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Researcher profile

W. G. van der Wiel

W. G. van der Wiel contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2015arXiv

Conductance spectroscopy of a proximity induced superconducting topological insulator

We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN' (S is a superconductor, N a superconducting proximized material and N' is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Geometric reduction of dynamical nonlocality in nanoscale quantum circuits

Nonlocality is a key feature discriminating quantum and classical physics. Quantum-interference phenomena, such as Young's double slit experiment, are one of the clearest manifestations of nonlocality, recently addressed as $dynamical$ to specify its origin in the quantum equations of motion. It is well known that loss of dynamical nonlocality can occur due to (partial) collapse of the wavefunction due to a measurement, such as which-path detection. However, alternative mechanisms affecting dynamical nonlocality have hardly been considered, although of crucial importance in many schemes for quantum information processing. Here, we present a fundamentally different pathway of losing dynamical nonlocality, demonstrating that the detailed geometry of the detection scheme is crucial to preserve nonlocality. By means of a solid-state quantum-interference experiment we quantify this effect in a diffusive system. We show that interference is not only affected by decoherence, but also by a loss of dynamical nonlocality based on a local reduction of the number of quantum conduction channels of the interferometer. With our measurements and theoretical model we demonstrate that this mechanism is an intrinsic property of quantum dynamics. Understanding the geometrical constraints protecting nonlocality is crucial when designing quantum networks for quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Josephson supercurrent in a topological insulator without a bulk shunt

A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40 nm and lengths in the order of 50 to 80 nm on several Bi1.5Sb0.5Te1.7Se1.3 flakes and measured down to 30 mK. The Fraunhofer patterns unequivocally reveal that the supercurrent is a Josephson supercurrent. The measured critical currents are reproducibly observed on different devices and upon multiple cooldowns, and the critical current dependence on temperature as well as magnetic field can be well explained by diffusive transport models and geometric effects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Modulation of conductance and superconductivity by top-gating in LaAlO3/SrTiO3 2-dimensional electron systems

We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super)-conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO3/SrTiO3 interfaces when no gate voltage is applied.

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preprint2013arXiv

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin injection and perpendicular spin transport in graphite nanostructures

Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation length is not necessarily large when transport is via weakly interacting molecular orbitals. Here we use graphite as a model system and study spin transport in the direction perpendicular to the weakly bonded graphene sheets. We achieve injection of highly (75%) spin-polarized electrons into graphite nanostructures of 300-500 nm across and up to 17 nm thick, and observe transport without any measurable loss of spin information. Direct visualization of local spin transport in graphite-based spin-valve sandwiches also shows spatially uniform and near-unity transmission for electrons at 1.8 eV above the Fermi level.

0 citations0 reviewsNo code linkedOpen access