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Researcher profile

Run-Wu Zhang

Run-Wu Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hall

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Published work

8 published item(s)

preprint2025arXiv

A Theory of Anisotropic Magnetoresistance in Altermagnets and Its Applications

Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting opportunities for spintronics. A key challenge in altermagnetic spintronics is the efficient reading and writing of information by switching the Neel vector orientations to represent binary 0 and 1. Here, we develop a microscopic theory of the magnetoresistance effect in altermagnets and propose that magnetoresistance anisotropy can serve as an effective mechanism for the electrical readout of the Neel vector. Our theory describes a two-step charge-spin-charge conversion process governed by the interplay between spin splitting and spin Hall effects: a longitudinal electric field induces transverse drift spin currents, which induce significant spin accumulation at the boundaries, generating a diffusive spin current that is converted back into a longitudinal charge current. By switching the Neel vector, a substantial change in magnetoresistance, akin to giant magnetoresistance in ferromagnets, is realized, enabling an electrically readable altermagnetic memory. Our microscopic theory provides deeper insights into the fundamental physics of the magnetoresistance effect in altermagnets and offers valuable guidance for designing next-generation ultradense and ultrafast spintronic devices based on altermagnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals

Recently discovered high-quality nodal chain spin-gapless semimetals $M$F$_3$ ($M$ = Pd, Mn) feature an ultra-clean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100\% spin-polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew-scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Inventory of high-quality flat-band van der Waals materials

More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Nodal Line Spin-gapless Semimetals and High-quality Candidate Materials

Spin-gapless semimetals (SGSMs), which generate 100\% spin polarization, are viewed as promising semi-half-metals in spintronics with high speed and low consumption. We propose and characterize a new $\mathbb{Z_{\mathrm{2}}}$ class of topological nodal line (TNL) in SGSMs. The proposed TNLSGSMs are protected by space-time inversion symmetry or glide mirror symmetry with two-dimensional (2D) fully spin-polarized nearly flat surface states. Based on first-principles calculations and effective model analysis, a series of high-quality materials with $\textit{R}\overline{3}\textit{c}$ and $\textit{R}{3}\textit{c}$ space groups are predicted to realize such TNLSGSMs (chainlike). The 2D fully spin-polarized nearly flat surface states may provide a route to achieving equal spin pairing topological superconductivity as well as topological catalysts.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Bismuthylene Monolayer: A Promising Quantum Spin Hall Insulator with Large Band Gaps

By means of first-principles calculations, we predict a new 2D QSH insulator in the porous allotrope of Bismuth monolayer, bismuthylene, its dynamics stability being confirmed by phonon spectrum and molecular dynamics simulations. The analyses of electronic structures reveal that it is a native QSH state with a gap much as large as 0.29 eV at the Γ point, which is larger than the buckled (0.2 eV) and flattened (0.2 eV) bismuth, Bi4Br4 (0.18 eV), as well as stanene (0.1 eV), also more stable energetically than these systems. Interestingly, the bismuthylene has tunable band gaps and nontrivial band topology under strains within -6 - 5 % and electric fields up to 0.8 eV/Å. Furthermore, a tight-binding model is constructed to explain the low-energy physics behind band topology induced by spin-orbit coupling. We also propose a quantum well by sandwiching bismuthylene between two BN sheets and reveals that this structure remains topologically nontrivial with a sizeable band gap. This findings on QSH effect of bismuthylene provide a viable platform in new generation of dissipationless electronics and spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Two-Dimensional Group-IV Chalcogenide Si2Te2 film: A New Quantum Spin Hall Insulator with Sizable Band Gap

Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2 film to be a 2D QSH insulator with a fundamental band gap of 0.29 eV, which is tunable under external strain. This nontrivial topological phase stems from band inversion between the Si-px,y and Te-px,y orbitals, demonstrated by a single pair of topologically protected helical edge states with Dirac point locating in the bulk gap. Notably, the characteristic properties of edge states, such as the Fermi velocity and edge shape, can be tuned by edge modifications. Additionally, the h-BN semiconductor is an ideal substrate for experimental realization of 2D Si2Te2 film, without destroying its nontrivial topology. Our works open a new route for designing topological spintronics devices based on 2D silicon-based films.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Functionalized Thallium Antimony Films as Excellent Candidates for Large-Gap Quantum Spin Hall Insulator

Group III-V films are of great importance for their potential application in spintronics and quantum computing. Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless transport edge channels using quantum spin Hall (QSH) effects. Here we use first-principles calculations to predict a class of large-gap QSH insulators in functionalized TlSb monolayers (TlSbX2; (X = H, F, Cl, Br, I)), with sizable bulk gaps as large as 0.22~0.40 eV. The QSH state is identified by Z2 topological invariant together with helical edge states induced by spin-orbit coupling (SOC). Noticeably, the inverted band gap in the nontrivial states can be effectively tuned by the electric field and strain. Additionally, these films on BN substrate also maintain a nontrivial QSH state, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of QSH insulators based on two-dimensional honeycomb lattices in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable Quantum Spin Hall Effect via Strain in two-Dimensional Arsenene Monolayer

The search for new quantum spin Hall (QSH) phase and effective manipulations of their edge states are very important for both fundamental sciences and practical applications. Here, we use first-principles calculations to study the strain-driven topological phase transition of two-dimensional (2D) arsenene monolayer. We find that the band gap of arsenene decreases with increasing strain and changes from indirect to direct, and then the s-p band inversion takes place at Γ point as the tensile strain is larger than 11.14%, which lead to a nontrivially topological state. A single pair of topologically protected helical edge states is established for the edge of arsenene, and their QSH states are confirmed with nontrivial topological invariant Z2 = 1. We also propose high-dielectric BN as an ideal substrate for the experimental synthesis of arsenene, maintaining its nontrivial topology. These findings provide a promising candidate platform for topological phenomena and new quantum devices operating at nanoelectronics.

0 citations0 reviewsNo code linkedOpen access