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Researcher profile

W. M. Lü

W. M. Lü contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

11 published item(s)

preprint2014arXiv

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.

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preprint2014arXiv

Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

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preprint2014arXiv

Imaging and Control of Ferromagnetism in a Polar Antiferromagnet

Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase transition when atomically growing polar antiferromagnetic LaMnO3 (001) films on SrTiO3 substrates. For a thickness of five unit cells or less, the films are antiferromagnetic, but for six unit cells or more, the LaMnO3 film undergoes a phase transition to a ferromagnetic state over its entire area, which is visualized by scanning superconducting quantum interference device microscopy. The transition is explained in terms of electronic reconstruction originating from the polar nature of the LaMnO3 (001) films. Our results demonstrate how new emergent functionalities can be visualized and engineered in atomically thick oxide films at the atomic level.

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preprint2013arXiv

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 have called in question the original polarization catastrophe model. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (around 1.6 nm) for the oxygen-annealed crystalline case, whereas in the amorphous case, the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restores the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case. However, the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO3 overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO3/SrTiO3 heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures. Furthermore, we find that the crystallinity of the LaAlO3 layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO3 overlayers.

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preprint2013arXiv

Tailoring the electronic properties of SrRuO3 films in SrRuO3/LaAlO3 superlattices

The electronic properties of SrRuO3/LaAlO3 (SRO/LAO) superlattices with different interlayer thicknesses of SRO layers were studied. As the thickness of SRO layers is reduced, the superlattices exhibit a metal-insulator transition implying transformation into a more localized state from its original bulk metallic state. The strain effect on the metal-insulator transition was also examined. The origin of the metal-insulator transition in ultrathin SRO film is discussed. All the superlattices, even those with SRO layers as thin as 2 unit cells, are ferromagnetic at low temperatures. Moreover, we demonstrate field effect devices based on such multilayer superlattice structures.

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preprint2013arXiv

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $\leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 \times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $\geq 20$ unit cells. The $\sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.

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preprint2012arXiv

Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a single-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG), i.e., (LaO)-(TiO2). Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additionally, this study demonstrates an approach to achieve atomically flat film growth based on LAO substrates.

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preprint2012arXiv

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals

We report novel magnetotransport properties of the low temperature Fermi liquid in SrTiO3-x single crystals. The classical limit dominates the magnetotransport properties for a magnetic field perpendicular to the sample surface and consequently a magnetic-field induced resistivity minimum emerges. While for the field applied in plane and normal to the current, the linear magnetoresistance (MR) starting from small fields (< 0.5 T) appears. The large anisotropy in the transverse MRs reveals the strong surface interlayer scattering due to the large gradient of oxygen vacancy concentration from the surface to the interior of SrTiO3-x single crystals. Moreover, the linear MR in our case was likely due to the inhomogeneity of oxygen vacancies and oxygen vacancy clusters, which could provide experimental evidences for the unusual quantum linear MR proposed by Abrikosov [A. A. Abrikosov, Phys. Rev. B 58, 2788 (1998)].

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preprint2012arXiv

Metallic state in La-doped YBa$_2$Cu$_3$O$_y$ thin films with $n$-type charge carriers

We report hole and electron doping in La-doped YBa$_2$Cu$_3$O$_y$(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in oxygen ambient and vaccum. The $n$-type samples show a metallic behavior below the Mott limit and a high carrier density of $\sim2.8$ $\times$ 10$^{21}$ cm$^{-3}$ at room temperature (\emph{T}) at the optimally reduced condition. The in-plane resistivity ($ρ$$_{ab}$) of the $n$-type samples exhibits a quadratic \emph{T} dependence in the moderate-\emph{T} range and shows an anomaly at a relatively higher \emph{T} probably related to pseudogap formation analogous to underdoped Nd$_{2-x}$Ce$_x$CuO$_4$ (NCCO). Furthermore, $ρ$$_{ab}$(T), \emph{T}$_c$ and \emph{T} with minimum resistivity (\emph{T}$_{min}$) were investigated in both $p$- and $n$-side. The present results reveal the $n$-$p$ asymmetry (symmetry) within the metallic-state region in an underdoped cuprate and suggest the potential toward ambipolar superconductivity in a single YBCO system.

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preprint2011arXiv

Carrier freeze-out induced metal-insulator transition in oxygen deficient SrTiO3 films

We report the optical, electrical transport, and magnetotransport properties of high quality oxygen deficient SrTiO3 (STO) single crystal film fabricated by pulsed laser deposition and reduced in the vacuum chamber. The oxygen vacancy distribution in the thin film is expected to be uniform. By comparing the electrical properties with oxygen deficient bulk STO, it was found that the oxygen vacancies in bulk STO is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the oxygen deficient STO film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be re-excited by an electric field, Joule heating, and surprisingly also a large magnetic field.

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preprint2010arXiv

Nonlinear Insulator in Complex Oxides

The insulating state is one of the most basic electronic phases in condensed matter. This state is characterised by an energy gap for electronic excitations that makes an insulator electrically inert at low energy. However, for complex oxides, the very concept of an insulator must be re-examined. Complex oxides behave differently from conventional insulators such as SiO2, on which the entire semiconductor industry is based, because of the presence of multiple defect levels within their band gap. As the semiconductor industry is moving to such oxides for high-dielectric (high-k) materials, we need to truly understand the insulating properties of these oxides under various electric field excitations. Here we report a new class of material called nonlinear insulators that exhibits a reversible electric-field-induced metal-insulator transition. We demonstrate this behaviour for an insulating LaAlO3 thin film in a metal/LaAlO3/Nb-SrTiO3 heterostructure. Reproducible transitions were observed between a low-resistance metallic state and a high-resistance non-metallic state when applying suitable voltages. Our experimental results exclude the possibility that diffusion of the metal electrodes or oxygen vacancies into the LaAlO3 layer is occurring. Instead, the phenomenon is attributed to the formation of a quasi-conduction band (QCB) in the defect states of LaAlO3 that forms a continuum state with the conduction band of the Nb-SrTiO3. Once this continuum (metallic) state is formed, the state remains stable even when the voltage bias is turned off. An opposing voltage is required to deplete the charges from the defect states. Our ability to manipulate and control these defect states and, thus, the nonlinear insulating properties of complex oxides will open up a new path to develop novel devices.

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