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Wangyu Hu

Wangyu Hu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-ph

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Published work

4 published item(s)

preprint2022arXiv

Symmetry-breaking-induced multifunctionalities of two-dimensional chromium-based materials for nanoelectronics and clean energy conversion

Structural symmetry-breaking that could lead to exotic physical properties plays a crucial role in determining the functions of a system, especially for two-dimensional (2D) materials. Here we demonstrate that multiple functionalities of 2D chromium-based materials could be achieved by breaking inversion symmetry via replacing Y atoms in one face of pristine CrY (Y=P, As, Sb) monolayers with N atoms, i.e., forming Janus Cr2NY monolayers. The functionalities include spin-gapless, very low work function, inducing carrier doping and catalytic activity, which are predominately ascribed to the large intrinsic dipole of Janus Cr2NY monolayers, making them having great potentials in various applications. Specifically, Cr2NSb is found to be a spin-gapless semiconductor, Cr2NP and Cr2NHPF could simultaneously induce n- and p-type carrier doping for two graphene sheets with different concentrations (forming intrinsic p-n vertical junction), and Cr2NY exhibits excellent electrocatalytic hydrogen evolution activity, even superior to benchmark Pt. The results confirm that breaking symmetry is a promising approach for the rational design of multifunctional 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A New Embedded-Atom Method Approach Based On the p-th Moment Approximation

Large scale atomistic simulations with suitable interatomic potentials are widely employed by scientists or engineers of different areas. Quick generation of high-quality interatomic potentials is of urgent need under present circumstances, which largely relies on the developments of potential construction methods and algorithms in this area. Quantities of interatomic potential models have been proposed and parameterized with various methods, such as analytic method, force-matching approach and multi-object optimization method, in order to make the potentials more transferable. Without apparently lowing precisions for describing the target system, potentials of fewer fitting parameters (FPs) are somewhat more physically reasonable. Thus, studying methods of reducing FP number is helpful to understand the underline physics of simulated systems and generalize the construction methods to other similar systems. However, few reported works concentrate on methods of reducing the number of FPs without affecting precisions. In this work, the methods of reducing the FP number while keeping the precisions are discussed from two aspects. Firstly, the physical ideas of constructions of the embedded-atom method (EAM) potential model are modified to make the potential more robust, flexible and scalable without introducing too many FPs.Secondly, the smaller reference data set (SRD), compared with the target reference database for describing the mechanical behaviors of aluminum, is employed in our construction procedures.

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preprint2016arXiv

Atomistic modeling of the anomalous helium behaviors in vanadium

Ab initio calculations have been performed to clarify the primary behaviors of He atoms in vanadium and to generate the database for the development of the interatomic potential for V-He system within the framework of the"s-band"model.The calculated formation energies of the tetrahedral,octahedral and substitutional He defects,as well as those for He2,He3 and He2V clusters are reasonable when compared with relevant experimental results and ab initio calculations under the same conditions.The applicability of the present V-He potential for atomistic simulations to investigate the moving,clustering,and trapping of interstitial He atoms in vanadium are demonstrated.Similar to the results in iron and tungsten,the interstitial He atoms can migrate quickly in vanadium. However,He atoms aggregate into clusters with low binding energies,and the trapping of He atoms depend much on the pre-existing traps in vanadium.

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preprint2016arXiv

Interfacial interaction in monolayer transition metal dichalcogenides (MX2)/metal oxide heterostructures and its effects on electronic and optical properties: The case of MX2/CeO2

Two-dimensional transition metal dichalcogenides (MX2)/metal oxide heterostructures have shown unique physical properties, making them promising materials for various applications ranging from photocatalysis to solar energy conversion. Understanding the interfacial interactions is highly desirable for designing these heterostructures having excellent performance. Here we systematically study the interfacial interaction in monolayer MX2 (M=Mo, W; X=S, Se)/CeO2 heterostructures and its effects on electronic and optical properties by density functional theory. It is found that the interfacial interaction in the MX2/CeO2 depends predominantly on the chalcogen (X) element. Particularly, the band gap variation and important electronic states at conduction band minimum or valence band maximum of the heterostructures are determined by the strength of interfacial interaction. The MX2/CeO2 heterostructures with the same chalcogen (X) element have similar absorption spectra from ultraviolet to near-infrared regions. These results suggest that the chalcogen (X) element is a key factor in tuning the properties of MX2/metal oxide heterostructures.

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