Researcher profile

Giri Venkataramanan

Giri Venkataramanan contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci eess.SY Systems and Control cond-mat.mes-hall

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preprint2022arXiv

A Grid Fault Tolerant Doubly Fed Induction Generator Wind Turbine via Series Connected Grid Side Converter

With steadily increasing wind turbine penetration, regulatory standards for grid interconnection are evolving to require that wind generation systems ride-through disturbances such as faults and support the grid during such events. Conventional modifications to the doubly fed induction generation (DFIG) architecture for providing ride-through result in limited control of the turbine shaft and grid current during fault events. A DFIG architecture in which the grid side converter is connected in series as opposed to parallel with the grid connection has shown improved low voltage ride through but poor power processing capabilities. In this paper a unified DFIG wind turbine architecture which employs a parallel grid side rectifier and series grid side converter is presented. The combination of these two converters enables unencumbered power processing and improved voltage disturbance ride through. A dynamic model and control structure for this unified architecture is developed. The operation of the system is illustrated using computer simulations.

preprint2021arXiv

A Comparative Evaluation of Power Converter Circuits to Increase the Power Transfer Capability of High Voltage Transmission Lines

AC transmission lines with lengths greater than 80km cannot be used to their maximum capacity due to limits in voltage drops and transient stability. This inefficient way of using conductors in a transmission line can be overcome if the electrical frequency at which energy is transmitted is reduced. This is why this work focuses on the comparison of the Modular Multilevel Matrix Converter (MMMC) and the Back-to-Back Modular Multilevel Converter (BTB-MMC), topologies that have shown qualities as frequency converters. For comparison, an analytical model of each topology is used to relate design considerations to their operational variables. Among the aspects to be compared are, the requirements of the semiconductors, the required reactive components, operating losses and fault tolerance. Detailed design equations, EMTP simulations, and comparison table are presented.

preprint2016arXiv

Thermal Diffusion Boron Doping of Single-Crystal Diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

preprint2015arXiv

Thermal Diffusion Doping of Single Crystal Diamond

With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors faces doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion-implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional boron doping in natural SCD without any phase transitions or lattice damage which can be readily realized with thermal diffusion at relatively low temperature. For the boron doping, we employ a unique dopant carrying medium: heavily doped Si nanomembranes. We further demonstrate selectively doped high-voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high-voltage power conversion systems and for other novel diamond-based electronics.