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Weidong Zhou

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Published work

3 published item(s)

preprint2026arXiv

InfoLaw: Information Scaling Laws for Large Language Models with Quality-Weighted Mixture Data and Repetition

Upweighting high-quality data in LLM pretraining often improves performance, but in datalimited regimes, especially under overtraining, stronger upweighting increases repetition and can degrade performance. However, standard scaling laws do not reliably extrapolate across mixture recipes or under repetitions, making the selection for optimal data recipes at scaling underdetermined. To solve this, we introduce InfoLaw (Information Scaling Laws), a data-aware scaling framework that predicts loss from consumed tokens, model size, data mixture weights, and repetition. The key idea is to model pretraining as information accumulation, where quality controls information density and repetition induces scaledependent diminishing returns. We first collect the model performance after training on datasets that vary in scale, quality distribution, and repetition level. Then we build up the modeling for information so that information accurately predicts those model performance. InfoLaw predicts performance on unseen data recipes and larger scale runs (up to 7B, 425B tokens) with 0.15% mean and 0.96% max absolute error in loss, and it extrapolates reliably across overtraining levels, enabling efficient data-recipe selection under varying compute budgets.

preprint2016arXiv

Thermal Diffusion Boron Doping of Single-Crystal Diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

preprint2015arXiv

Thermal Diffusion Doping of Single Crystal Diamond

With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors faces doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion-implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional boron doping in natural SCD without any phase transitions or lattice damage which can be readily realized with thermal diffusion at relatively low temperature. For the boron doping, we employ a unique dopant carrying medium: heavily doped Si nanomembranes. We further demonstrate selectively doped high-voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high-voltage power conversion systems and for other novel diamond-based electronics.