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W. Jantsch

W. Jantsch contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Valence state and lattice incorporation of Ni in Zn/Co-based magnetic oxides

Ni incorporation has been studied in a comprehensive range of Zn/Co-based magnetic oxides to elucidate it valence state and lattice incorporation. The resulting structural and magnetic properties are studied in detail. To the one end Ni in incorporated by in-diffusion as well as reactive magnetron co-sputtering in wurtzite ZnO where only the Ni-diffused ZnO exhibits significant conductivity. This is complemented by Ni and Co codoping of ZnO leading. To the other end, the ZnCo$_2$O$_4$ spinel is co-doped with varying amounts of Ni. In the wurtzite oxides Ni is exclusively found on tetrahedral lattice sites in its formal 2+ oxidation state as deep donor. It behaves as an anisotropic paramagnet and a limited solubility of Ni about 10\% is found. Due to its smaller magnetic moment it can induce partial uncompensation of the Co magnetic moments due to antiferromagnetic coupling. In the spinel Ni is found to be incorporated in its formal 3+ oxidation state on octahedral sites and couples antiferromagnetically to the Co moments leading again to magnetic uncompensation of the otherwise antiferromagnetic ZnCo$_2$O$_4$ spinel and to ferrimagnetism at higher Ni concentrations. Increasing Ni even further leads to phase separation of cubic NiO resulting in an exchange-biased composite magnetic oxide.

preprint2015arXiv

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system.

preprint2012arXiv

Indirect Exchange Interaction in Fully Metal-Semiconductor Separated SWCNTs Revealed by ESR

The ESR response from highly metal-semiconductor(M-SC) separated SWCNTs for temperatures T between 0.39 and 200 K is characteristically different for the two systems. The signal originates from defect spins but interaction with free electrons leads to a larger line width for M tubes. The latter decreases with increasing T whereas it increases with T for SC tubes. The spins undergo a ferromagnetic phase transition below around 10 K. Indirect exchange is suggested to be responsible for the spin-spin interaction, supported by RKKY interaction in the case of M tubes. For SC tubes spin-lattice relaxation via an Orbach process is suggested to determine the line width.

preprint2011arXiv

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.

preprint2010arXiv

Spin Dependent Joule Heating due to Rashba Coupling and Zitterbewegung

Investigating microwave absorption in asymmetric Si quantum wells in an external magnetic field, we discover a spin dependent component of Joule heating at spin resonance. We explain this effect in terms of Rashba spin-orbit coupling which results in a current induced spin precession and Zitterbewegung. Evidence is based on the observation of a specific dependence of the electron spin resonance line shape and its amplitude on the experimental geometry which in some range suggests a &#34;negative&#34; differential power absorption.

preprint2006arXiv

Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures

We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data.