Researcher profile

W. Brütting

W. Brütting contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Probing the local structural order of C60 thin films by their exciton transport characteristics

We investigate effects of the local structure on the excitonic transport in C60 thin films by means of temperature-dependent photoluminescence quenching studies in a range of 5 to 300 K. Exciton motion in the X-ray amorphous layers indicates thermally activated transport initiated above 80 K accompanied by a thermalization of excitations into low lying states within the excitonic density of states. Discontinuities in the temperature-dependent photoluminescence behavior can be attributed to a continuous phase transition at 80 K and a first order phase transition at 180 K, thereby revealing structural information on the local film morphology in the C60 films.

preprint2012arXiv

Investigation of exciton transport in crystalline thin-films of the organic semiconductor di-indeno-perylene using photoluminescence analyses

The exciton transport in the prototypical organic semiconductor Di-Indeno-Perylene (DIP) has been investigated by means of photoluminescence (PL) quenching and interpreted by an advanced exciton diffusion model including interference effects, quencher penetration as well as non-perfect exciton quenching. X-ray difraction revealed a correlation between the exciton diffusion length of about 90 nm and the structural coherence length of the DIP layers. Temperature dependent studies in a range of 5 - 300 K indicated an incoherent exciton transport above 80 K at activation energies of 10 - 20 meV related to the thickness dependent gradient of exciton density. Below 80 K a coherent exciton transport can be observed by the reduced phonon-interaction at cryogenic temperatures. This manuscript is a pre-final version.