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Weidong Zheng

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Published work

2 published item(s)

preprint2026arXiv

Classification-Head Bias in Class-Level Machine Unlearning: Diagnosis, Mitigation, and Evaluation

Class-level machine unlearning aims to remove the influence of specified classes while preserving model utility on retained classes. Existing methods are commonly evaluated by retain-set accuracy, forget-set accuracy, and unlearning time, but these metrics provide limited insight into how forgetting is achieved internally. In this paper, we reveal a bias-dominated shortcut in class-level unlearning: the prediction of forgotten classes can be suppressed by decreasing the corresponding bias terms in the final classification head. We first analyze the gradient dynamics of classification-head biases under softmax cross-entropy training, explaining why retain-set-only optimization tends to reduce the biases of absent classes. Based on this observation, we introduce BiasShift as a diagnostic baseline, showing that simple bias manipulation can satisfy conventional unlearning metrics while leaving abnormal bias patterns that reveal forgotten labels. To mitigate excessive forgotten-class bias suppression, we propose two bias-aware mechanisms, namely Two-Stage Bias Gradient Reversal Mechanism (TS-BGRM) and Lower-Bound Hinge Regularization (LB-HR). We further introduce three bias-oriented metrics, including Bias Stability Coefficient (BSC), Median Bias Gap (MBG), and Minimal Bias Score (MBS), to quantify bias dependence and potential leakage. Experiments on CIFAR-10, CIFAR-100, and Tiny-ImageNet demonstrate that the proposed methods maintain competitive unlearning performance while producing more stable bias distributions. We have released our code at {https://github.com/zwd2024/Beyond-the-Shadow-of-Bias-From-Classification-Head-Bias-to-Parameter-Redistribution}.

preprint2022arXiv

Non-equilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Accurate measurements and physical understanding of thermal boundary resistance (R) of two-dimensional (2D) materials are imperative for effective thermal management of 2D electronics and photonics. In previous studies, heat dissipation from 2D material devices was presumed to be dominated by phonon transport across the interfaces. In this study, we find that in addition to phonon transport, thermal resistance between non-equilibrium phonons in the 2D materials could play a critical role too when the 2D material devices are internally self-heated, either optically or electrically. We accurately measure R of oxide/MoS2/oxide and oxide/graphene/oxide interfaces for three oxides (SiO2, HfO2, Al2O3) by differential time-domain thermoreflectance (TDTR). Our measurements of R across these interfaces with external heating are 2-to-4 times lower than previously reported R of the similar interfaces measured by Raman thermometry with internal self-heating. Using a simple model, we show that the observed discrepancy can be explained by an additional internal thermal resistance (Rint) between non-equilibrium phonons present during Raman measurements. We subsequently estimate that for MoS2 and graphene, Rint is about 31 and 22 m2 K/GW, respectively. The values are comparable to the thermal resistance due to finite phonon transmission across interfaces of 2D materials and thus cannot be ignored in the design of 2D material devices. Moreover, the non-equilibrium phonons also lead to a different temperature dependence than that by phonon transport. As such, our work provides important insights into physical understanding of heat dissipation in 2D material devices.