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Wei L. Wang

Wei L. Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2011arXiv

Approaching the Intrinsic Bandgap in Suspended High-Mobility Graphene Nanoribbons

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the bandgap in non-armchair GNRs is partially due to the magnetic zigzag edges.

preprint2010arXiv

On Graphene Hydrate

Using first-principles calculations, we show that the formation of carbohydrate directly from carbon and water is energetically favored when graphene membrane is subjected to aqueous environment with difference in chemical potential across the two sides. The resultant carbohydrate is two-dimensional, where the hydrogen atoms are exclusively attached on one side of graphene while the hydroxyl groups on the other side form a herringbone reconstruction that optimizes hydrogen bonding. We show that graphene undergos semi-metal-insulator transition upon hydration which is readily detectable from the significant shift in the vibration spectrum. The hydrate form of graphene suggests new applications for graphene in electronics, either deposited on a substrate or in solution.

preprint2009arXiv

Topological Frustration in Graphene Nanoflakes: Magnetic Order and Spin Logic Devices

Magnetic order in graphene-related structures can arise from size effects or from topological frustration. We introduce a rigorous classification scheme for the types of finite graphene structures (nano-flakes) which lead to large net spin or to antiferromagnetic coupling between groups of electron spins. Based on this scheme, we propose specific examples of structures that can serve as the fundamental (NOR and NAND) logic gates for the design of high-density ultra-fast spintronic devices. We demonstrate, using ab initio electronic structure calculations, that these gates can in principle operate at room temperature with very low and correctable error rates.