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W. Siemons

W. Siemons contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2014arXiv

Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$

We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character.

preprint2013arXiv

Unit cell orientation of tetragonal-like BiFeO$_3$ thin films grown on highly miscut LaAlO$_3$ substrates

Synchrotron and lab-scale x-ray diffraction shows that tetragonal-like T&#39;-BiFeO3 films on miscut LaAlO3 substrates (miscut < 5 deg) exhibit (00l)-planes tilted away from those of the substrate as predicted by the &#34;Nagai model&#34; (except for miscut <0.2 deg). Tilts as large as 1 deg are achieved even in 100 nm thick films, strikingly larger than those observed in other perovskites. We attribute this to the large c/a ratio and the high crystalline coherency of the T&#39;-BiFeO3/LaAlO3 interface. This coherency is possible through an observed &#34;diagonal-on-diagonal&#34; alignment. Interestingly, the substrate miscut does not influence the relative population of monoclinic domains.

preprint2012arXiv

Antiferromagnetic transitions in `T-like&#39; BiFeO3

Recent studies have reported the existence of an epitaxially-stabilized tetragonal-like (&#39;T-like&#39;) monoclinic phase in BiFeO3 thin-films with high levels of compressive strain. While their structural and ferroelectric properties are different than those of rhombohedral-like (&#39;R-like&#39;) films with lower levels of strain, little information exists on magnetic properties. Here, we report a detailed neutron scattering study of a nearly phase-pure film of T-like BiFeO3. By tracking the temperature dependence and relative intensity of several superstructure peaks in the reciprocal lattice cell, we confirm antiferromagnetism with largely G-type character and TN = 324 K, significantly below a structural phase transition at 375 K, contrary to previous reports. Evidence for a second transition, possibly a minority magnetic phase with C-type character is also reported with TN = 260 K. The co-existence of the two magnetic phases in T-like BiFeO3 and the difference in ordering temperatures between R-like and T-like systems is explained through simple Fe-O-Fe bond distance considerations.

preprint2012arXiv

Unusual size effects on thermoelectricity in a strongly correlated oxide

We investigated size effects on thermoelectricity in thin films of a strongly correlated layered cobaltate. At room temperature, the thermopower is independent of thickness down to 6 nm. This unusual behavior is inconsistent with the Fuchs-Sondheimer theory, which is used to describe conventional metals and semiconductors, and is attributed to the strong electron correlations in this material. Although the resistivity increases, as expected, below a critical thickness of $\sim$ 30 nm. The temperature dependent thermopower is similar for different thicknesses but resistivity shows systematic changes with thickness. Our experiments highlight the differences in thermoelectric behavior of strongly correlated and uncorrelated systems when subjected to finite size effects. We use the atomic limit Hubbard model at the high temperature limit to explain our observations. These findings provide new insights on decoupling electrical conductivity and thermopower in correlated systems.

preprint2010arXiv

Determination of the spin-flip time in ferromagnetic SrRuO3 from time-resolved Kerr measurements

We report time-resolved Kerr effect measurements of magnetization dynamics in ferromagnetic SrRuO3. We observe that the demagnetization time slows substantially at temperatures within 15K of the Curie temperature, which is ~ 150K. We analyze the data with a phenomenological model that relates the demagnetization time to the spin flip time. In agreement with our observations the model yields a demagnetization time that is inversely proportional to T-Tc. We also make a direct comparison of the spin flip rate and the Gilbert damping coefficient showing that their ratio very close to kBTc, indicating a common origin for these phenomena.

preprint2010arXiv

Misfit Strain Accommodation in Epitaxial ABO3 Perovskites: Lattice Rotations and Lattice Modulations

We present a study of the lattice response to the compressive and tensile biaxial stress in La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO) thin films grown on a variety of single crystal substrates: SrTiO3, DyScO3, NdGaO3 and (La,Sr)(Al,Ta)O3. The results show, that in thin films under misfit strain, both SRO and LSMO lattices, which in bulk form have orthorhombic (SRO) and rhombohedral (LSMO) structures, assume unit cells that are monoclinic under compressive stress and tetragonal under tensile stress. The applied stress effectively modifies the BO6 octahedra rotations, which degree and direction can be controlled by magnitude and sign of the misfit strain. Such lattice distortions change the B-O-B bond angles and therefore are expected to affect magnetic and electronic properties of the ABO3 perovskites.

preprint2010arXiv

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

preprint2009arXiv

Understanding the nature of electronic effective mass in double-doped SrTiO$_{3}$

We present an approach to tune the effective mass in an oxide semiconductor by a double doping mechanism. We demonstrate this in a model oxide system Sr$_{1-x}$La$_x$TiO$_{3-δ}$, where we can tune the effective mass ranging from 6--20$\mathrm{m_e}$ as a function of filling or carrier concentration and the scattering mechanism, which are dependent on the chosen lanthanum and oxygen vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr$_{1-x}$La$_x$TiO$_{3-δ}$. Our method, which shows that the effective mass decreases with carrier concentration, provides a means for understanding the nature of transport processes in oxides, which typically have large effective mass and low electron mobility, contrary to the tradional high mobility semiconductors.

preprint2008arXiv

Critical thickness for itinerant ferromagnetism in ultrathin films of SrRuO$_3$

Ultrathin films of the itinerant ferromagnet SrRuO$_3$ were studied using transport and magnto-optic polar Kerr effect. We find that below 4 monolayers the films become insulating and their magnetic character changes as they loose their simple ferromagnetic behavior. We observe a strong reduction in the magnetic moment which for 3 monolayers and below lies in the plane of the film. Exchange-bias behavior is observed below the critical thickness, and may point to induced antiferromagnetism in contact with ferromagnetic regions.