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W. Zawadzki

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other cond-mat.quant-gas

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preprint2019arXiv

Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content

High quality p-type PbTe-CdTe monocrystalline alloys containing up to 10 at.$\%$ of Cd are obtained by self-selecting vapor transport method. Mid infrared photoluminescence experiments are performed to follow the variation of the fundamental energy gap as a function of Cd content. The Hall mobility, thermoelectric power, thermal conductivity and thermoelectric figure of merit parameter $ZT$ are investigated experimentally and theoretically paying particular attention to the two-valence band structure of the material. It is shown that the heavy-hole band near the $Σ$ point of the Brillouin zone plays an important role and is responsible for the Pb$_{1-x}$Cd$_x$Te hole transport at higher Cd-content. Our data and their description can serve as the standard for Pb$_{1-x}$Cd$_x$Te single crystals with $x$ up to 0.1. It is shown, that monocrystalline Pb$_{1-x}$Cd$_x$Te samples with relatively low Cd content of about 1 at.\% and hole concentration of the order of 10$^{20}$ cm$^{-3}$ may exhibit $ZT \approx$ 1.4 at 600 K.

preprint2015arXiv

Conduction electrons localized by charged magneto-acceptors A$^{2-}$ in GaAs/GaAlAs quantum wells

A variational theory is presented of A$^{1-}$ and A$^{2-}$ centers, i.e. of a negative acceptor ion localizing one and two conduction electrons, respectively, in a GaAs/GaAlAs quantum well in the presence of a magnetic field parallel to the growth direction. A combined effect of the well and magnetic field confines conduction electrons to the proximity of the ion, resulting in discrete repulsive energies above the corresponding Landau levels. The theory is motivated by our experimental magneto-transport results which indicate that, in a heterostructure doped in the GaAs well with Be acceptors, one observes a boil-off effect in which the conduction electrons in the crossed-field configuration are pushed by the Hall electric field from the delocalized Landau states to the localized acceptor states and cease to conduct. A detailed analysis of the transport data shows that, at high magnetic fields, there are almost no conducting electrons left in the sample. It is concluded that one negative acceptor ion localizes up to four conduction electrons.

preprint2015arXiv

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1-xSnxSe

The transverse Nernst Ettingshausen (N-E) effect and electron mobility in Pb$_{1-x}$Sn$_x$Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap $E_g$. The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from trivial to nontrivial one in which the topological crystalline insulator states appear at the surface. Our work presents several new aspects. It is shown experimentally and theoretically that the bulk N-E effect has a maximum when the energy gap $E_g$ of the mixed crystal goes through zero value. This result contradicts the claim made in the literature that the N-E effect changes sign when the gap vanishes. We successfully describe $dc$ transport effects in the situation of extreme band's nonparabolicity which, to the best of our knowledge, has never been tried before. A situation is reached in which both two-dimensional bands (topological surface states) and three-dimensional bands are linear in electron \textbf{k} vector. Various scattering modes and their contribution to transport phenomena in Pb$_{1-x}$Sn$_x$Se are analyzed. As the energy gap goes through zero, some transport integrals have a singular (nonphysical) behaviour and we demonstrate how to deal with this problem by introducing damping.

preprint2013arXiv

Reservoir model for two-dimensional electron gases in quantizing magnetic fields: a review

We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir is sufficiently large, it pins the Fermi level to a certain energy. As a result, in a varying external magnetic field, the thermodynamic equilibrium will force oscillations of the electron density in and out of the quantum well (QW). This leads to a number of physical phenomena in magneto-transport, interband and intraband magneto-optics, magnetization, magneto-plasma dispersion, etc. In particular, as first proposed by Baraff and Tsui, the density oscillations in and out of QW lead to plateaus in the Integer Quantum Hall Effect (IQHE) at values observed in experiments. The gathered evidence, especially from magneto-optical investigations, allows us to conclude that, indeed, in most GaAs/GaAlAs hetrostructures one deals with open systems in which the electron density in QWs oscillates as the magnetic field varies. Relation of the density oscillations to other factors, such as electron localization, and their combined influence on the quantum transport in 2D electron gases, is discussed. In particular, a validity of the classical formula for the Hall resistivity ρxy = B/Nec is considered. It is concluded that the density oscillations are not sufficient to be regarded as the only source of plateaus in IQHE, although such claims have been sometimes made in the past and present. Still, our general conclusion is that the reservoir approach should be included in various descriptions of 2D electron gases in the present of a magnetic field. An attempt has been made to quote all the relevant literature on the subject.

preprint2008arXiv

Zitterbewegung (trembling motion) of electrons in narrow gap semiconductors

Theory of trembling motion [Zitterbewegung (ZB)] of charge carriers in various narrow-gap materials is reviewed. Nearly free electrons in a periodic potential, InSb-type semiconductors, bilayer graphene, monolayer graphene and carbon nanotubes are considered. General features of ZB are emphasized. It is shown that, when the charge carriers are prepared in the form of Gaussian wave packets, the ZB has a transient character with the decay time of femtoseconds in graphene and picoseconds in nanotubes. Zitterbewegung of electrons in graphene in the presence of an external magnetic field is mentioned. A similarity of ZB in semiconductors to that of relativistic electrons in a vacuum is stressed. Possible ways of observing the trembling motion in solids are mentioned.