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W. P. Beyermann

W. P. Beyermann appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2020arXiv

Flexoelectric effect mediated spin-to-charge conversion at amorphous-Si thin film interfaces

Interfacial spin to charge conversion arises due to an electric potential perpendicular to the interface. The electric potential can be artificially induced, for example, using ferroelectric and piezoelectric thin films at the interface. An alternate way to induce the electric potential could be flexoelectric field. The flexoelectricity can be observed in all the material that either have or lack inversion symmetry, additionally no large gate bias is needed. In this experimental study, we report large spin to charge conversion (spin-Hall angle- 0.578) at Ni80Fe20/amorphous-Si interfaces attributed to flexoelectricity mediated Rashba spin-orbit coupling. The flexoelectricity at the interface also gave rise to interlayer spin-acoustic phonon or flexo-magnetoelastic coupling. In addition to spin-charge conversion, the strained interfaces also led to almost three-fold increase in anomalous Nernst effect. This strain engineering for spin dependent thermoelectric behavior at room temperature opens a new window to the realization of spintronics and spin-caloritronics devices.

preprint2020arXiv

Large spin-Hall effect in Si at room temperature

Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin-Hall magnetoresistance in both p-Si and n-Si at room temperature and it is an order of magnitude larger than that of Pt. One explanation of the unexpectedly large and efficient spin-Hall effect is spin-phonon coupling instead of spin-orbit coupling. The macroscopic origin of the spin-phonon coupling can be large strain gradients that can exist in the freestanding Si films. This discovery in a light, earth abundant and centrosymmetric material opens a new path of strain engineering to achieve spin dependent properties in technologically highly-developed materials.

preprint2009arXiv

Penetration depth, multiband superconductivity, and absence of muon-induced perturbation in superconducting PrOs$_{4}$Sb$_{12}$

Transverse-field muon spin rotation ($μ$SR) experiments in the heavy-fermion superconductor PrOs$_{4}$Sb$_{12}$ ($T_{c}=1.85$ K) suggest that the superconducting penetration depth $λ(T)$ is temperature-independent at low temperatures, consistent with a gapped quasiparticle excitation spectrum. In contrast, radiofrequency (rf) inductive measurements yield a stronger temperature dependence of $λ(T)$, indicative of point nodes in the gap. This discrepancy appears to be related to the multiband structure of PrOs$_{4}$Sb$_{12}$. Muon Knight shift measurements in PrOs$_{4}$Sb$_{12}$ suggest that the perturbing effect of the muon charge on the neighboring Pr$^{3+}$ crystalline electric field is negligibly small, and therefore is unlikely to cause the difference between the $μ$SR and rf results.