optical nonlinearity and optical gain of AlGaAs for active component integration, these are all essential features for a scalable quantum photonic platform.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Integrated turnkey soliton microcombs operated at CMOS frequencies

While soliton microcombs offer the potential for integration of powerful frequency metrology and precision spectroscopy systems, their operation requires complex startup and feedback protocols that necessitate difficult-to-integrate optical and electrical components. Moreover, CMOS-rate microcombs, required in nearly all comb systems, have resisted integration because of their power requirements. Here, a regime for turnkey operation of soliton microcombs co-integrated with a pump laser is demonstrated and theoretically explained. Significantly, a new operating point is shown to appear from which solitons are generated through binary turn-on and turn-off of the pump laser, thereby eliminating all photonic/electronic control circuitry. These features are combined with high-Q $Si_3N_4$ resonators to fully integrate into a butterfly package microcombs with CMOS frequencies as low as 15 GHz, offering compelling advantages for high-volume production.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5*10^6. Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of ~36 uW for a resonator with a 1 THz free spectral range (FSR), ~100 times lower compared to that in previous semiconductor platform. Combs with >250 nm broad span have been generated under a pump power lower than the threshold power of state of the art dielectric micro combs. A soliton-step transition has also been observed for the first time from an AlGaAs resonator. This work is an important step towards ultra-efficient semiconductor-based nonlinear photonics and will lead to fully integrated nonlinear photonic integrated circuits (PICs) in near future.

0 citations0 reviewsNo code linkedOpen access