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Researcher profile

Z. Wilamowski

Z. Wilamowski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-con

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Trust 21 - EmergingVerification L1Unclaimed author
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Published work

7 published item(s)

preprint2012arXiv

Indirect Exchange Interaction in Fully Metal-Semiconductor Separated SWCNTs Revealed by ESR

The ESR response from highly metal-semiconductor(M-SC) separated SWCNTs for temperatures T between 0.39 and 200 K is characteristically different for the two systems. The signal originates from defect spins but interaction with free electrons leads to a larger line width for M tubes. The latter decreases with increasing T whereas it increases with T for SC tubes. The spins undergo a ferromagnetic phase transition below around 10 K. Indirect exchange is suggested to be responsible for the spin-spin interaction, supported by RKKY interaction in the case of M tubes. For SC tubes spin-lattice relaxation via an Orbach process is suggested to determine the line width.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spintronics in semiconductors

For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in which electron spin as an additional degree of freedom is exploited. Afterwards, we discuss the properties of classic, non-magnetic semiconductors, where the efforts are put on enriching the traditional semiconductor technology engaging the electrical effects of spin effects. Various phenomena and scientific state of the art is highlighted.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The RKKY coupling in diluted magnetic semiconductors

This paper is an attempt to modify the classic Ruderman-Kittel-Kasuya-Yosida (RKKY) model to allow the analysis of the magnetic resonance measurements. In our calculations, we follow the treatment of the original authors of the RKKY model but include the finite band splitting, Δ, as a phenomenological parameter. The RKKY exchange is not anymore of Heisenberg type and an anisotropy induced by the direction of carrier magnetization occurs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Properties of metal-insulator transition and electron spin relaxation in GaN:Si

We investigate properties of doping-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the doping concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states at 2.7 meV below the bottom of the GaN conduction band. Strong damping of the magnetic moment occurs due to filling of the D- states at Si concentrations approaching the metal-insulator transition. Simultaneously, shortening of electron spin relaxation time due to limited electron lifetime in the single-occupied D0 band is observed. The metal-insulator transition occurs at the critical concentration of uncompensated donors equal to about 1.6 * 10^18 cm^-3. Electronic states in metallic samples beyond the metal-insulator transition demonstrate non-magnetic character of double-occupied states.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Rashba field in GaN

We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface.

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preprint2010arXiv

Spin Dependent Joule Heating due to Rashba Coupling and Zitterbewegung

Investigating microwave absorption in asymmetric Si quantum wells in an external magnetic field, we discover a spin dependent component of Joule heating at spin resonance. We explain this effect in terms of Rashba spin-orbit coupling which results in a current induced spin precession and Zitterbewegung. Evidence is based on the observation of a specific dependence of the electron spin resonance line shape and its amplitude on the experimental geometry which in some range suggests a &#34;negative&#34; differential power absorption.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

New type of antiferromagnetic polaron and bipolaron in HTc - superconductors

The possibility of formation of a new type of polaron based on the quantum aniferromagnet (AF) model is reported. We take into account exchange interactions between localized d-d spins of the AF, as well as the p-d interaction of the AF with p-carriers. The energy minimum is found when maximum charge density occurs on every second spin. The formation of such ``comb&#39;&#39;-like polarons results from the damping of quantum fluctuations and the appearance of Van Vleck-like staggered magnetization. Such polarons tend to form pairs coupled by an AF ``glue&#39;&#39;.

0 citations0 reviewsNo code linkedOpen access