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Wei-Qing Huang

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Published work

3 published item(s)

preprint2022arXiv

Symmetry-breaking-induced multifunctionalities of two-dimensional chromium-based materials for nanoelectronics and clean energy conversion

Structural symmetry-breaking that could lead to exotic physical properties plays a crucial role in determining the functions of a system, especially for two-dimensional (2D) materials. Here we demonstrate that multiple functionalities of 2D chromium-based materials could be achieved by breaking inversion symmetry via replacing Y atoms in one face of pristine CrY (Y=P, As, Sb) monolayers with N atoms, i.e., forming Janus Cr2NY monolayers. The functionalities include spin-gapless, very low work function, inducing carrier doping and catalytic activity, which are predominately ascribed to the large intrinsic dipole of Janus Cr2NY monolayers, making them having great potentials in various applications. Specifically, Cr2NSb is found to be a spin-gapless semiconductor, Cr2NP and Cr2NHPF could simultaneously induce n- and p-type carrier doping for two graphene sheets with different concentrations (forming intrinsic p-n vertical junction), and Cr2NY exhibits excellent electrocatalytic hydrogen evolution activity, even superior to benchmark Pt. The results confirm that breaking symmetry is a promising approach for the rational design of multifunctional 2D materials.

preprint2016arXiv

Interfacial interaction in monolayer transition metal dichalcogenides (MX2)/metal oxide heterostructures and its effects on electronic and optical properties: The case of MX2/CeO2

Two-dimensional transition metal dichalcogenides (MX2)/metal oxide heterostructures have shown unique physical properties, making them promising materials for various applications ranging from photocatalysis to solar energy conversion. Understanding the interfacial interactions is highly desirable for designing these heterostructures having excellent performance. Here we systematically study the interfacial interaction in monolayer MX2 (M=Mo, W; X=S, Se)/CeO2 heterostructures and its effects on electronic and optical properties by density functional theory. It is found that the interfacial interaction in the MX2/CeO2 depends predominantly on the chalcogen (X) element. Particularly, the band gap variation and important electronic states at conduction band minimum or valence band maximum of the heterostructures are determined by the strength of interfacial interaction. The MX2/CeO2 heterostructures with the same chalcogen (X) element have similar absorption spectra from ultraviolet to near-infrared regions. These results suggest that the chalcogen (X) element is a key factor in tuning the properties of MX2/metal oxide heterostructures.

preprint2015arXiv

Tuning near-gap electronic structure, interface charge transfer and visible light response of hybrid doped graphene and Ag3PO4 composite: Dopant effects

The enhanced photocatalytic performance of doped graphene(GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the effect of dopants, we investigate the electronic structures and optical properites of doped GR/Ag3PO4 nanocomposites using the first-principles calculations, demonstrating that the band gap, near-gap electronic structure and interface charge transfer of the doped GR/Ag3PO4(100) composite can be tuned by the dopants. Interestingly, the doping atom and C atoms bonded to dopant become active sites for photocatalysis because they are positively or negatively charged due to the charge redistribution caused by interaction. The dopants can enhance the visible light absorption and photoinduced electrons transfer. We propose that the N atom may be most appropriate doping for the GR/Ag3PO4 photocatalyst. This work can rationalize the available experimental results about N-doped GR-semiconductor composites, and enriches our understanding on the effect of dopants in the doped GR-based composites for developing high-performance photocatalysts.