BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Wei-xiao Ji

Wei-xiao Ji contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 21 - Emerging
6works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2016arXiv

Bismuthylene Monolayer: A Promising Quantum Spin Hall Insulator with Large Band Gaps

By means of first-principles calculations, we predict a new 2D QSH insulator in the porous allotrope of Bismuth monolayer, bismuthylene, its dynamics stability being confirmed by phonon spectrum and molecular dynamics simulations. The analyses of electronic structures reveal that it is a native QSH state with a gap much as large as 0.29 eV at the Γ point, which is larger than the buckled (0.2 eV) and flattened (0.2 eV) bismuth, Bi4Br4 (0.18 eV), as well as stanene (0.1 eV), also more stable energetically than these systems. Interestingly, the bismuthylene has tunable band gaps and nontrivial band topology under strains within -6 - 5 % and electric fields up to 0.8 eV/Å. Furthermore, a tight-binding model is constructed to explain the low-energy physics behind band topology induced by spin-orbit coupling. We also propose a quantum well by sandwiching bismuthylene between two BN sheets and reveals that this structure remains topologically nontrivial with a sizeable band gap. This findings on QSH effect of bismuthylene provide a viable platform in new generation of dissipationless electronics and spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Large-gap quantum spin Hall state in functionalized dumbbell stanene

Two-dimensional dumbbell (DB) stanene has been proposed as a promising candidate material for realizing quantum spin Hall effect (QSHE) by Tang et al [P. Tang, P. Chen, W. Cao, H. Huang, S. Cahangirov, L. Xian, Y. Xu, S. C. Zhang, W. Duan, A. Rubio. Phys. Rev. B, 90, 121408 (2014)]. However, the small bulk-gap limits its possible applications at room temperature. Based on first-principles calculations, we predict that its band gap can be enhanced to 148 meV under methyl-functionalization, which can be further tuned by applying lattice strain. The QSHE is confirmed by s-px,y band inversion, topological invariant Z2 = 1, and helical gapless edge within bulk band gap. Notably, the characteristic properties of edge states, such as the large Fermi velocity and Dirac cone, can be modulated by edge modification. The effects of substrates on topological properties are explored when it is grown on various substrates, like SiC, h-BN, and Bi2Te3 sheets. These findings provide significant guidance for future fabrication and realistic applications of QSHE based on stanene in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film

Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoeletronics. Searching for 2D III-V films with high structural stability and large-gap are crucial for the realizations of dissipationless transport edge states using quantum spin Hall (QSH) effect. Based on first-principles calculations, we predict that the methyl-functionalized InBi monolayer (InBiCH3) has no dynamic instability, and host a QSH state with a band gap as large as 0.29 eV, exhibiting an interesting electronic behavior viable for room-temperature applications. The topological characteristic is confirmed by s-pxy bands inversion, topological invariant Z2 number, and the time-reversal symmetry protected helical edge states. Noticeably, the QSH states are tunable and robust against the mechanical strain, electric field and different levels of methyl coverages. We also find that InBiCH3 supported on h-BN substrate maintains a nontrivial QSH state, which harbors the edge states lying within the band gap of substrate. These findings demonstrate that the methyl-functionalized III-V films may be a good QSH platform for device design and fabrication in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Two-Dimensional Group-IV Chalcogenide Si2Te2 film: A New Quantum Spin Hall Insulator with Sizable Band Gap

Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2 film to be a 2D QSH insulator with a fundamental band gap of 0.29 eV, which is tunable under external strain. This nontrivial topological phase stems from band inversion between the Si-px,y and Te-px,y orbitals, demonstrated by a single pair of topologically protected helical edge states with Dirac point locating in the bulk gap. Notably, the characteristic properties of edge states, such as the Fermi velocity and edge shape, can be tuned by edge modifications. Additionally, the h-BN semiconductor is an ideal substrate for experimental realization of 2D Si2Te2 film, without destroying its nontrivial topology. Our works open a new route for designing topological spintronics devices based on 2D silicon-based films.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Functionalized Thallium Antimony Films as Excellent Candidates for Large-Gap Quantum Spin Hall Insulator

Group III-V films are of great importance for their potential application in spintronics and quantum computing. Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless transport edge channels using quantum spin Hall (QSH) effects. Here we use first-principles calculations to predict a class of large-gap QSH insulators in functionalized TlSb monolayers (TlSbX2; (X = H, F, Cl, Br, I)), with sizable bulk gaps as large as 0.22~0.40 eV. The QSH state is identified by Z2 topological invariant together with helical edge states induced by spin-orbit coupling (SOC). Noticeably, the inverted band gap in the nontrivial states can be effectively tuned by the electric field and strain. Additionally, these films on BN substrate also maintain a nontrivial QSH state, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of QSH insulators based on two-dimensional honeycomb lattices in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable Quantum Spin Hall Effect via Strain in two-Dimensional Arsenene Monolayer

The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the strain-driven topological phase transition of two-dimensional (2D) arsenene monolayer. We find that the band gap of arsenene decreases with increasing strain and changes from indirect to direct, and then the s-p band inversion takes place at Γ point as the tensile strain is larger than 11.14%, which lead to a nontrivially topological state. A single pair of topologically protected helical edge states is established for the edge of arsenene, and their QSH states are confirmed with nontrivial topological invariant Z2 = 1. We also propose high-dielectric BN as an ideal substrate for the experimental synthesis of arsenene, maintaining its nontrivial topology. These findings provide a promising candidate platform for topological phenomena and new quantum devices operating at nanoelectronics.

0 citations0 reviewsNo code linkedOpen access